[K-6-3] Application of Silver Nanowire for Transparent Electrode of OLED Device

A. Tadamasa¹, T. Matsui¹, A. Tsujimoto¹ (1.Panasonic Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-6-4] Improved Light-Emitting Properties of Bilayer Polymer Light-Emitting Transistors with Phosphorescent Dye Doped in Fluorene-Type Polymers

H. Kajii¹, H. Tanaka¹, I. Ikezoe¹, M. Hara¹, T. Ohtomo¹, Y. Ohmori¹ (1.Osaka Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-7-1] Exciplex Forming Co-Hosts as a Platform for OLEDs with Ultimate Efficiency

J.-J. Kim¹ (1.Seoul National Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-7-2] Evaluation of Layer-by-layer Thin Film of PDADMAC:Alcian Blue and PSS Using Surface Plasmon Resonance and Optical Waveguide Spectroscopies

M. Ishigooka¹, T. Ito¹, K. Shinbo¹, Y. Ohdaira¹, A. Baba¹, K. Kato¹, F. Kaneko¹ (1.Niigata Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-7-3] Establishing pn Junction of Doped Organic Semiconductors by Wet Process

K. Fujita¹, N. Mizutani¹, T. Hayashida¹ (1.Kyushu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-7-4] Hybridization of HOMO and Next HOMO in Organic Semiconductor Crystals Revealed by Band Calculations

H. Matsui¹, T. Okamoto^1,2, C. Mitsui¹, M. Yamagishi^1,3, H. Sato⁴, A. Yamano⁴, J. Takeya¹ (1.Univ. of Tokyo, 2.PRESTO, JST, 3.Toyama National College of Technology, 4.Rigaku Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-8-1] Pentacene Thin-Film Transistors with Controlled Threshold Voltages and Their Application to Pseudo CMOS Inverters

Y. Kimura¹, M. Kitamura^1,2, Y. Arakawa² (1.Kobe Univ., 2.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-8-2] Single-Crystal Structure and Transport Analyses of Rubrene under High Pressure

J. Tsurumi¹, K. Sakai¹, H. Matsui¹, Y. Okada¹, T. Okamoto¹, H. Sato², A. Yamano², K. Sugimoto³, A. Fujiwara³, J. Takeya¹ (1.Univ. of Tokyo, 2.Rigaku Corp., 3.JASRI (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-8-3] Estimating the Density of Trap States in the Middle of the Bandgap using Ambipolar Organic Field-Effect Transistors

R. Haeusermann¹, S. Chauvin¹, A. Facchetti², Z. Chen², B. Batlogg¹ (1.ETH Zurich, 2.Polyera Corp. (Switzerland))

2014 International Conference on Solid State Devices and Materials |PDF Download

[K-8-4] Effects of Deposition Pressure on the Characteristics of Organic Thin-Film Transistors Fabricated with Film Profile Engineering

M.H. Wu¹, H.C. Lin^1,2, T.Y. Huang¹ (1.NCTU, 2.National Nano Device Lab. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

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