2022 International Conference on Solid State Devices and Materials

Sep 26, 2022 - Dec 23, 2022
Makuhari Messe

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419 results (331 - 340)

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[J-4-04 (Late News)] Efficient Optimization of Power Device Structure by Active Learning

〇Hayate Yamano¹, Alexander Kovacs², Johann Fischbacher ², Katsunori Danno ¹, Yusuke Umetani ¹, Tetsuya Shoji ¹, Thomas Schrefl ² (1. Toyota Motor Corp. (Japan), 2. Danube Univ. Krems (Austria))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 10:00 AM - 10:15 AM |PDF Download

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 10:45 AM - 11:00 AM |PDF Download

[J-5-02] Influence of surface steps on the contraction of 4H-SiC basal plane dislocations

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 11:00 AM - 11:15 AM |PDF Download

[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition

〇Kazuhiro "-" TANAKA¹, Keisuke NAGAYA¹, Masashi KATO¹ (1. Nagoya Institute Technology (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 11:15 AM - 11:30 AM |PDF Download

[J-5-04] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Kotaro Matsuguchi¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 11:30 AM - 11:45 AM |PDF Download

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

〇Takuma - Yasunami¹, Daisuke - Nakamura¹, Keita - Katayama¹, Yoshiaki - kakimoto^1,2, Toshifumi - Kikuchi¹, Hiroshi - Ikenoue^1,2 (1. Univ. of Kyushu (Japan), 2. Department of Gigaphoton NEXT GLP (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 11:45 AM - 12:00 PM |PDF Download

[J-6-01] Improvement of Channel Mobility in AlSiO/GaN MOSFETs using Thin Interfacial Layers to Reduce Border Traps

〇Kenji Ito¹, Kazuyoshi Tomita², Daigo Kikuta¹, Masahiro Horita², Tetsuo Narita¹ (1. Toyota Central R&D Labs., Inc. (Japan), 2. Nagoya Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 1:30 PM - 1:45 PM |PDF Download

[J-6-02] Suppression of GaO_x interlayer growth towards stable SiO₂/GaN MOS devices

〇Kentaro Onishi¹, Takuma Kobayashi¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takayoshi Shimura¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. JAEA (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 1:45 PM - 2:00 PM |PDF Download

[J-6-03] Characterization of Trap States of SiO₂/GaN Interface and SiO₂ Layer by Deep Level Transient Spectroscopy

〇Shingo Ogawa¹, Hidetoshi Mizobata², Takuma Kobayashi², Takayoshi Shimura², Heiji Watanabe² (1. Toray Research Center (Japan), 2. Osaka Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 2:00 PM - 2:15 PM |PDF Download

[J-6-04] High Quality Al₂O₃/SiC Gate Stack Fabricated by Microwave Plasma Annealing

〇Nannan You^1,2, Xinyu Liu^1,2, Qian Zhang^1,2, Jiayi Wang¹, Yang Xu¹, Yu Wang^1,2, Shengkai Wang^1,2 (1. Inst. of Beijing (China), 2. Univ. of Beijing (China))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 2:15 PM - 2:30 PM |PDF Download

419 results (331 - 340)

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