[D-2-1] Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs

Y. Kamakura^1,2、K. Kukita¹、I.N. Adisusilo¹、S. Koba³、H. Tsuchiya^2,3 (1.Osaka Univ.、2.JST-CREST、3.Kobe Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-2] Bulk FinFET Fin Height Control using Gas Cluster Ion Beam (GCIB)-Location Specific Processing (LSP)

M.S. Kim¹、R. Ritzenthaler¹、J. Everaert¹、L. Fernandez²、K. Devriendt¹、J.W. Lee¹、A. Redolfi¹、S. Mertens¹、E. Burke²、N. Horiguchi¹、A. Thean¹ (1.IMEC、2.Tokyo Electron (Belgium))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-3] New Observations on the Corner Effect and STI-Induced Effect in Trigate CMOS Devices

E.R. Hsieh¹、H.M. Tsai¹、S.S. Chung¹、C.H. Tsai²、R.M. Huang²、C.T. Tsai² (1.National Chiao Tung Univ.、2.UMC (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-4] Leakage-Delay Analysis of In_xGa_1-xAs-OI FinFETs for Logic Applications

V.P.H. Hu¹、H.H. Shen¹、M.L. Fan¹、P. Su¹、C.T. Chuang¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-5] Comparison of Analog FOM for TFET and FinFET Considering Work Function Variation

K.C. Lee¹、M.L. Fan¹、P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

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[D-3-1] Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density

D.H. Zadeh¹、H. Oomine¹、K. Kakushima²、Y. Kataoka²、A. Nishiyama²、N. Sugii²、H. Wakabayashi²、K. Tsutsui¹、K. Natori¹、H. Iwai¹ (1.Frontier Research Center, Tokyo Inst. of Tech.、2.Interdisciplinary Graduate School of Science and Engineering, Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-2] Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling

S. Koba¹、M. Ohmori¹、Y. Maegawa¹、H. Tsuchiya^1,2、Y. Kamakura^2,3、N. Mori^2,3、M. Ogawa¹ (1.Kobe Univ.、2.JST-CREST、3.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-3] Multi-electron Wave Packet Transport Dynamics in Nanoscale Channel

T. Shiokawa¹、G. Fujita¹、Y. Takada²、S. Konabe^1,5、M. Muraguchi^3,5、T. Yamamoto²、T. Endoh^3,5、Y. Hatsugai^1,3、K. Shiraishi^1,4 (1.Univ. of Tsukuba、2.Tokyo Univ. of Sci.、3.Tohoku Univ.、4.Nagoya Univ.、5.CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-3-4] Effect of Alloy Scattering on Hole Mobility of sSi/sSiGe/sSOI Quantum Well pMOSFETs

W. Wu¹、W. Yu²、Q. Zhao³、J. Sun¹、D. Zhai¹、Y. Shi¹、Y. Zhao^1,4 (1.Nanjing Univ.、2.State Key Lab. of Functional Materials and Informatics、3.Peter Grünberg Inst. 9、4.State Key Lab. of Silicon Materials (China))

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[D-4-1] Extraction of Time Constants Ratio over Nine Orders of Magnitude for Understanding Random Telegraph Noise in MOSFETs

T. Obara¹、A. Yonezawa¹、A. Teramoto¹、R. Kuroda¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード