[B-6-6] One-Step-MOVPE-Grown Index-Guide GaInP/AlGaInP Visible Laser Using Simultaneous Impurity Doping

Chikashi ANAYAMA、Makoto KONDO、Hiroshi SEKIGUCHI、Kay DOMEN、Hisao SUDO、Akira FURUYA、Toshiyuki TANAHASHI (1.Fujitsu Laboratories Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-1] Frontiers of Monolithic Integration of Semiconductor III-V Optoelectronic Devices with Silicon Technology

M. Razeghi、R. Sudharsanan、J. C. C. Fan (1.Electrical Engineering and Computer Science Dept. Northwestern University)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-2] TEM and PL Characterization of GaAs and ZnSe/ZnCdSe Grown on Si

M. M. Al-Jassim、K. M. Jones、S. P. Ahrenkiel、B. M. Keyes、S. M. Vernon、N. H. Karam、J. Furdyna (1.National Renewable Energy Laboratory、2.Spire Corporation、3.Dept. of Physics, Univ. of Notre Dame)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-3] Critical Thickness of Heteroepitaxial Si1-xGex/Si Layers as Studied by Atomic Force Microscopy

Toshiyuki NAKAMURA、Morifumi OHNO、Kinya ASHIKAGA、Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-4] X-Ray Standing Wave Analysis of GaAs/Si Interface

Tomoaki Kawamura、Hisataka Takenaka、Makoto Uneta、Masaharu Oshima、Yukio Fukuda、Yoshiro Ohmachi、Koichi Izumi、Tetsuya Ishikawa、Seishi Kikuta、Xiao Wei Zhang (1.NTT Interdisciplinary Research Laboratories、2.NTT Optoelectronics Laboratories、3.Faculty of Engineering, The University of Tokyo、4.Photon Factory, National Laboratory for High Energy Physics)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-5] Effect of Dislocation Networks at SLS Interfaces on the Reduction of Threading Dislocations in GaAs/Si

Akiyoshi Tachikawa、Aiji Jono、Takashi Aigo、Akihiro Moritani (1.Electronics Research Laboratories, Nippon Steel Corp.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-6] Initial Growth Stages and Defect Control in GaAs on Si

Masao TAMURA、Akihiro HASHIMOTO、Tohru SAITO、Joyce PALMER (1.Optoelectronics Technology Research Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-7] Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy

Kazuhiko Nozawa、Yoshiji Horikoshi (1.NTT Basic Research Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-8] Reduction of Dislocation Density of GaAs on Si(100) by Low Temperature Growth and Atomic Hydrogen Irradiation

Hirofumi SHIMOMURA、Yoshitaka OKADA、Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-9] Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

H. Katahama、K. Asai、Y. Shiba (1.Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF ダウンロード