[A-7-1] A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instruction Achieving Ultra-low Power Operation

H. Koike¹, T. Ohsawa¹, S. Miura¹, H. Honjo¹, K. Kinoshita², S. Ikeda¹, T. Hanyu¹, H. Ohno¹, T. Endoh¹ (1.Tohoku Univ., 2.NEC Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Nonvolatile FPGA Using 2T-1MTJ-Cell-Based Multi-Context Array for Power and Area Efficient Dynamically Reconfigurable Logic

D. Suzuki¹, T. Hanyu¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] CAAC-OS-based Nonvolatile Programmable Analog Device: Voltage Controlled Oscillator Realizing Instant Frequency Switching

Y. Okamoto¹, T. Nakagawa¹, T. Aoki¹, M. Kozuma¹, Y. Kurokawa¹, T. Ikeda¹, N. Yamade¹, Y. Okazaki¹, H. Miyairi¹, M. Fujita², S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.VLSI Design and Education Center, Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Switching current and thermal stability of Perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm

H. Sato^1,2, T. Yamamoto^1,3, E.C.I. Enobio^1,4, M. Yamanouchi^1,4, S. Ikeda^1,2,4, S. Fukami^1,2, K. Kinoshita¹, F. Matsukura^5,1,4, N. Kasai¹, H. Ohno^1,2,4,5 (1.CSIS, Tohoku. Univ., 2.CIIES, Tohoku Univ., 3.ULVAC, Inc., 4.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] Impact of Sub-Volume Excitation for Improving Overdrive Delay Product in Sub-40nm p-MTJ and Its Beyond

S. Ohuchida¹, K. Ito², T. Endoh^1,2 (1.Graduate School of Engineering, Tohoku Univ., 2.Center for Innovative Integrated Electronic Systems, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit

T. Ohsawa¹, S. Miura², H. Honjo², S. Ikeda¹, T. Hanyu¹, H. Ohno¹, T. Endoh¹ (1.Tohoku Univ., 2.NEC Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Trends on Advanced Semiconductor Memories

A. Nitayama¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory

T. Tomita¹, K. Miyaji¹ (1.Shinshu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] Comparative Study of Floating Gate Type 3D Fin-Channel Flash Memories with Different Channel Shapes and Interpoly Dielectric Layers

Y.X. Liu¹, T. Nabatame², N. Nguyen², T. Matsukawa¹, K. Endo¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, W. Mizubayashi¹, Y. Morita¹, S. Migita¹, H. Ota¹, T. Chikyow², M. Masahara¹ (1.AIST, 2.NIMS (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Germanium Tin Light Emitters on Silicon

E. Kasper¹, M. Oehme¹ (1.Univ. of Stuttgart (Germany))

2014 International Conference on Solid State Devices and Materials |PDF Download