[PS-14-10] Suppressing Al Memory-Effect on CVD growth of 4H-SiC Epilayers by adding Hydrogen Chloride Gas

S. Ji¹、K. Kojima¹、Y. Ishida¹、S. Saito¹、S. Yoshida¹、H. Tsuchida²、H. Okumura¹ (1.AIST、2.Central Res. Inst. of Electric Power Industry (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-11] As and Al Activation in SiC Wafer by Atmospheric Thermal Plasma Jet Annealing

H. Hanafusa¹、R. Ashihara¹、K. Maruyama¹、S. Koyanagi¹、S. Hayashi¹、H. Murakami¹、S. Higashi¹ (1.Hiroshima Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-12] The XPS Study on Depth Profile of N Atom in Oxynitride Film Formed on 4H-SiC by Radical Nitridation

H. Okada¹、A. Takashima²、T. Muro²、H. Nohira¹ (1.Tokyo City Univ.、2.Japan Synchrotron Radiation Res. Inst. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-13] Evaluating the cryogenic performance of SiC PiN diodes.

P.M. Gammon¹、C.A. Fisher¹、V.A. Shah¹、M.R. Jennings¹、A. Pérez-Tomás²、S.E. Burrows¹、M. Myronov¹、D.R. Leadley¹、P.A. Mawby¹ (1.Univ. of Warwick、2.IMB-CNM-CSIC (UK))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-14L] 4H-SiC Screw Dislocations and Their Electronic Structures

T. Yamasaki^1,5、H. Koyama^1,5、J. Nara^1,5、J. Koga²、T. Uda^2,5、A. Kuroda³、K. Minami³、T. Ohno^1,4,5 (1.National Institute for Materials Science、2.ASMS, Co. Ltd.、3.RIKEN AICS、4.IIS, Univ. of Tokyo、5.MARCEED (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-15L] Heavy Ribbon Wire Bonding for Advanced Power Module Packages

S.M. Park¹、S. Nagao¹、T. Sugahara¹、K. Suganuma¹ (1.Inst. Sci. Indus. Res., Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-16L] Cell Pitch Design Limitation for Electrical and Thermal Characteristics in Super Junction MOSFET

J.M. Geum¹、S.S. Kyoung¹、E.S. Jung²、Y.T. Kim³、M.Y. Sung¹ (1.Korea Univ.、2.Maple Semiconductor Inc.、3.Semiconductor Materials & Devices Lab., Korea Inst. of Sci. & Tech.(KIST) (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-1] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating

T. Sameshima¹、T. Nakamura¹、S. Yoshidomi¹、M. Hasumi¹、T. Ishii¹、Y. Inouchi²、M. Naito²、T. Mizuno³ (1.Tokyo Univ. of Agr. And Tech.、2.Nissin Ion Equipment Co., Ltd.、3.Kanagawa Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-2] Influence of Post-Deposition Annealing on the Passivation Quality of Room Temperature Atomic Layer Deposited Aluminum Oxide

H. Lee^1,4、T. Nagata³、N. Ikeno¹、K. Arafune^2,4、H. Yoshida^2,4、S. Satoh^2,4、T. Chikyow³、A. Ogura^1,4 (1.Meiji Univ.、2.Univ. of Hyogo、3.National Inst. of Materials Sci.、4.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-3] Worldwide Performance Estimation of Silicon-based Photovoltaic Modules Using Meteorological Data

A. Kamei¹、S. Yoshida¹、N. Kataoka¹、S. Ueno¹、T. Minemoto¹ (1.Ritsumeikan Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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