[B-6-01 (Invited)] Technology Challenge and Opportunity of HfO₂-based FeFET Memory

〇Masaharu Kobayashi¹、Fei Mo¹、Jiawen Xiang¹、Jixuan Wu¹、Takuya Saraya¹、Toshiro Hiramoto¹ (1.The Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:45 〜 16:15 |PDF ダウンロード

[B-6-02] Scaling Behavior of FeFET with Domain Reduction in Ferroelectric Layer

Sourabh Jindal¹、Simone Balatti²、Arvind Kumar²、Mahendra Pakala²、〇Sanjeev Kumar Manhas¹ (1.ECE Dept, Indian Institute of Technology Roorkee、2.Advanced Product and Technology Development (APTD), Applied Materials)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:15 〜 16:22 |PDF ダウンロード

[B-6-03] Evaluation of 2D Ferroelectric-FET NVMs considering Memory Window and Reliability related Interlayer Field

〇You Sheng Liu¹、Pin Su¹ (1.National Yang Ming Chiao Tung University)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:22 〜 16:29 |PDF ダウンロード

[B-6-04] Optimization of Junctionless Ferroelectric Field-Effect Transistors for Non-Volatile Memory Applications

〇Manish Gupta¹、Vita Pi-Ho Hu¹ (1.National Taiwan Univ.,)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:29 〜 16:36 |PDF ダウンロード

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

〇Mohit Mohit¹、Shinji Migita²、Hiroyuki Ota²、Yukinori Morita²、Eisuke Tokumitsu ¹ (1.Japan Advanced Institute of Science and Technology 、2.National Institute of Advanced Industrial Science and Technology )

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:36 〜 16:43 |PDF ダウンロード

[B-6-06] High Performance Self-rectifying Ferroelectric Tunnel Junction Devices Formed by Domain Pinning Effect Attributed to Interfacial Oxygen Vacancy

〇Youngin Goh¹、Jeong Hyeon Hwang¹、Minki Kim¹、Sanghun Jeon¹ (1.KAIST)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:43 〜 16:50 |PDF ダウンロード

[B-6-07] Oxygen Vacancies Modulated Tunnel Junction Memristor with Improved Tunneling Electroresistance Ratio

〇Fenning Liu¹、Yue Peng¹、Genquan Han¹、Wenwu Xiao²、Yan Liu¹、Yue Hao¹ (1.Xidian Univ.、2.Xi'an UniIC Semiconductors)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:50 〜 16:57 |PDF ダウンロード

[C-4-01 (Invited)] mmWave Front End Antenna Package and High Bandwidth Component By LTCC Technology

〇Chun-An Lu¹ (1.ITRI)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 10:45 〜 11:15 |PDF ダウンロード

[C-4-02] Study of Dicing Street Effect for Warpage Reduction in Wafer-to-Wafer Bonding Fabrication

〇Wei Feng¹、Haruo Shimamoto¹、Tsuyoshi Kawagoe²、Ichirou Honma²、Masato Yamasaki²、Fumitake Okutsu²、Takatoshi Masuda²、Katsuya Kikuchi¹ (1.National Inst. of Advanced Indus. Sci. and Tech. (AIST)、2.UltraMemory Inc.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:15 〜 11:22 |PDF ダウンロード

[C-4-03] Wafer-Level Capillary Underfill Technology with Controlled Fillet Configuration for Multichip-to-Wafer 3D Integration

〇Shuai Liu¹、Aoba Onishi¹、Hisashi Kino¹、Takafumi Fukushima¹、Tetsu Tanaka¹ (1.Tohoku Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:22 〜 11:29 |PDF ダウンロード