[N-3-04] Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure

^○K. Kato^1,2, K. Jo², H. Matsui², H. Tabata², T. Mori¹, Y. Morita¹, T. Matsukawa¹, M. Takenaka², S. Takagi² (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:00 〜 10:15 |PDF ダウンロード

[N-3-05] New types of resonant tunneling currents at Si-p/n junctions; Theoretical design

^○S. Cho¹, T. Nakayama¹ (1.Chiba Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:15 〜 10:30 |PDF ダウンロード

[N-4-01 (Invited)] Recent progress in sequential 3D device stacking: Low temperature reliable top tier junction-less devices on 300mm wafers.

^○A. Vandooren¹, J. Franco¹, Z. Wu¹, B. Parvais¹, G. Besnard², W. Schwarzenbach², I. Radu², B.-Y. Nguyen², N. Collaert (1.imec (Belgium), 2.SOITEC (France))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 15:30 〜 16:00 |PDF ダウンロード

[N-4-02] Bottom Tier High Voltage Vevice Thermal Stability in 3D Sequential Integration for More than Moore Applications

^○C. Cavalcante^1,2,3, G. Ghibaudo², X. Garros¹, M. Cassé¹, T. Karatsori², J. Lacord¹, C. Fenouillet¹, N. Rambal¹, O. Rozeau¹, J.P. Colinge¹, M. Vinet¹, D. Lattard¹, F. Andrieu¹, P. Batude¹ (1.Lab. CEA-LETI, MINATEC (France), 2.Inst. IMEP-LAHC, Grenoble INP (France), 3.Univ. Grenoble Alpes (France))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 16:00 〜 16:15 |PDF ダウンロード

[N-4-03] Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process

^○C.-M. Lim¹, Z. Zhao¹, K. Sumita¹, K. Toprasertpong¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 16:15 〜 16:30 |PDF ダウンロード

[N-5-01 (Invited)] FinFET Extension towards N3 and Beyond – Local Fin Trimming

^○T. Miyashita¹, S. Mittal¹, K. Suen¹, M.S. Kim¹, A. Pal¹, A. Sachid¹, M. Cogorno¹ (1.Applied Materials, Inc. (USA))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:00 〜 09:30 |PDF ダウンロード

[N-5-02] Surface Modification of SiO₂ Thin Film using High-Dose Ion Implantation Technique as a Manufacturing Worthy Process

^○R. Wada¹, H. Kai¹, J. Sasaki¹, T. Kuroi¹, T. Ikejiri¹ (1.NISSIN ION EQUIPMENT CO.,LTD. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:30 〜 09:45 |PDF ダウンロード

[N-5-03] Solid phase recrystallization induced by nanosecond pulsed laser

^○P. Acosta Alba¹, J. Aubin², F. Mazzamuto², S. Perrot², S. Kerdiles¹ (1.Univ. Grenoble Alpes (France), 2.Indus. SCREEN-LASSE (France))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:45 〜 10:00 |PDF ダウンロード

[N-5-04] Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10^-9 ohm.cm²) by Optimizing Strain and Doping Concentration

^○C. Porret¹, Y.H. Huang^1,2,3, G. Rengo^1,3, H. Yu¹, M. Schaekers¹, J.-L. Everaert¹, M. Heyns^1,3, A. Vohra^1,3, A. Hikavyy¹, E. Rosseel¹, R. Langer¹, R. Loo¹ (1.imec vzw (Belgium), 2.National Tsing Hua Univ. (Taiwan), 3.K.U. Leuven (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:00 〜 10:15 |PDF ダウンロード

[N-6-01] Accurate evaluation of contact resistivity between InAs/Ni-InAs alloy

^○K. Sumita¹, J. Takeyasu¹, K. Kato¹, K. Toprasertpong¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:30 〜 10:45 |PDF ダウンロード