[A-4-2] Quasi-One Dimensional Conduction in Polycrystalline Silicon Nano Wire

Yasuo Wada, Mitsuo Suga, Tokuo Kure, Yoshimi Sudou, Toshiyuki Yoshimura, Takashi Kobayashi, Yasushi Gotou, Seiichi Kondo (1.Advanced Research Laboratory, Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Origin of Chaos in Thyristors

Takahiro IRITA, Tatsuo TSUJITA, Minoru FUJISHIMA, Koichiro HOH (1.Department of Electronic Engineering, the University of Tokyo)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Fabrication of Superconducting NbN Gate MOSFET for Hybrid Circuit Applications

N. Suzuki, K. Yamamoto, S. Matsumoto, I. Kurosawa, M. Aoyagi, S. Takada (1.Faculty of Science and Technology, Keio University, 2.Electrotechnical Laboratory)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-4-5] Low Temperature Impurity Diffusion in 6H-SiC: Planar Quantum-Well P-N Junctions and N-P-N Transistor Structures

N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov (1.A. F. Ioffe Physico-Technical Institute)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Local Dielectric Breakdown of Thin Silicon Oxide by Dense Contact Electrification

Yoshinobu FUKANO, Takayuki UCHIHASHI, Takahiro OKUSAKO, Yasuhiro SUGAWARA, Yoshiki YAMANISHI, Takahiko OASA, Seizo MORITA (1.Department of Physics, Faculty of Science, Hiroshima University, 2.Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Study on the Fundamental Electrical Properties of Ultra-Thin Oxides Grown by Low Temperature Microwave Plasma Afterglow Oxidation

P. C. Chen, Klaus Y. J. Hsu, J. Y. Lin, H. L. Hwang (1.Department of Electrical Engineering, National Tsing Hua University, 2.Department of Electrical Engineering, Chung Cheng Institute of Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nordheim Stressed CMOS Transistors

Tomasz BROZEK, Chand R. VISWANATHAN (1.Department of Electrical Engineering, University of California, 2.Institute of Microelectronics and Optoelectronics, Warsaw University of Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Common Origin of Stress-Induced Leakage Current and Electron Trap Generation

Hideki Satake, Akira Toriumi (1.ULSI Research Laboratories, Toshiba Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] New Experimental Findings on Stress Induced Leakage Current of Ultra Thin Silicon Dioxides

Kenji OKADA, Satoko KAWASAKI, Yuichi HIROFUJI (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth

Masahiro Sasaki, Seikoh Yoshida (1.Optoelectronics Technology Research Laboratory (OTL))

1994 International Conference on Solid State Devices and Materials |PDF Download

340 results (181 - 190)

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