GaN Metal-insulator-semiconductor Heterojunction Field-effect Transistors

S.P. Le¹, T.Q. Nguyen¹, H. Shih¹, M. Kudo¹, T. Suzuki¹ (1.JAIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-1-6L] Record-Low Contact Resistance for InAlN/AlN/GaN HEMTs on Si with Non-Gold Metal

S. Arulkumaran¹, G.I.. Ng^1,2, K. Ranjan¹, C.M. Manoj Kumar¹, S.C. Foo¹, K.S. Ang¹, S. Vicknesh¹ (1.Temasek Laboratories@NTU, Nanyang Technological Univ., 2.School of EEE, Nanyang Technological Univ. (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Room-Temperature Resonant-Tunneling-Diode Terahertz Oscillator

S. Suzuki¹, M. Asada¹ (1.Tokyo Tech (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba¹, M. Sato¹, H. Matsumura¹, Y. Kawano¹, T. Suzuki¹, Y. Nakasha¹, T. Takahashi¹, K. Makiyama¹, T. Iwai², N. Hara¹ (1.Fujitsu Ltd., 2.Fujitsu Laboratories Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Experimental Demonstration of Resonant Tunneling Super Regenerative Detectors Detecting High Order Harmonic Signals

J. Pan¹, Y. Kakutani¹, T. Nakayama¹, M. Mori¹, K. Maezawa¹ (1.Univ.of Toyama (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] Non-destructive Mapping of Doping and Structural Composition of High Current Density Resonant Tunnelling Diodes Grown by Metal-Organic Vapour Phase Epitaxy Through Photoluminescence Spectroscopy

K.J.P. Jacobs¹, B.J. Stevens², T. Mukai³, D. Ohnishi³, R.A. Hogg¹ (1.Univ. of Sheffield, 2.EPSRC National Centre for III-V Technologies, 3.Rohm Co. Ltd. (UK))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-2-5L] Impact of In_1-xGa_xAs Capping Layer on Characteristic of III-V Trigate MOSFET Devices

C.-H. Huang^1,2, Y. Li^1,2,3 (1.Parallel and Scientific Computing Lab., National Chiao Tung Univ., 2.Institute of Communications Engineering, National Chiao Tung Univ., 3.Dept. of Electrical and Computer Engineering, National Chiao Tung Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-3-1] Commercialization of 600V GaN HEMTs

P. Parikh¹, Y. Wu¹, U. Mishra¹, L. Shen¹, R. Birkhahn¹, B. Swenson¹, J. Gritters¹, R. Barr¹, L. McCarthy¹, J. Honea¹, S. Yea¹, K. Smith¹, P. Smith¹, D. Dunn¹, J. McKay¹, H. Clement¹, T. Kikkawa², T. Hosoda², Y. Asai², K. Imanashi², K. Shono² (1.Transphorm Inc., 2.Transphorm Japan Inc. (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-3-2] A Novel High-Current Density GaN-based Normally-Off Transistor with Tensile Strained Quaternary InAlGaN Barrier

R. Kajitani¹, K. Tanaka¹, M. Ogawa¹, H. Ishida¹, M. Ishida¹, T. Ueda¹ (1.Panasonic Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[E-3-3] 5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures

H. Huang¹, Y.H. Wang¹, Y.C. Liang¹, G.S. Samudra¹, C.F. Huang², W.H. Kuo³ (1.National Univ. of Singapore, 2.National Tsing Hua Univ., 3.Indus. Tech. Res. Inst. (Singapore))

2014 International Conference on Solid State Devices and Materials |PDF Download

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