[N-2-04] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diodes

^○S. Hayashi^1,2, T. Yamashita^1,3, J. Senzaki¹, M. Miyazato^1,4, M. Ryo^1,4, M. Miyajima^1,4, Y. Yonezawa¹, T. Kato¹, K. Kojima¹, H. Okumura¹ (1.AIST (Japan), 2.Toray Research Center Inc. (Japan), 3.SHOWA DENKO K.K. (Japan), 4.Fuji Electric Co. Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月20日(水) 16:40 〜 16:55 |PDF ダウンロード

[N-2-05] Fabrication of MSM-Type Photodetector Using Sn-Doped α-Ga₂O₃ Films Grown by Mist Chemical Vapor Deposition

^○K. Rikitake¹, T. Kobayashi¹, T. Yamaguchi¹, T. Onuma¹, T. Honda¹ (1.Kogakuin Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月20日(水) 16:55 〜 17:10 |PDF ダウンロード

[N-2-06 (Late News)] AlN metal-semiconductor field-effect transistors using Si-ion implantation

^○H. Okumura^1,2, S. Suihkonen³, J. Lemettinen³, A. Uedono¹, T. Palacios² (1.Univ. of Tsukuba (Japan), 2.MIT (USA), 3.Aalto Univ. (Finland))

2017 International Conference on Solid State Devices and Materials |2017年9月20日(水) 17:10 〜 17:25 |PDF ダウンロード

[N-3-01 (Invited)] Monolithically Integrated GaN-on-Si Power Circuits

^○R. Reiner¹, P. Waltereit¹, B. Weiss¹, S. Moench², R. Quay¹, O. Ambacher³ (1.Fraunhofer IAF (Germany), 2.Univ. of Stuttgart (Germany), 3.Univ. of Freiburg (Germany))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 09:30 〜 10:00 |PDF ダウンロード

[N-3-02] Unpassivated AlGaN/GaN HEMTs with Ideal Sub-threshold Swing (~60mV/decade) on Extremely High Quality Free-standing GaN Substrate

^○X. Liu¹, H. Gu¹, K. Li¹, J. He¹, K. Lai¹, D. Zhu¹, Y. Lu¹, W. He¹, J. Fang², J. Wang³, H. -C. Kuo⁴, Z. Liu⁵, W. Liu⁶, K. -W. Ang⁵, Y. Hao², K. Xu³, J. -P. Ao^1,2 (1.Shenzhen Univ (China), 2.Xidian Univ. (China), 3.SINANO, CAS (China), 4.National Chiao Tung Univ. (Taiwan), 5.National Univ. of Singapore (Singapore), 6.Fudan Univ. (China))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:00 〜 10:15 |PDF ダウンロード

[N-3-03] Impact of Crystal Orientation on Ohmic Contact Resistance of Enhancement-Mode pGaN Gate High Electron Mobility Transistors on 200 mm Si Substrates

^○M. Van Hove¹ (1.IMEC (Belgium))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:15 〜 10:30 |PDF ダウンロード

[N-3-04] Threshold voltages of Al₂O₃/AlGaN/GaN and AlTiO/AlGaN/GaN metal-insulator-semiconductor devices

^○S. P. Le¹, T. Ui¹, D. D. Nguyen¹, T. Suzuki¹ (1.JAIST (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:30 〜 10:45 |PDF ダウンロード

[N-3-05] Drain-induced barrier lowering in normally-off AlGaN-GaN MOSFETs with single- or double-recess overlapped gate

^○T. Sato¹, K. Uryu¹, J. Okayasu¹, M. Kimishima¹, T. Suzuki² (1.Advantest Labs. Ltd. (Japan), 2.JAIST (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 10:45 〜 11:00 |PDF ダウンロード

[N-4-01 (Invited)] High Frequency GaN HEMTs for RF MMIC Applications

M. Micovic¹,^○D. F. Brown¹, D. Regan¹, J. Wong¹, Y. Tang¹, F. Herrault¹, D. Santos¹, S. D. Burnham¹, J. Tai¹, E. Prophet¹, I. Khalaf¹, C. McGuire¹, H. Bracamontes¹, H. Fung¹, A. Schmitz¹ (1.HRL Labs. (USA))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:00 〜 14:30 |PDF ダウンロード

[N-4-02] High Performance Tri-Gate AlGaN/GaN Power HEMTs

^○J. H. Lee¹, C. C. Hsu¹, Y. C. Lin¹, J. N. Yao¹, C. Y. Wu¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 14:30 〜 14:45 |PDF ダウンロード