Oral presentation

[16a-D3-1~11] 6.3 Oxide-based electronics

Mon. Sep 16, 2013 10:00 AM - 1:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[16a-D3-1] Synthesis of layered double perovskite oxides by low-temperature oxidation

^○Noriya Ichikawa¹, Yoshiteru Hosaka¹, Takashi Saito¹, Yuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

10:15 AM - 10:30 AM

[16a-D3-2] Initial Growth of Magnetite Pyramid Structures

^○Ryota Takahashi¹, Hikaru Misumi¹, Takahisa Yamamoto², Mikk Lippmaa¹ (ISSP, University of Tokyo¹, Nagoya University²)

10:30 AM - 10:45 AM

[16a-D3-3] Phase control of a perovskite oxide through oxygen octahedral connectivity

^○Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimaakawa^1,2 (ICR Kyoto Univ.¹, JST-CREST²)

10:45 AM - 11:00 AM

[16a-D3-4] Crystal Growth of Magnesium Oxide Thin Films having Metal Microparticulated by an Arc Plasma Gun

^○Hiroki Kosuga¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

11:00 AM - 11:15 AM

[16a-D3-5] Crystal Growth of Two-Layer Structure Metal Oxide Thin Films Fabricated by Wet Process

^○Tsubasa Kanamori¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

11:15 AM - 11:30 AM

[16a-D3-6] Magnetotransport of pyrochlore iridate thin films fabricated by pulsed laser deposition

^○Yusuke Kozuka¹, Takahiro Fujita¹, Atsushi Tsukazaki^2,3, Taka-hisa Arima^4,5, Masashi Kawasaki^1,5 (Dept. Appl. Phys., Univ. Tokyo¹, IMR, Tohoku Univ.², JST-PRESTO³, Dept. Adv. Mater. Sci., Univ. Tokyo⁴, RIKEN CEMS⁵)

Break （11:30 AM - 11:45 AM）

11:45 AM - 12:00 PM

[16a-D3-7] First Principles DFT+U Study of Electronic Structures of Lanthanide Oxides

^○Tomoyuki Hamada¹, Takahisa Ohno², Sadamichi Maekawa³ (Hitachi Central Res. Lab¹, NIMS², JAEA³)

12:00 PM - 12:15 PM

[16a-D3-8] Sodium Ion Diffusion in Layered Na_xCoO₂

^○(PC)Takayuki Shibata¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2 (Univ. of Tsukuba¹, TIMS²)

12:15 PM - 12:30 PM

[16a-D3-9] Synthesis and Electrode Properties of Thick (104)-Oriented LiCoO₂ Epitaxial Films

^○Kazunori Nishio¹, Narumi Ohta¹, Tsuyoshi Ohnishi¹, Kazuori Takada¹ (NIMS¹)

12:30 PM - 12:45 PM

[16a-D3-10] In vacuo fabrication of all-solid-state thin film lithium-ion battery

^○Masakazu Haruta¹, Tohru Suzuki¹, Akichika Kumatani¹, Yoshitaka Takagi¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (Tohoku Univ.¹)

12:45 PM - 1:00 PM

[16a-D3-11] Electrochemical property of the composition by ground process of active materials based on silicon and oxides

^○Norihiro Shimoi¹, Zhang Qiwu¹, Sharon Marie Garrido¹, Yasumitsu Tanaka¹, Kazuyuki Tohji¹ (Tohoku Univ¹)

Oral presentation

[16p-D3-1~13] 6.3 Oxide-based electronics

Mon. Sep 16, 2013 2:30 PM - 6:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:30 PM - 2:45 PM

[16p-D3-1] Epitaxial growth and physical properties of LaVO_xN_y thin films

^○Masahito Sano^1,3, Yasushi Hirose^1,2,3, Shoichiro Nakao^2,3, Chang Yang^1,2,3, Souhei Okazaki^2,3, Tomoteru Fukumura^1,2,3, Satoshi Ishii⁴, Kimikazu Sasa⁴, Daiichiro Sekiba⁴, Katsuyuki Fukutani⁵, Tetsuya Hasegawa^1,2,3 (Tokyo Univ.¹, JST-CREST², KAST³, Tsukuba Univ.⁴, Tokyo Univ.⁵)

2:45 PM - 3:00 PM

[16p-D3-2] Fabrication of 100 nm Width VO₂ Nanowires by Phase-Selective Etching

^○Takeaki Yajima¹, Yuma Ninomiya¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

3:00 PM - 3:15 PM

[16p-D3-3] Low-temperature growth of VO₂ thin films and substrate incident ion energy analysis in ICP-assisted sputtering method

^○Suruz Md.¹, Hanis Nurul¹, Kunio Okimura¹ (Tokai Univ.¹)

3:15 PM - 3:30 PM

[16p-D3-4] Modulation of conductive property in VO₂ nano-wires due to an air gap-mediated electric field

^○(M1)Tsubasa Sasaki¹, Hiroki Ueda¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

3:30 PM - 3:45 PM

[16p-D3-5] Electrical properties of VO₂ thin films deposited by reactive sputtering and the conductive type inversion caused by post-annealing

^○BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

3:45 PM - 4:00 PM

[16p-D3-6] Preparation of Fe₃O₄ thin films on thermally oxidized Si substrates by rapid thermal processing deoxidation method and their electrical- and magneto-conductive properties

^○Kazu Makino¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tomoyuki Horie³, Tetsuo Shimizu³ (Konan Univ.¹, Osaka Univ.², AIST³)

4:00 PM - 4:15 PM

[16p-D3-7] The revealed MIT property of a single electric domain in the one-dimensional (La,Pr,Ca)MnO₃ nanowire structure

^○Azusa Hattori¹, Yasushi Fujiwara¹, T. V. Anh Ngyuen¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

[16p-D3-8] Study on resistance switching of WOx prepared by reactive sputtering at the room temperature

^○Akitoshi Nakane¹, Keisuke Takamizawa¹, Takahiro Hiroi¹, Masashi Arita¹, Yasuo Takahashi¹, Tohru Yamada¹ (IST, Hokkaido Univ.¹)

4:45 PM - 5:00 PM

[16p-D3-9] Improvement of switching characteristics in MoO_x-ReRAM

^○(M1)Takahiro Hiroi¹, Akitoshi Nakane¹, Thana Sriviriyakul¹, Keisuke Takamizawa¹, Masashi Arita¹, Yasuo Takahashi¹ (IST, Hokkaido Univ.¹)

5:00 PM - 5:15 PM

[16p-D3-10] Observation and Analysis of MoOx ReRAMs with Cu Top Electrodes

^○Masaki Kudo¹, Yuuki Ohno¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹)

5:15 PM - 5:30 PM

[16p-D3-11] Electric-field-induced resistive switching in charge-ordered YbFe₂O₄ thin films

^○Tatsuya Hori¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

5:30 PM - 5:45 PM

[16p-D3-12] Development of Selector Cell for 3D Cross-point ReRAM Prepared by Sputtering

^○Natsuki Fukuda¹, Kazunori Fukuju¹, Mitsutaka Hirose¹, Isao Kimura¹, Yutaka Nishioka¹, Koukou Suu¹ (ULVAC, Inc.¹)

5:45 PM - 6:00 PM

[16p-D3-13] Epitaxial CeO2 Thin Films as a ReRAM Candidate

^○Michiko Yoshitake¹, Michal Vaclavu^1,2, Mykhailo Chundak^1,2, Vladimir Matolin², Toyohiro Chikyow¹ (National Inst. Materials Sci.¹, Charles Univ. in Prague²)

Oral presentation

[17a-D3-1~13] 6.3 Oxide-based electronics

Tue. Sep 17, 2013 9:30 AM - 1:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

△ [17a-D3-1] Epitaxial growth of anatase Ti_xTa_1-xO_1+yN_1-z thin film

^○Atsushi Suzuki^1,2,3, Yasushi Hirose^1,2,3, Daichi Oka^1,2,3, Syoichiro Nakao^2,3, Hiroyuki Matsuzaki⁴, Katsuyuki Fukutani⁵, Satoshi Ishii⁶, Kimikazu Sasa⁶, Daiichiro Sekiba⁶, Tomoteru Fukumura^1,2,3, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, KAST², JST-CREST³, Univ. of Tokyo⁴, Univ. of Tokyo⁵, Tsukuba Univ.⁶)

9:45 AM - 10:00 AM

△ [17a-D3-2] Effect of lattice mismatch on the spontaneous superlattice formation in SrTiO₃ thin film deposited using dynamic aurora PLD

^○(M1)Tomoaki Kubota¹, Naonori Sakamoto¹, Kazuo Shinozaki², Hisao Suzuki¹, Naoki Wakiya¹ (Shizuoka Univ.¹, Tokyo Tech.²)

10:00 AM - 10:15 AM

△ [17a-D3-3] Ferroelectricity of off-stoichiometric SrTiO₃ film

^○Shunsuke Kobayashi¹, Naoya Shibata², Yuichi Ikuhara², Yamamoto Takahisa^1,3 (Univ. Tokyo¹, Univ. Tokyo², Nagoya Univ.³)

10:15 AM - 10:30 AM

△ [17a-D3-4] Growth of anatase TiO₂ nanowires on various transparent conducting oxides

^○Takahiro Yamaguchi¹, Hirohito Kitajima¹, Yuki Yamaguchi¹, masunori Kawamura¹, Yoshihiko Ninomiya¹, Atsushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

10:30 AM - 10:45 AM

△ [17a-D3-5] Evaluation of Etching Damage Recovery in XAS spectra of TiO₂ Thin Films

^○Keiji Sano¹, Masahito Niibe¹, Retsuo Kawakami², Kikuo Tominaga², Yoshitaka Nakano³ (Univ. Hyogo¹, Univ. Tokushima², Chubu Univ.³)

10:45 AM - 11:00 AM

△ [17a-D3-6] Hydration Structure of Photocatalytic SrTiO₃ Observed by FM-AFM

^○Seiji Kawasaki¹, Shunsuke Suiko², Ryota Takahashi¹, Hiroshi Ohnishi², Mikk Lippmaa¹ (Univ. of Tokyo, ISSP¹, Kobe Univ. Graduate School of Science²)

11:00 AM - 11:15 AM

[17a-D3-7] Epitaxial growth of pyrochlore Bi₂Ti₂O₇ thin film with geometrical frustrated structure

^○Kyohei Yamatake¹, Jie Wei¹, Tomoteru Hukumura^1.2, Tetsuya Hasegawa^1,2 (Univ. of Tokyo¹, JST-CREST²)

Break （11:15 AM - 11:30 AM）

11:30 AM - 11:45 AM

[17a-D3-8] Schottky Barrier Formation at La:SrTiO₃/Nb:SrTiO₃ Ohmic Contacts by Charge-Layer Insertion

^○Takeaki Yajima^1,2, Yasuyuki Hikita², Christopher Bell², Harold Hwang^2,3 (Univ. of Tokyo¹, SLAC², Stanford Univ.³)

11:45 AM - 12:00 PM

[17a-D3-9] Photocatalytic Property of Hydrothermal TiO₂ Nanotubes

^○Masayuki Ishii¹, Ji-Won Lee², Masahiro Terauchi², Takeshi Yoshimura¹, Tadachika Nakayama², Norifumi Fujimura¹ (Osaka Pref. Univ.¹, Nagaoka Univ. of Tech.²)

12:00 PM - 12:15 PM

[17a-D3-10] Improvement of electronic property in Nb-F doped CVD-TiO₂ layer by wet-process

^○Satoshi Yamauchi¹, Kazuhiro Ishibashi¹ (Ibaraki Univ.¹)

12:15 PM - 12:30 PM

[17a-D3-11] Thermodynamic Phase Stabilities of Titania from the First-principles

^○(DC)Yuta Aoki¹, Susumu Saito¹ (Tokyo Inst. Tech.¹)

12:30 PM - 12:45 PM

[17a-D3-12] ITO thin films fabricated by hybrid facing-target sputtering on the film

^○Shinichi Morohashi¹, Keita Usui¹, Fumihiro Takaki¹, Naoyuki Harada¹, Takuya Murata¹ (Yamaguchi Univ.¹)

12:45 PM - 1:00 PM

[17a-D3-13] Transport Properties and Stoichiometry Control of ITO Single Crystalline Nanowires Grown by VLS Method

^○Masaki Kanai¹, Takeshi Yanagida¹, Gang Meng¹, Kazuki Nagashima¹, Tomoji Kawai¹ (ISIR, Osaka Univ.¹)

Oral presentation

[18a-D3-1~11] 6.3 Oxide-based electronics

Wed. Sep 18, 2013 9:30 AM - 12:30 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-D3-1] [Young Scientist Oral Presentation Award Speech](15 min.) Resistive Switching Devices Based on Redox Reactions of Transition Metal Nanostructures

^○Kohei Fujiwara¹ (ISIR, Osaka Univ¹)

9:45 AM - 10:00 AM

[18a-D3-2] [Young Scientist Oral Presentation Award Speech](15 min.) Direct observation of octahedral distortions in SrRuO₃ epitaxial thin films using STEM

^○Ryotaro Aso¹, Daisuke Kan¹, Yuichi Shimakawa^1,2, Hiroki Kurata^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

10:00 AM - 10:15 AM

△ [18a-D3-3] Memory characteristics of highly drift resistant tiny ReRAM cell constructed between AFM cantilever and bottom electrode substrate

^○Sang-Gyu Koh¹, Yusuke Sawai¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

10:15 AM - 10:30 AM

[18a-D3-4] Advanced Modeling of Unipolar Resistive Switching of Pt/TiO₂Pt Capacitor

^○Yusuke Kondo¹, Yasuhisa Omura¹ (Kansai Univ.¹)

10:30 AM - 10:45 AM

△ [18a-D3-5] Impact of the properties of NiO films on forming voltage of Pt/NiO/Pt resistive switching cells

^○(DC)Tatsuya Iwata¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

10:45 AM - 11:00 AM

△ [18a-D3-6] p-CuOx/SiOx/n-SiC/n-Si Diode-Structured Resistive Nonvolatile Memory

^○Atsushi Yamashita¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

Break （11:00 AM - 11:15 AM）

11:15 AM - 11:30 AM

△ [18a-D3-7] Elucidation of Microscopic Switching Mechanism in Conducting-Bridge Memory Using Ab Initio Calculation

^○Sho Yura¹, Takahiro Yamasaki³, Kengo Nakada¹, Akira Isii¹, Satoru Kisida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center², NIMS³)

11:30 AM - 11:45 AM

△ [18a-D3-8] A role of water on filament formation in HfO₂-CB-RAM part II

^○Sho Hasegawa¹, Masato Yoshihara¹, Naonobu Katada¹, Satoru Kshida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

11:45 AM - 12:00 PM

△ [18a-D3-9] Acquirement of Physical Property of Filament in Filament-Type Resistive Memories

^○Takumi Moriyama¹, Ryosuke Koishi¹, Kouhei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

12:00 PM - 12:15 PM

[18a-D3-10] Elucidating direct influence of atmospheric gases on physical property of filament using nano-scale planar ReRAM

^○Yusuke Sawai¹, Sang-Gyu Koh¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

12:15 PM - 12:30 PM

[18a-D3-11] Correlation between optical properties and resistance switching behaviors in Pr_1-xCa_xMnO₃ thin films

^○Masaki Yamada¹, Osamu Sakai¹, Toshihiro Nakamura² (Kyoto Univ.¹, Osaka Electro-Communication Univ.²)

Oral presentation

[18p-D3-1~17] 6.3 Oxide-based electronics

Wed. Sep 18, 2013 2:00 PM - 7:00 PM D3 (MK 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:30 PM - 2:00 PM）

2:00 PM - 2:30 PM

[18p-D3-1] [Award for Best Review Paper Speech](30 min.) Exploring Electroactive Functionality of Oxide Materials for Ceramics: Features and Prospects of Transparent Oxides

^○Hideo Hosono¹ (Titech¹)

2:30 PM - 2:45 PM

[18p-D3-2] [JSAP Young Scientist Award Speech](15 min.) High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

^○Kazuaki Ebata¹ (Idemitsu Kosan¹)

2:45 PM - 3:00 PM

[18p-D3-3] Electrical properties of gallium and nitrogen doped ZnO films

^○(M2)Takumi Araki¹, Jun-ichi Iwata¹, Yuu Hirano¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

3:00 PM - 3:15 PM

[18p-D3-4] Fabrication of Ag/MgZnO-DMD UV-range transparent conductive film

^○Shinya Shirasaki¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

3:15 PM - 3:30 PM

[18p-D3-5] Atom probe analysis of ZnO nanorod grown by hydrothermal synthesis method

^○(M2)Yousuke Naganawa¹, Tatsuo Iwata², Shigekazu Nagai^1,2, Kazuo Kajiwara^1,2, kouichi Hata^1,2, Tomohiro Sakai³, Nobuya Hiroshiba³, Yo Ichikawa³ (Graduate School of Eng., Mie Univ.¹, CUTE², Graduate School of Eng., Nagoya Inst. of Technol.³)

3:30 PM - 3:45 PM

[18p-D3-6] Luminescence properties of Zinc Oxide Nanowire Grown on Silicon Substrate

^○(M1)Tsutomu Fujii¹, Takeshi Ishiyama¹, Yuya Ishii¹, Mitsuo Fukuda¹ (Toyohashi University of Technology¹)

3:45 PM - 4:00 PM

[18p-D3-7] A Nonvolatile Programmable Logic Element utilizing Crystalline In-Ga-Zn-O

^○Masataka Ikeda¹, Okamoto Yuki¹, Takashi Nakagawa¹, Takeshi Aoki¹, Munehiro Kozuma¹, Takeshi Osada¹, Yoshiyuki Kurokawa¹, Takayuki Ikeda¹, Naoto Yamade¹, Yutaka Okazaki¹, Hidekazu Miyairi¹, Jun Koyama¹, Shunpei Yamazaki¹ (SEL¹)

4:00 PM - 4:15 PM

[18p-D3-8] Effects of hydrogen impurity to electron and mass transport behavior in tin dioxide

^○Naoki Ohashi^1,2,3, Ken Watanabe¹, Isao Sakaguchi^1,3, Yutaka Adachi¹, Shunichi Hishita¹, Ryosuke Takahashi^1,3, Oliver Bierwagen^4,5, James Speck⁴, Hajime Haneda¹, Alex Brian¹ (NIMS¹, TIES, Tokyo Tech.², ASEM, Kyushu Univ.³, UCSB⁴, PDI-Berlin⁵)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [18p-D3-9] Phase stability and crystal structure of ZnIn2O4 thin film prepared using PLD

^○ryota izawa¹, kazuki tanemura¹, naonori sakamoto¹, kazuo shinozaki², hisao suzuki¹, naoki wakiya¹ (Shizuoka Univ¹, Tokyo Tech²)

4:45 PM - 5:00 PM

△ [18p-D3-10] Conduction property of electrochemically grown Cu₂O thin films evaluated by depletion layer capacitance analysis

^○Shunsuke Sato¹, Atsushi Ashida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (Osaka Prefecture Univ.¹)

5:00 PM - 5:15 PM

[18p-D3-11] Influence of preparation conditions of n-type semiconductor layer on photovoltaic properties in Cu₂O sheet-type heterojunction solar cells

^○Toshihiro Miyata¹, Yuki Nishi¹, Tadatsugu Minami¹ (Kanazawa I.T.¹)

5:15 PM - 5:30 PM

[18p-D3-12] Growth of p-type CuGaO₂ thin films for transparent solar cells

^○Kazuma Moriyama¹, Yasuhiro Matsumoto¹, Chang Shao-Wei¹, Daisuke Kawade¹, Mutsumi Sugiyama¹ (Faculty of Sci. & Tech./RIST, Tokyo Univ. of Science¹)

5:30 PM - 6:00 PM

[18p-D3-13] [JSAP Paper Award Speech](30 min.) Enhanced Photocurrent in Rh-Substituted α-Fe₂O₃ Thin Films Grown by Pulsed Laser Deposition

^○Munetoshi Seki¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (The Univ. of Tokyo¹)

6:00 PM - 6:15 PM

△ [18p-D3-14] Microstructure and magnetotransport characteristics of Fe3O4 (111) films obtained by post annealing in controlled atmosphere

^○Kosuke Matsuzaki¹, Leonardo Lari², Vlado Lazarov², Hideo Hosono¹, Tomofumi Susaki¹ (MSL, Tokyo Tech.¹, York Univ.²)

6:15 PM - 6:30 PM

△ [18p-D3-15] Unusual structure at hetero interface of SrFeO_2.5/DyScO₃

^○Kei Hirai¹, Ryotaro Aso¹, Daisuke Kan¹, Ichikawa Noriya¹, Kurata Hiroki^1,2, Shimakawa Yuichi^1,2 (Institute for Chemical Research, Kyoto Univ.¹, JST-CREST²)

6:30 PM - 6:45 PM

△ [18p-D3-16] Topotactic fluorination of SrFeOx thin films

^○Tsukasa Katayama¹, Akira Chikamatsu^1,2, Yasushi Hirose^1,2,3, Ryosuke Takagi¹, Hideyuki Kamisaka^1,2, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (University of Tokyo¹, JST-CREST², KAST³)

6:45 PM - 7:00 PM

△ [18p-D3-17] Fluorination of RNiO₃ (R=La, Nd) thin films with polyvinylidene fluoride

^○Tomoya Onozuka¹, Akira Chikamatsu^{1, 2}, Tsukasa Katayama¹, Tomoteru Fukumura^{1, 2}, Tetsuya Hasegawa^{1, 2, 3} (Univ. of Tokyo¹, JST-CREST², KAST³)

Poster presentation

[19a-P3-1~27] 6.3 Oxide-based electronics

Thu. Sep 19, 2013 9:30 AM - 11:30 AM P3 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-P3-1] Resistive Switching Device Consisting of 2-nm-thick Tantalum Oxide

^○Takeo Ohno¹, Seiji Samukawa^1,2 (WPI-AIMR, Tohoku Univ.¹, IFS, Tohoku Univ.²)

9:30 AM - 11:30 AM

[19a-P3-2] Study of Short-Range Structure of Amorphous NbOx Based on Molecular Orbital Calculations and Photoelectron Spectroscopies

^○Go Sajiki¹, Yasuhiko Benino², Tokuro Nanba², Hiroshi Okano¹ (Kagawa-NCT¹, Okayama Univ.²)

9:30 AM - 11:30 AM

△ [19a-P3-3] Fabrication of TiO₂ thin film for photocatalyst by atomic layer deposition

^○Fumiya Tanaka¹, Takahiro Shimizu¹, Yoshiko Nishimura², Kiyoshi Sannou², Kaoru Hamabe², Kazuki Ueda³, Kota Kato³, Hisayoshi Kobayashi³, Takahisa Jitsuno⁴, Mitsuru Inada¹, Tadashi Saito¹ (Kansai Univ.¹, EMATEC Japan², Kyoto Inst. of Tech³, ILE Osaka Univ.⁴)

9:30 AM - 11:30 AM

▲ [19a-P3-4] Hydrothermal growth of high surface area mesoporous anatase TiO2 nanospheres and dye sensitized solar cells performance

^○Archana Jayaram¹, Navaneethan Mani¹, Tadanobu Koyama¹, Yasuhiro Hayakawa¹ (RIE Shizuoka Univ¹)

9:30 AM - 11:30 AM

[19a-P3-5] Structural analysis of epitaxial LiCoO2 thin films on single-crystal metal substrates

^○Susumu Shiraki¹, Yoshitaka Takagi¹, Akichika Kumatani¹, Ryota Shimizu¹, Toru Suzuki¹, Masakazu Haruta¹, Takeo Ohsawa¹, Yukio Sato², Yuichi Ikuhara^2,3, Taro Hitosugi¹ (WPI-AIMR Tohoku Univ.¹, Univ. of Tokyo², JFCC³)

9:30 AM - 11:30 AM

[19a-P3-6] Fabrication and characterization of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junction

^○Hiroyuki Yamada¹, Atsushi Tsurumaki-Fukuchi¹, Yoshikiyo Toyosaki¹, Akihito Sawa¹ (AIST¹)

9:30 AM - 11:30 AM

[19a-P3-7] Effect of Ionic Liquid Gating on the Transport Properties of Zinc Ferrite Thin Films

^○Kohei Fujiwara¹, Takashi Ichimura¹, Tatsuya Hori¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-8] The Effect of Adsorbed Water on the Surface Depletion of SrTiO₃

^○Xiuyi Hou¹, Ryota Takahashi¹, Mikk Lippmaa¹ (ISSP, the University of Tokyo¹)

9:30 AM - 11:30 AM

[19a-P3-9] Photocatalytic effect of SrZnO thin film II

^○Tohru Okamoto¹, Taro Ogita¹, Susumu Harako¹, Shuji Komuro², Xinwei Zhao¹ (Tokyo Univ.of Science¹, Toyo Univ²)

9:30 AM - 11:30 AM

[19a-P3-10] Influence of substrate surface morphology on orientation of ZnO nanorods

^○Ryuji Okumura¹, Tomohiro Sakai¹, Nobuya Hiroshiba¹, Yo Ichikawa¹ (Nagoya Inst. of Tech.¹)

9:30 AM - 11:30 AM

[19a-P3-11] Examination of Oxidize Al Underlayer for SrAl2O4: Eu, Dy Thin Films by Annealing Method

^○Makoto Kitada¹, Kazuaki Kobayashi¹, Hidehiko Shimizu¹, Haruo Iwano¹, Yasuo Hukushima¹, Takahiro Kawakami¹ (Niigata Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-12] First-principle study of ionic conduction and ionic charge states in anion-doped zirconia

^○Mayuko Oka¹, Hideyuki Kamisaka^1,2, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³)

9:30 AM - 11:30 AM

[19a-P3-13] Preparation of a mesoporous cupper oxide electrode and its application to photorechargeable battery

^○(M2)Tomohito Yoshida¹, Teruaki Nomiyama¹, Yuji Horie¹ (Kagoshima Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-14] Fabrication of epitaxial CuO/ZnO p-n junctions

^○Ryota Seko¹, Mitsuru Kasuga¹, Yoshihiko Ninomiya¹, Atsushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-15] Relaxation of the Surface Energy of Mg/C Multi-layers as a Starting Material for Transparent Conductive Films

^○Masafumi Chiba¹, Yuto Goto¹, Hideo Kiyota² (School of High-Tech. for Human Welfare Tokai Univ.¹, Dept. of Elec. Eng. and Comp. Sci., Tokai Univ.²)

9:30 AM - 11:30 AM

[19a-P3-16] Fabrication of NiO:Na2O thin films for transparent solar cellsⅡ

^○Tatsunori Yamaguchi¹, Shota Tanaka¹, Tsutomu Obata¹, Takuro Tezuka¹, Tong Li¹, Susumu Harako¹, Shuji Komuro², Xinwei Zhao¹ (Tokyo Univ. of Science¹, Toyo Univ.²)

9:30 AM - 11:30 AM

[19a-P3-17] Compound oxide particulate thin film production evaluation and semiconductor gas sensor application by the liquid phase PLA method

^○HONGQUAN YANG¹, Yutaka Nagai¹, Hirosi Ono¹, Katumi Tanaka¹ (The Uni.of Electro-Communications,Japan¹)

9:30 AM - 11:30 AM

[19a-P3-18] Experimental Determination of Band Discontinuities at NiO/Semiconductor or Metal Heterointerfaces using Photoelectron Yield Spectroscopy

^○Daisuke Kawade¹, Kazuma Moriyama¹, Shigefusa ChiChibu², Mutsumi Sugiyama¹ (Faculty of Sci & Tech./RIST, Tokyo Univ. of Science¹, IMRAM, Tohoku Univ.²)

9:30 AM - 11:30 AM

△ [19a-P3-19] Phase control and characterization of cobalt oxide thin films grown by room-temperature Laser MBE

^○Akifumi Matsuda¹, Satoru Kaneko^1,2, Mamoru Yoshimoto¹ (Tokyo Tech¹, Kanagawa Ind. Tech. Cent.²)

9:30 AM - 11:30 AM

[19a-P3-20] Magnetic property of Ga-Mn co-doped ZnO thin films.

^○Junpei Okamoto¹, Susumu Harako¹, Xinwei Zhao¹ (Tokyo Univ.of Science¹)

9:30 AM - 11:30 AM

[19a-P3-21] Fabrication of Ga-doped ZnO thin films for transparent solar cellsⅡ

^○Shota Tanaka¹, Tutomu Obata¹, Takurou Tezuka¹, Tatunori Yamaguchi¹, Susumu Harako¹, Shuuji Komuro², Xinwei Zhao¹ (Tokyo Univ of Sci¹, Toyo Univ²)

9:30 AM - 11:30 AM

[19a-P3-22] Filament temperature dependence of swiching speed in transition-metal-oxide ReRAM

^○Ryosuke Koishi¹, Takumi Moriyama¹, Kouhei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

9:30 AM - 11:30 AM

[19a-P3-23] Preparation of OLEDs device by AZO thin films

^○Hirokazu Honda¹, Tomohiro Oshiki¹, Hidehiko Shimizu¹, haruo Iwano¹, Takahiro Kawakami¹ (Niirata Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-24] Strongly correlated (La,Pr,Ca)MnO₃ nanobox array structures constructed by 3D nanotemplate PLD technique and their conductive properties

^○Anh Nguyen¹, Azusa Hattori¹, Yasushi Fujiwara¹, Shigenori Ueda², Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹, NIMS²)

9:30 AM - 11:30 AM

[19a-P3-25] Temperature dependence of resistance of conductive filament formed in metal oxide layer

^○Yoshifumi Hamada¹, Shintaro Ostuka¹, Daisuke Ito¹, Tomohioro Shimizu¹, Shoso Shingubara¹ (Kansai Univ.¹)

9:30 AM - 11:30 AM

[19a-P3-26] Current – voltage characteristics of ReRAM involving porous alumina thin film with additional space control by pore widening

^○Yusuke Tanimoto¹, Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Syoso Shingubara² (Nihon Univ.¹, Kansai Univ.²)

9:30 AM - 11:30 AM

[19a-P3-27] Glancing Angle Deposition of TiO2 Films by Sputtering and Oxygen Ion Assisted Evaporation Method

^○Yoichi Hoshi¹, Yoji Yasuda¹, Naoto Kitaha¹ (Tokyo Polytechnic Univ.¹)

Sessions

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[16a-D3-1~11] 6.3 Oxide-based electronics

[16p-D3-1~13] 6.3 Oxide-based electronics

[17a-D3-1~13] 6.3 Oxide-based electronics

△ [17a-D3-1] Epitaxial growth of anatase TixTa1-xO1+yN1-z thin film

△ [17a-D3-2] Effect of lattice mismatch on the spontaneous superlattice formation in SrTiO3 thin film deposited using dynamic aurora PLD

△ [17a-D3-3] Ferroelectricity of off-stoichiometric SrTiO3 film

△ [17a-D3-4] Growth of anatase TiO2 nanowires on various transparent conducting oxides

△ [17a-D3-5] Evaluation of Etching Damage Recovery in XAS spectra of TiO2 Thin Films

△ [17a-D3-6] Hydration Structure of Photocatalytic SrTiO3 Observed by FM-AFM

[18a-D3-1~11] 6.3 Oxide-based electronics

△ [18a-D3-3] Memory characteristics of highly drift resistant tiny ReRAM cell constructed between AFM cantilever and bottom electrode substrate

△ [18a-D3-5] Impact of the properties of NiO films on forming voltage of Pt/NiO/Pt resistive switching cells

△ [18a-D3-6] p-CuOx/SiOx/n-SiC/n-Si Diode-Structured Resistive Nonvolatile Memory

△ [18a-D3-7] Elucidation of Microscopic Switching Mechanism in Conducting-Bridge Memory Using Ab Initio Calculation

△ [18a-D3-8] A role of water on filament formation in HfO2-CB-RAM part II

△ [18a-D3-9] Acquirement of Physical Property of Filament in Filament-Type Resistive Memories

[18p-D3-1~17] 6.3 Oxide-based electronics

△ [18p-D3-9] Phase stability and crystal structure of ZnIn2O4 thin film prepared using PLD

△ [18p-D3-10] Conduction property of electrochemically grown Cu2O thin films evaluated by depletion layer capacitance analysis

△ [18p-D3-14] Microstructure and magnetotransport characteristics of Fe3O4 (111) films obtained by post annealing in controlled atmosphere

△ [18p-D3-15] Unusual structure at hetero interface of SrFeO2.5/DyScO3

△ [18p-D3-16] Topotactic fluorination of SrFeOx thin films

△ [18p-D3-17] Fluorination of RNiO3 (R=La, Nd) thin films with polyvinylidene fluoride

[19a-P3-1~27] 6.3 Oxide-based electronics

△ [19a-P3-3] Fabrication of TiO2 thin film for photocatalyst by atomic layer deposition

▲ [19a-P3-4] Hydrothermal growth of high surface area mesoporous anatase TiO2 nanospheres and dye sensitized solar cells performance

△ [19a-P3-19] Phase control and characterization of cobalt oxide thin films grown by room-temperature Laser MBE

△ [17a-D3-1] Epitaxial growth of anatase Ti_xTa_1-xO_1+yN_1-z thin film

△ [17a-D3-2] Effect of lattice mismatch on the spontaneous superlattice formation in SrTiO₃ thin film deposited using dynamic aurora PLD

△ [17a-D3-3] Ferroelectricity of off-stoichiometric SrTiO₃ film

△ [17a-D3-4] Growth of anatase TiO₂ nanowires on various transparent conducting oxides

△ [17a-D3-5] Evaluation of Etching Damage Recovery in XAS spectra of TiO₂ Thin Films

△ [17a-D3-6] Hydration Structure of Photocatalytic SrTiO₃ Observed by FM-AFM

△ [18a-D3-8] A role of water on filament formation in HfO₂-CB-RAM part II

△ [18p-D3-10] Conduction property of electrochemically grown Cu₂O thin films evaluated by depletion layer capacitance analysis

△ [18p-D3-15] Unusual structure at hetero interface of SrFeO_2.5/DyScO₃

△ [18p-D3-17] Fluorination of RNiO₃ (R=La, Nd) thin films with polyvinylidene fluoride

△ [19a-P3-3] Fabrication of TiO₂ thin film for photocatalyst by atomic layer deposition