[PS-6-5] High-frequency Performance In_0.49Ga_0.51P/In_0.4Ga_0.6As MOSFET

J.H. Zhou^1,2, H.D. Chang², G.M. Liu², H.O. Li¹, H.G. Liu² (1.Guangxi Experiment Center of Info. Sci. , Guilin Univ. of Electronic Tech., 2.Microwave Device and IC Department, Inst. of Microelectronics of Chinese Academy of Sciences (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-6] Reduction of Initial Threshold Voltage Shift in ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs on Si Substrates by Post-deposition Annealing

T. Kubo¹, J. Freedsman¹, Y. Yoshida¹, T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-7] Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang¹, T.C. Hsiao¹, C.F. Huang¹, C.W. Chiu², T.Y. Yang², T.Y. Huang², Y.C. Liang³, G. Samudra³ (1.Nat'l Tsing Hua Univ., 2.Richtek Tech. Corp., 3.Nat'l Univ. of Singapore (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-8] Study of HfO₂/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan¹, P.C. Chin¹, Y.C. Lin², J.S. Maa³, E.Y. Chang^2,4 (1.1Inst. of Photonic System, NCTU, 2.2Inst. of Materials Sci. and Eng.,NCTU, 3.Inst. of Lighting and Energy Photonics NCTU, 4.Inst. of Electronics Engineering, NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-9] Electrical Characteristic Simulation of Novel AlGaN/GaN Vertical HEMT with Multi-Aperture and SiO₂ Current Blocking Layer

N.M. Shrestha¹, Y.Y. Wang¹, Y. Li¹, E.Y. Chang¹ (1.NCTU (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-10] Reduction in Mobility Difference between C-Axis-Aligned Crystalline IGZO-FET and Si-FET by Miniaturization

S. Matsuda¹, Y. Yamane¹, Y. Okazaki¹, T. Ishizu¹, Y. Kobayashi¹, H. Suzawa¹, A. Isobe¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-11] Fabrication and Characteristics of Fully–Transparent Al–Sn–Zn–O TFTs Fabricated on Glass at Low Temperature

Y.Y. Cong¹, D.D. Han¹, J. Wu^1,2, N.N. Zhao^1,2, Z.F. Chen^1,2, F.L. Zhao^1,2, J.C. Dong^1,2, S.D. Zhang², X. Zhang¹, Y. Wang¹ (1.Inst. of Microelectronics, Peking Univ., 2.Shenzhen Graduate School, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-12] Characteristics of Submicron Indium-Tin-Oxide Thin-Film Transistors Fabricated by Film Profile Engineering

Y.A. Huang¹, H.C. Lin^1,2, T.Y. Huang¹ (1.NCTU, 2.National Nano Device Labs. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-13] Fabrication of High Performance Ultra-thin body SnO₂ Thin-Film-Transistors (TFTs) using Microwave Annealing

S.W. Moon¹, H.J. Jang¹, W.J. Cho¹ (1.Department of Electronic Materials Eng, Kwangwoon Univ. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-14] Fully Transparent Dual-active-layer ITO/TZO TFT Fabricated on Glass Substrate at low-temperature

Z.F. Chen^1,2, D.D. Han², N.N. Zhao^1,2, J. Wu^1,2, Y.Y. Cong², J.C. Dong^1,2, F.L. Zhao^1,2, S.D. Zhang^1,2, X. Zhang^1,2, Y. Wang², L.F. Liu² (1.Shenzhen Gradnate School, Peking Univ., 2.Inst. of Microelectronics, Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF Download

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