[PD-4-6] Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process

Wataru SHINDO、Masaki HIRAYAMA、Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-7] Quantum-Well Silicon p-n Junctions and n-p-n Transistor Structures

N. T. Bagraev、E. I. Chaikina、L. E. Klyachkin、A. M. Malyarenko、V. L. Sukhanov (1.A. F. Ioffe Physico-Technical Institute)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-8] Advanced Langmuir Probes for RF Discharge Plasmas

Masaki Hirayama、Tadahiro Ohmi (1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-9] Contactless Measurement of Surface Temperature and Surface Potential of Semiconductor by Photoreflectance Spectroscopy

Akira FUJIMOTO Hideo KATSUMI、Masanori OKUYAMA、Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Wakayama National College of Technology、2.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PD-4-10] Low Temperature CVD of High Quality SiO2 Film Using Helicon Plasma Source

Yuko NISHIMOTO、Noboru TOKUMASU、Kazuo MAEDA (1.Semiconductor Process Laboratory Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] Micromachined Silicon-Based Analytical Microinstruments for Space Science and Planetary Exploration

F. J. Grunthaner、R. E. Salder、S. Boumsellek、T. R. VanZandt、T. W. Kenny、M. H. Hecht、A. Ksendzov、M. L. Homer、R. W. Terhune、A. L. Lane、M. A. Butler、A. J. Ricco (1.Center for Space Microelectronics, Jet Propulsion Laboratory, California Institute of Technology、2.Sandia National Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-2] The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly Reliable and High Performance Sub-Quarter Micron Dual Gate CMOS

M. Kobayashi、T. Kuroi、M. Shirahata、Y. Okumura、S. Kusunoki、M. Inuishi、N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] Improved Pattern Profile Based on Analyzing between Substrate Surface and Chemically Amplified Resist

Shigeyasu MORI、Kouichirou ADACHI、Takashi SUGIHARA、Takashi FUKUSHIMA、Junkou TAKAGI (1.Central Research Laboratories, SHARP Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-4] Study of Initial Growth Mechanism in TEOS-O3 SiO2 Using ATR-FTIR

T. Yoshie、T. Usami、K. Shimokawa、M. Yoshimaru (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] Pulse-Time Modulated Electron Cyclotron Resonance Plasma Discharge for Precise ULSI Patterning

Seiji Samukawa (1.LSI Basic Research Laboratory, Microelectronics Research Laboratories, NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF ダウンロード