2017 International Conference on Solid State Devices and Materials

2017年9月19日〜 2017年9月22日
Sendai International Center

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763件中(721 - 730)

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[PS-13-21 (Late News)] First-principles study on domain boundary of MoS₂: Origin of band bending

^○T. Kaneko¹, R. Saito¹ (1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-13-22 (Late News)] Detection of electron trapping/detrapping in MoS₂ FET by high time-resolved I-V measurement

^○K. Taniguchi¹, K. Nagashio^1,2 (1.Univ. of Tokyo (Japan), 2.PRESTO-JST (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-13-23 (Late News)] Graphene and Poly (Methyl Methacrylate) Composite Laminates on Flexible Substrates for Volatile Organic Compounds Detection

^○C. Rattanabut¹, W. Muangrat², W. Bungjongpru³, M. Phonyiem¹, W. J. Wongwiriyapan¹, Y. J. Song⁴ (1.King Mongkut's Inst. Tech. Ladkrabang (Thailand), 2.Shinshu Univ. (Japan), 3.Thai Microelectronics Center (Thailand), 4.Sungkyunkwan Univ. (Korea))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-13-24 (Late News)] Sodium Dodecyl Sulfate-Functionalized Carbon Nanotube / Polydimethylsiloxane Composites for High Performance Triboelectric Nanogenerator

^○N. Ketama¹, W. Wongwiriyapan^1,2, A. Klamchuen², S. Rattanamai¹ (1.King Mongkut's Inst. Tech. Ladkrabang (Thailand), 2.National NanoTech. Center (Thailand))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-13-25 (Late News)] Contact Properties of SWNT TCEs via the Microwave Treatment

K. H. Kim^1,2,^○M. Yun¹, H. -D. Kim¹ (1.Sejong Univ. (Korea), 2.Univ. of Michigan (USA))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-01] Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, N. Mishina¹, N. Ichikawa², M. Kato² (1.Univ. of Fukui (Japan), 2.Nagoya Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation

^○T. Akiyama¹, S. Hori¹, K. Nakamura¹, T. Ito¹, H. Kageshima², M. Uematsu³, K. Shiraishi⁴ (1.Mie Univ. (Japan), 2.Shimane Univ. (Japan), 3.Keio Univ. (Japan), 4.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-03] Compact Modeling of SiC Schottky Barrier Diode (SBD) and Its Extension to Junction Barrier Schottky Diode (JBS)

^○D. Navarro¹, M. Miura-Mattausch¹, H. J. Mattausch¹, M. Takusagawa², J. Kobayashi², M. Hara² (1.Hiroshima Univ. (Japan), 2.Toyota Motor Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-04] Determination of Temperature-Dependent Stress in SiC MOSFETs by Raman Spectroscopy

^○R. Sugie¹, T. Uchida¹ (1.Toray Research Center Inc. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-05] Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO₂ Hole Doping Effect -

^○N. C. Saha¹, M. Kasu¹ (1.Saga Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

763件中(721 - 730)

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