[F-2-03] Effect of SiN Sidewall and Reference-Layer-Thickness Dependence of MR Ratio for High Performance STT-MRAM

〇Yoshiteru Amemiya¹, Junichi Tsuchimoto^1,2, Hiroyuki Hosoya², Hiroki Nakanishi¹, Chihiro Watanabe¹, Akinobu Teramoto¹ (1. Hiroshima Univ. (Japan), 2. CANON ANELVA Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:30 PM - 2:45 PM |PDF Download

[F-2-04] Hf_1-xZr_xO₂ RRAM Prepared via Co-Sputtering with High Uniformity, Fast Switching Time of 10 ns, and Low Switching Energy of 20 pJ

〇Quanzhou Zhu¹, Jun Lan¹, Bing Zhou¹, Muhammad Zaheer¹, Jinxuan Liang¹, Peng Chen¹, Feichi Zhou¹, Longyang Lin¹, Guobiao Zhang¹, Mei Shen¹, Xuewei Feng², Zhen Chen³, Zhixiong Li³, Yida Li¹ (1. Southern University of Science and Technology (China), 2. Shanghai Jiao Tong University (China), 3. Shenzhen Longsys Electronics Co., Ltd (China))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:45 PM - 3:00 PM |PDF Download

[F-2-05] Investigation of Structure Evolution and Oxygen-ion Migration in LaCoOx-Based Resistance Random Access Memory

〇Yen Jung Chen¹, Hung-Yang Lo¹, Jan-Chi Yang², Wen-Wei Wu¹ (1. National Yang Ming Chiao Tung University (Taiwan), 2. National Cheng Kung University (Taiwan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:00 PM - 3:15 PM |PDF Download

[F-2-06] Breaking the Thermal Stability Limit of Phase-Change Materials for Embedded Memory thanks to Innovative N-doped GeSe_1-xTe_xAlloys

〇Martina Tomelleri^1,2, Anthony Albanese¹, Chiara Sabbione¹, Niccolo Castellani¹, Christophe Licitra¹, Valentina M. Giordano ³, Daniel Benoit², Francoise Hippert⁴, Pierre Noe¹ (1. Inst. CEA-LETI, F-38000, Grenoble (France), 2. Indus. STMicroelectronics, F-38926 Crolles (France), 3. ILM, UMR 5306 Univ. Lyon 1-CNRS, F-69622 Villeurbanne Cedex (France), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble (France))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:15 PM - 3:30 PM |PDF Download

[F-3-01 (Invited)] HfO2–based FeRAM, from material perspective to circuit application

〇Jean Coignus¹, Terry Francois¹, Julie Laguerre¹, Simon Martin¹, Catherine Carabasse¹, Nicolas Vaxelaire¹, Adam Makosiej², Bastien Giraud ², Francois Andrieu ¹, Laurent Grenouillet¹ (1. CEA-Leti (France), 2. CEA-LIST (France))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:15 PM - 4:45 PM |PDF Download

[F-3-02] Physical Origin of Ferroelectric-like Behaviors in MIM with Amorphous Dielectric

〇Huan Liu¹, Jing Li², Chengji Jin¹, Jiajia Chen¹, Ze Feng³, Yan Liu², Hong Dong³, Xiao Yu¹, Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China), 3. Nankai University (China))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:45 PM - 5:00 PM |PDF Download

[F-3-03] Universal Phase Transition on the Polarization Switching Cycling of Antiferroelectric/Ferroelectric Hf_xZr_1-xO₂ towards high endurance performance

〇Danyang Chen¹, Shuman Zhong¹, Tianning Cui¹, Liying Wu¹, Jingquan Liu¹, Mengwei Si¹, Xiuyan Li¹ (1. Shanghai Jiao Tong Univ. (China))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:00 PM - 5:15 PM |PDF Download

[F-3-04] Electrical Assessment of Scaled HfO₂-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration

〇Justine Barbot¹, Jean Coignus¹, François Triozon¹, Catherine Carabasse¹, Olivier Glorieux¹, François Aussenac¹, François Andrieu¹, Laurent Grenouillet¹ (1. CEA-Leti (France))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:15 PM - 5:30 PM |PDF Download

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO₂ Capacitors for BEOL Compatible and High Throughput FeRAM

〇Jia-Yang - Lee^1,2, Kuo-Yu Hsiang^1,3, Chun-Yu Liao¹, Zhao-Feng Lou¹, Chen-Ying Lin¹, Song-Lin Tang¹, Fu-Sheng Chang¹, Zhi-Xian Li¹, Wei-Chang Ray¹, Han-Chen Tseng¹, Chun-Chieh Wang¹, Ming-Han Liao⁴, Chee-Wee Liu², Min-Hung Lee¹ (1. Inst. and Undergraduate Program of Electro-Optical Eng. , National Taiwan Normal Univ. (Taiwan), 2. Graduate School of Advance Tech. , National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of mechanical engineering, National Taiwan Univ. (Taiwan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:30 PM - 5:45 PM |PDF Download

[F-3-06 (Late News)] Read-disturb & Data-retention Error-robust and Fast Training Methods of FeFET LM-GA CiM for Hyperdimensional Computing

Eitaro Kobayashi¹, 〇Chihiro Matsui¹, Naoko Misawa¹, Ken Takeuchi¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:45 PM - 6:00 PM |PDF Download