[A-6-07] One to two-trap percolation transition of SILC in SiO2/HfO2

〇Andrea - Vici^1,2、Robin Degraeve²、João Pedro Bastos²、Ingrid De Wolf^2,1 (1.KU Leuven、2.imec)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:50 〜 16:57 |PDF ダウンロード

[A-6-08] TCAD Simulation for Capture / Emission of Carriers by Traps in SiN: Trap-Assisted Tunneling Model Extended for Capture of Carriers Injected via Fowler-Nordheim Tunneling

〇Michiru Hogyoku¹、Yoshinori Yokota¹、Kazuhito Nishitani¹ (1.KIOXIA Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:57 〜 17:04 |PDF ダウンロード

[A-6-09] Distribution Analysis of Minimum Operating Voltage in Fully Depleted SOI SRAM Cells

〇Hongkuan Yu¹、Tomoko Mizutani¹、Kiyoshi Takeuchi¹、Takuya Saraya¹、Masaharu Kobayashi^1,2、Toshiro Hiramoto¹ (1.IIS, the University of Tokyo、2.d.lab, the University of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 17:04 〜 17:11 |PDF ダウンロード

[A-6-10] Contactless Characterization of SiO_x/c-Si by FTIR and μ-PCD applied to pMOS Devices

〇Mickael Lozach¹、Sommawan Khumpuang^1,2、Shiro Hara^1,2 (1.Minimal Fab Promoting Organization、2.National Institute of Advanced Industrial Science and Technology (AIST))

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 17:11 〜 17:18 |PDF ダウンロード

[A-7-01 (Invited)] Enablement of Next Generation Nanosheet Technology

〇Nicolas Loubet¹、Curtis Durfee ¹、Julien Frougier¹、Shogo Mochizuki¹、Maruf Bhuiyan ¹、Ruqiang Bao ¹、Andrew Greene¹、Eric Miller¹、Indira Seshadri¹ (1.IBM Research)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:00 〜 09:30 |PDF ダウンロード

[A-7-02] High Density & High Drive Current Elongated SGT Transistor for Logic Circuit Having Process Compatibility with 1.5nm node SGT SRAM

〇Kenichi Kanazawa¹、Yisuo Li³、Tetsuo Izawa¹、Koji Sakui¹、Georg Strof²、Oskar Baumgartner²、Gerhard Rzepa²、Markus Karner²、Zlatan Stanojevic²、Nozomu Harada¹ (1.Semicon Consulting Ltd.、2.Global TCAD Solutions Ltd.、3.Unisantis Electronics Singapore Pre Ltd.)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:30 〜 09:37 |PDF ダウンロード

[A-7-03] The Impact of Self-Heating Effect on Noise Margin and Propagation Delay
of Complementary FET Inverter

〇Songhan Zhao¹、Wangyong Chen¹、Linlin Cai¹、Gang Du¹ (1.Institute of Microelectronics Peking University)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:37 〜 09:44 |PDF ダウンロード

[A-7-04] Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

〇Zihao Liu¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Inst. of Indus. Sci., The Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:44 〜 09:51 |PDF ダウンロード

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment

〇Tsung-En Lee¹、Shao-Tse Huang²、Chiung-Yi Yang²、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Yao-Jen Lee²、Shinichi Takagi¹ (1.Univ. of Tokyo、2.Taiwan Semiconductor Res. Inst.)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:51 〜 09:58 |PDF ダウンロード

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

〇HsienWen Wan¹、Yi-Ting Cheng¹、Chao-Kai Cheng¹、Yu-Jie Hong¹、Tien-Yu Chu¹、Chien-Ting Wu²、Jueinai Kwo³、Minghwei Hong¹ (1.National Taiwan Univ.、2.Taiwan Semiconductor Res. Inst.、3.National Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月9日(木) 09:58 〜 10:05 |PDF ダウンロード