[C-10-03] THz Ferrimagnetic Oscillation Based on the Atomistic Model

〇Xue Zhang¹, Baofang Cai², Jie Ren¹, Zhengping Yuan¹, Yumeng Yang¹, Gengchiau Liang², Zhifeng Zhu¹ (1. Univ.of ShanghaiTech (China), 2. National Univ.of Singapore (Singapore))

2022 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2022 4:30 PM - 4:45 PM |PDF Download

[C-10-04] Investigation of Multileveled Spin Orbit Torque Magnetization Switching for High Density Magnetic Memory

〇uraku kamihoki¹, Yuichiro Kurokawa¹, Masahiro Fujimoto¹, Masahiro Itoh¹, Hiromi Yuasa¹ (1. Kyushu Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2022 4:45 PM - 5:00 PM |PDF Download

[C-10-05] Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM

〇Keisuke Morishita¹, Yosuke Harashima², Masaaki Araidai^1,3, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,3,4 (1. Univ. of Nagoya (Japan), 2. NAIST (Japan), 3. Inst. of Materials and Systems for Sustainablity (Japan), 4. Center for Innovative Intergrated Electronic Systems (Japan), 5. Univ. of Tohoku (Japan), 6. Research Inst. Electrical Communiaction (Japan))

2022 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2022 5:00 PM - 5:15 PM |PDF Download

[C-10-06 (Late News)] Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers

〇Julian Sasaki¹, Shigeki Takahashi², Yoshiyuki Hirayama², Pham Nam Hai¹ (1. Tokyo Institute of Technology (Japan), 2. Samsung R&D Institute Japan (Japan))

2022 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2022 5:15 PM - 5:30 PM |PDF Download

[D-1-01] Comparison of the H₂S gas response characteristics of semiconductor gas sensors (HFGFET-, TFT-, and resistor-type) fabricated on the same wafer.

〇Gyuweon Jung¹, Wonjun Shin¹, Hunhee Shin¹, Seongbin Hong¹, Yujeong Jeong¹, Kangwook Choi¹, Jinwoo Park¹, Donghee Kim¹, Chayoung Lee¹, Jaehyeon Kim¹, Woo Young Choi¹, Jong-Ho Lee¹ (1. Seoul Nat. Univ. (Korea))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 11:30 AM - 11:45 AM |PDF Download

[D-1-02] Distributed CMOS chip for retinal prosthesis
with high-rate stimulation

〇Yuki - Nakanishi¹, Kiyotaka - Sasagawa¹, Ronnakorn - Siwadamrongpong¹, Kenzo - Shodo², Yasuo - Terasawa², Hironari - Takehara¹, Makito - Haruta¹, Hiroyuki - Tashiro^1,3, Jun - Ohta¹ (1. Nara Inst. of Sci. and Tech. (Japan), 2. Nidek Co. LTD (Japan), 3. Kyushu Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 11:45 AM - 12:00 PM |PDF Download

[D-1-03] Design and Evaluation of Light and Dark Adaptation Functions for High QoL Artificial Vision Chip

〇Kohei Nakamura¹, Yaogan Liang¹, Bang Du¹, Shengwei Wang¹, Yuta Aruga¹, Bunta Inoue¹, Hisashi Kino¹, Takafumi Fukushima¹, Koji Kiyoyama², Tetsu Tanaka¹ (1. Tohoku Univ. (Japan), 2. Nagasaki Inst. of Applied Sci. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 12:00 PM - 12:15 PM |PDF Download

[D-1-04] Controlling Fluorescence Quenching Efficiency of Graphene Oxide to Lipid Bilayers using SiO₂ Layer Fabricated by Atomic Layer Deposition

Jocelyn Min Yuan Lau¹, Kensaku Kanomata², Fumihiko Hirose², 〇Ryugo Tero¹ (1. Toyohashi Univ. Tech. (Japan), 2. Yamagata Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 12:15 PM - 12:30 PM |PDF Download

[D-2-01 (Invited)] Electrochemical imaging system and its application for vascular model and stem cell differentiation

〇Hitoshi Shiku¹ (1. Tohoku Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:00 PM - 2:30 PM |PDF Download

[D-2-02] High-Sensitivity Extended Gate Field-Effect Transistor-Type Dopamine Sensor Based on Resistance-Coupling Effect

〇Tae-Hwan Hyun¹, Won-Ju Cho¹ (1. Kwangwoon Univ. (Korea))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:30 PM - 2:45 PM |PDF Download