[A-3-2] Mechanism of OFF-State Lifetime Improvement in Complementary Atom Switch

N. Banno¹, M. Tada¹, T. Sakamoto¹, M. Miyamura¹, K. Okamoto¹, N. Iguchi¹, T. Nohisa¹, H. Hada¹ (1.LEAP (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics

T. Onuki¹, K. Kato¹, M. Nomura¹, Y. Yakubo¹, S. Nagatsuka¹, T. Matsuzaki¹, S. Hondo¹, Y. Hata¹, Y. Okazaki¹, M. Nagai¹, T. Atsumi¹, M. Sakakura¹, T. Okuda¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] 2T1C Gain Cell Memory with Improved Retention Characteristic By Dual Coupling Method for SOC application Using 45nm-logic compatible CMOS Process

C.J. Lee¹, Y.K. Lee¹, M.K. Park¹, S.W. Kim¹, D.H. Lee¹ (1.Samsung Electronics Corp. (Korea))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] 10⁸ Endurance Nonvolatile Memory Transistor with 100 nm Metal Gate

L.V. Hai¹, M. Takahashi¹, W. Zhang¹, S. Sakai¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Effect of Oxygen Partial Pressure Under Heat Treatment on Ferroelectricity of (Hf_0.5Zr_0.5)O₂ Thin Films

H. Funakubo^1,2, T. Shimizu², T. Yokouchi¹, T. Oikawa¹, T. Shiraishi¹, T. Kiguchi³, A. Akama³, T.J. Konno³, H. Uchida⁴, D. Kim⁵, A. Gruverman⁵ (1.Department of Innovative and Engineered Material, Tokyo Tech, 2.Materials Reserch Center for Element Strategy, Tokyo Tech, 3.Institute for Materials Research, Tohoku Univ., 4.Department of Materials and Life Sciences, Sophia Univ., 5.Department of Physics and Astronomy, Univ. of Nebraska, Lincoln (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] A 4F²-cross-point Phase Change Memory Using Nano-crystalline Doped GeSbTe Material

T. Morikawa¹, K. Akita¹, M. Kinoshita¹, M. Tai¹, T. Ohyanagi¹, N. Takaura¹ (1.LEAP (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Progress of STT-MRAM Technology and its application to low-power memory systems A key Technology and Prospect of Normally-off memory systems

H. Yoda¹, N. Shimomura², J. Ito², S. Fujita², K. Ando³ (1.Center For Semiconductor Research & Development, Toshiba Corp., 2.Corporate R&D Center, Toshiba Corp., 3.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Perpendicular Magnetic Tunnel Junctions with L10-MnGa/FeCo Bilayer Electrodes with Tunable Interfacial Exchange Coupling

Q.L. Ma¹, S. Mizukami¹, X.M. Zhang¹, Y. Ando¹, T. Miyazaki¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via

S. Miura¹, H. Honjo¹, K. Kinoshita¹, K. Tokutome¹, H. Koike², S. Ikeda², T. Endoh², H. Ohno² (1.NEC Corp., 2.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Study about the Process Damage Mechanism of the Patterned Interface Perpendicular Magnetic Tunnel Juncotions (MTJs) by Hydrogen Ion Treatments

J.H. Jeong^1,3, T. Endoh^1,2 (1.Tohoku Univ., 2.Center for Innovative Integrated Electronic Systems (CIES), 3.SAMSUNG Electronics Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download