[G-1-1] Technology and Application Requirements of 2.5D/3D Field Programmable System-in-Package (SiP)

A. Rahman¹ (1.Altera Corp. (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] Improvement of Motional Resistance through Concave TSV Design and Modification for Static Capacitance of TSV-Based Resonator

J.Y. Shih¹, Y.C. Chen², C.H. Chiu², C.L. Lo², K.N. Chen¹ (1.NCTU, 2.TXC Corp. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] Ultrawideband Ultralow PDN Impedance of Decoupling Capacitor Embedded Interposers Using Narrow Gap Chip Parts Mounting Technology for 3-D Integrated LSI System

K. Kikuchi¹, M. Ujiie², M. Aoyagi¹, S. Takayama² (1.AIST, 2.Arena Co., Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] Characterization of Vapor Deposited Polyimides and Process Integration with the Polymeric Liner for Via-Last/Backside-Via Cu-TSV Formation

T. Fukushima¹, M. Mariappan¹, J.C. Bea¹, K.W. Lee¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5L] Improved Leakage Current for TiO₂-Based MIM Capacitors by Embedding Ge Nanocrystals

Y.-H. Chen¹, M.-T. Yu¹, C.-C. Lin¹, Y.-H. Wu¹ (1.Natl. Tsing Hua Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-2-1] Stress Distribution Pattern in Cross-Sectional 3D-LSI Examined by u-XRD

M. Mariappan¹, J.C. Bea¹, T. Fukushima¹, K.W. Lee¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-2-2] Investigation of the Plasma Damage by Etching Process for TSV Formation in Via-last Backside-via 3D IC

Y. Sugawara¹, H. Hashiguchi¹, S. Tanikawa¹, H. Kino², K. Lee³, T. Fukusima³, M. Koyanagi³, T. Tanaka^1,2 (1.Dept. of Bioengineering and Robotics, Tohoku Univ., 2.Dept. of Biomedical Engineering, Tohoku Univ., 3.NICHe, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-2-3] Dominant Factors of Stress-Induced Migration in Electroplated Copper Thin Films Used for Through Silicon Via (TSV) Interconnections

K. Suzuki¹, R. Furuya¹, H. Miura¹ (1.Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-2-4] Suppression of Cu Ion Drift by Metal-Cap on Cu lines, Improving Interconnect Dielectric Reliability

M. Ueki¹, N. Furutake¹, N. Inoue¹, Y. Hayashi¹ (1.Renesas Electronics Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[G-2-5] Analysis of the Breakdown Voltage of an Area Surrounded by the Multi-trench Gaps in a 4kV Monolithic Isolator for a Communication Network Interface

Y. Takeuchi¹, R. Kuroda¹, S. Sugawa¹ (1.Graduate School of Engineering, Tohoku Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

540 results (161 - 170)

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