[K-2-05] Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation

〇Yuta Tan¹, Daiki Tsuruta¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:00 〜 17:15 |PDF ダウンロード

[K-2-06] High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Xiangsheng Gong¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月28日(月) 17:15 〜 17:30 |PDF ダウンロード

[K-4-01 (Invited)] Gate Stack Technology for Advanced GaN-based MOS Devices

〇Heiji Watanabe¹ (1. Osaka University, Graduate School of Engineering(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:00 〜 11:30 |PDF ダウンロード

[K-4-02] impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of N-polar AlGaN/GaN heterostructures

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs, NTT Corporation(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:30 〜 11:45 |PDF ダウンロード

[K-4-03] Structural and Luminescence Characteristics of Trench Defects in Red-emitting InGaN/GaN on Single-crystal GaN Substrate

〇Takashi Tange¹, Taeko Matsukata¹, Takumi Sannomiya¹ (1. Tokyo Tech(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 11:45 〜 12:00 |PDF ダウンロード

[K-5-01] Classification of in-situ RHEED Images Using Principal Component Analysis

〇Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1. NanoQuine, Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:00 〜 14:15 |PDF ダウンロード

[K-5-02] Impact of the Precursor Conditions on the Solid-phase Crystallization of Amorphous GaAs Thin Films on Glass and Plastic Substrates

〇Masaya Saito¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:15 〜 14:30 |PDF ダウンロード

[K-5-03] Highly efficient electron-photon spin conversion using InGaAs quantum dots with p-doped capping barrier

〇Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:30 〜 14:45 |PDF ダウンロード

[K-5-04] Spin relaxation property after spin transfer from a semiconductor superlattice barrier to quantum dots

〇Saeko Hatakeyama¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 14:45 〜 15:00 |PDF ダウンロード

[K-5-05 (Late News)] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode

〇Iori Morita¹, Fumitaro Ishikawa¹, Anna Honda², Daiki Sato², Atsushi Koizumi², Tomohiro Nishitani^2,3, Masao Tabuchi⁴ (1. Univ. of Ehime.(Japan), 2. Photo electron Soul Inc.(Japan), 3. IMaSS of Nagoya Univ.(Japan), 4. SRC of Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |2020年9月29日(火) 15:00 〜 15:15 |PDF ダウンロード