[K-1-03] Suppression of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure

^○D. Kato¹, Y. Kajiwara¹, A. Mukai¹, H. Ono¹, A. Shindome¹, J. Tajima¹, T. Hikosaka¹, M. Kuraguchi¹, S. Nunoue¹ (1.Toshiba Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:45 〜 15:00 |PDF ダウンロード

[K-1-04] Vertical PN Junction-based GaN Power Diode

^○J. Wang^1,2, S. Jiang³, H. Zong³, Y. Liao², T. Liu², J. Shen², Y. Ando², Y. Honda², X. Hu³, H. Amano², Y.-H. Xie¹ (1.Univ. of California, Los Angeles (USA), 2.Nagoya Univ. (Japan), 3.Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[K-1-05] High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers

^○T. Maeda¹, T. Narita², H. Ueda², M. Kanechika², T. Uesugi², T. Kachi³, M. Horita^1,3, T. Kimoto¹, J. Suda^1,3 (1.Kyoto Univ. (Japan), 2.Toyota Central R&D Labs., Inc. (Japan), 3.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード

[K-3-01 (Invited)] State-of-the Art IGBT and Development towards Higher Operation Temperature and Power Ratings

^○J. Vobecky¹, C. Corvasce¹, E. Buitrago¹, M. Andenna¹, B. Boksteen¹, G. Paques¹ (1.ABB Semiconductors (Switzerland))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:00 〜 09:30 |PDF ダウンロード

[K-3-02] Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs

^○T. Saraya¹, K. Ito¹, T. Takakura¹, M. Fukui¹, S. Suzuki¹, K. Takeuchi¹, K. Kakushima², T. Hoshii², K. Tsutsui², H. Iwai², S. Nishizawa³, I. Omura⁴, T. Hiramoto¹ (1.Univ. of Tokyo (Japan), 2.Tokyo Tech (Japan), 3.Kyushu Univ. (Japan), 4.Kyushu Inst. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:30 〜 09:45 |PDF ダウンロード

[K-3-03] Impact of 3-D Simulation on the Analysis of Unclamped Inductive Switching

^○M. Tanaka¹, N. Abe¹, A. Nakagawa² (1.Nihon Synopsys G.K. (Japan), 2.Nakagawa Consulting Office, LLC. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:45 〜 10:00 |PDF ダウンロード

[K-3-04] Analysis of Oscillatory Phenomena in Cathode Designs for 1200 V Diodes Using an LCR Circuit Model in Reverse Recovery

^○K. Fuse¹, K. Kawamura¹, T. Matsudai¹, W. Saito¹ (1.Toshiba Electronic Devices & Storage Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:00 〜 10:15 |PDF ダウンロード

[K-3-05] A Novel 120V Level Shifter with Enhanced Isolation Structure by Using 0.35um LV CMOS Process for Motor Driver Applications

^○V. Ningaraju¹, H.C. Lin¹, P.A. Chen², K.L. Lin² (1.National Chiao Tung Univ. (Taiwan), 2.Nuvoton Technology Corporation (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:15 〜 10:30 |PDF ダウンロード

[K-4-01 (Invited)] Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs

^○Y. Minoura^1,2, T. Ohki^1,2, N. Okamoto^1,2, A. Yamada^1,2, K. Makiyama^1,2, J. Kotani^1,2, S. Ozaki^1,2, M. Sato^1,2, N. Nakamura^1,2 (1.Fujitsu Ltd. (Japan), 2.Fujitsu Labs. Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 15:30 〜 16:00 |PDF ダウンロード

[K-4-02] Low Turn-on Voltage and High Breakdown GaN Schottky Barrier Diodes for RF Energy Harvesting Applications

C.-H. Li¹,^○H. Wang¹, Y. Liu¹, S.D. Joseph², Y. Huang², S.S.H. Hsu¹ (1.National Tsing Hua Univ. (Taiwan), 2.Univ. of Liverpool (UK))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 16:00 〜 16:15 |PDF ダウンロード