[F-4-1] Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels

R. Chen¹, B.-M. Nguyen^1,2, W. Tang^2,3, S.A. Dayeh¹ (1.Univ. of California San Diego, 2.Los Alamos National Laboratory, 3.Univ. of California Los Angeles (USA))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-4-2] NiPt Silicide Agglomeration Caused by Stress Relaxation along <010> Direction in NiSi Grain

M. Mizuo¹, T. Yamaguchi², X. Pages³, K. Vanormelingen³, M. Smits³, E. Granneman³, M. Fujisawa², N. Hattori¹ (1.Renesas Semiconductor Manufacturing Co., Ltd., 2.Renesas Electronics Corp., 3.Levitech BV (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-4-3] Reduction of Parasitic Resistance in Ge nMOSFETs with NiGe/n⁺Ge Junctions by Two-step Phosphorus Ion Implantation

M. Koike¹, Y. Kamimuta¹, T. Tezuka¹ (1.AIST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-6-1] Depth Profile of Thermally Grown SiO₂ Film Density

R. Hasunuma¹, M. Hayashi¹, K. Yamabe¹ (1.Univ. of Tsukuba (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-6-2] Reduction of Defect State Density at SiO₂/SiC Interface Formed by the Thermal Oxidation Accompanied with Direct CO Generation

R. Kikuchi¹, Y. Fujino¹, K. Kita^1,2 (1.Univ. of Tokyo, 2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-6-3] Estimation of Real SiC-MOS Characteristics by Using Novel High-Speed Pulse IV

N. Tega¹, D. Hisamoto¹, H. Yoshimoto¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi, Ltd. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-7-1] Fermi-level Unpinning at Sn/Ge Interfaces; First-principles Calculation

K. Kobinata¹, T. Nakayama¹ (1.Chiba Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-7-2] Impact of YScO₃ on Ge Gate Stack in Terms of EOT Reduction as Well as Interface

C. Lu^1,2, C.H. Lee^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-7-3] Origin of Self-limiting Oxidation of Ge in High-Pressure O₂ at Low Temperature

C.H. Lee^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[F-7-4] Very Low EOT in Ge MOS Devices with High Oxidation State Interfacial Layer

C.H. Lin¹, K.S. Chang-Liao¹, C.C. Li¹, L.J. Liu¹, T.M. Lee¹ (1.National Tsing Hua Univ. (Taiwan))

2014 International Conference on Solid State Devices and Materials |PDF Download

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