Oral presentation

[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2J (223)

座長:谷口知大(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [14a-2J-1] Voltage-induced magnetic anisotropy change in Fe|MgO tunnel junctions investigated by x-ray absorption spectroscopy

〇(M2)Kensho Matsuda¹, Shinji Miwa¹, Kazuhito Tanaka¹, Yoshinori Kotani², Minori Goto¹, Tetsuya Nakamura², Norikazu Mizuochi¹, Yoshishige Suzuki¹ (1.Osaka Univ., 2.JASRI/SPring-8)

9:15 AM - 9:30 AM

▼ [14a-2J-2] Voltage-induced magnetic anisotropy change in FePt|MgO tunnel junctions investigated by x-ray magnetic circular dichroism spectroscopy

〇Shinji Miwa¹, Kensho Matsuda¹, Motohiro Suzuki², Kazuhito Tanaka¹, Takayuki Nozaki³, Shinji Yuasa³, Yoshishige Suzuki^1,3 (1.Osaka Univ., 2.JASRI/SPring-8, 3.AIST)

9:30 AM - 9:45 AM

▲ [14a-2J-3] Effects of Chemical States at Interface on Electric Field Effects of CoFeB/MO_x stacks

〇Ryusuke Oishi¹, Koji Kita¹ (1.The Univ. of Tokyo)

9:45 AM - 10:00 AM

▼ [14a-2J-4] CoFeB thickness dependence of electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO structures

〇Atsushi Okada¹, Yoshinari Hashimoto¹, Shun Kanai^1,2, Fumihiro Matsukura^3,1,2, Hideo Ohno^1,2,3,4 (1.LNS-RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CIES, Tohoku Univ.)

10:00 AM - 10:15 AM

▲ [14a-2J-5] Evaluation of write error rate for voltage-induced dynamic switching in perpendicularly magnetized magnetic tunnel juncitons

〇Yoichi Shiota¹, Takayuki Nozaki¹, Shingo Tamaru¹, Kay Yakushiji¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki^1,2 (1.AIST Spintronics Research Center, 2.Osaka Univ.)

10:15 AM - 10:30 AM

▲ [14a-2J-6] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions

〇Takayuki Nozaki¹, Anna Koziol-Rachwal¹, Witold Skowronski^1,2, Zayets Vadym¹, Yoichi Shiota¹, Shingo Tamaru¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki^1,3 (1.AIST, 2.AGH. Univ., 3.Osaka Univ.)

10:30 AM - 10:45 AM

▲ [14a-2J-7] Voltage-induced magnetic anisotropy change of Fe-4f-metal alloys

〇(M2)Kazuhito Tanaka¹, Shinji Miwa¹, Norikazu Mizuochi¹, Yoshishige Suzuki¹ (1.Osaka Univ.)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

▼ [14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical current
in CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

〇Eriko Hirayama¹, Shun Kanai^1,2, Hideo Sato^2,3, Fumihiro Matsukura^1,2,4, Hideo Ohno^1,2,3,4 (1.LNS-RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

11:15 AM - 11:30 AM

▲ [14a-2J-9] Evaluation of non-linear parameter on spin torque oscillator

〇Sumito Tsunegi¹, Hitoshi Kubota¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

11:30 AM - 11:45 AM

▲ [14a-2J-10] Effects of Power Fluctuation on High-Signal-Transfer-Rate Read Heads Using Spin-Torque Oscillators: Study based on a Non-Linear Oscillator Model

〇Taro Kanao¹, Tazumi Nagasawa¹, Kiwamu Kudo¹, Hirofumi Suto¹, Michinaga Yamagishi¹, Koichi Mizushima¹, Rie Sato¹ (1.Toshiba Corp.)

11:45 AM - 12:00 PM

▲ [14a-2J-11] High-Power Spin-Torque Oscillator with Dual Free Layers of CoFeB and Synthetic Ferrimagnet

〇Tazumi Nagasawa¹, Hirofumi Suto¹, Kiwamu Kudo¹, Michinaga Yamagishi¹, Taro Kanao¹, Koichi Mizushima¹, Rie Sato¹ (1.Toshiba Corp.)

12:00 PM - 12:15 PM

▲ [14a-2J-12] Investigation of the emission power and Q factor of the MgO-based spin-torque oscillators with different diameters

〇(P)BOCHONG WANG¹, Hitoshi Kubota¹, Kay Yakushiji¹, Shingo Tamaru¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

Oral presentation

[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Sep 14, 2015 1:45 PM - 2:45 PM 2J (223)

座長:後藤穣(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co₂MnSi MTJs with high spin polarization

〇(D)Bing Hu¹, Kidist Moges¹, Hongxi Liu¹, Yusuke Honda¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Grad. School of Science and Technology, Hokkaido Univ.)

2:00 PM - 2:15 PM

▼ [14p-2J-2] CPP-GMR devices using Co₂Fe(Ga_0.5Ge_0.5) full Heusler alloy and a AgZn alloy spacer

〇(D)YE DU^1,2, Takao Furubayashi¹, Taisuke Sasaki¹, Yuya Sakuraba¹, Yukiko Takahashi¹, Kazuhiro Hono^1,2 (1.NIMS, 2.Univ. Tsukuba)

2:15 PM - 2:30 PM

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn₃Ge top electrode

〇Atsushi Sugihara¹, Kazuya Suzuki¹, Terunobu Miyazaki¹, Shigemi Mizukami¹ (1.WPI-AIMR, Tohoku Univ.)

2:30 PM - 2:45 PM

▲ [14p-2J-4] Fabrication of Magnetic Tunnel Junctions with superparamagnetic CoFeB free layer

〇Kyohei Ishikawa¹, Oogane Mikihiko¹, Fujiwara Kosuke¹, Naganuma Hiroshi¹, Ando Yasuo¹ (1.Tohoku Univ.)

Sessions

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [14a-2J-1] Voltage-induced magnetic anisotropy change in Fe|MgO tunnel junctions investigated by x-ray absorption spectroscopy

▼ [14a-2J-2] Voltage-induced magnetic anisotropy change in FePt|MgO tunnel junctions investigated by x-ray magnetic circular dichroism spectroscopy

▲ [14a-2J-3] Effects of Chemical States at Interface on Electric Field Effects of CoFeB/MO_x stacks

▼ [14a-2J-4] CoFeB thickness dependence of electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO structures

▲ [14a-2J-5] Evaluation of write error rate for voltage-induced dynamic switching in perpendicularly magnetized magnetic tunnel juncitons

▲ [14a-2J-6] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions

▲ [14a-2J-7] Voltage-induced magnetic anisotropy change of Fe-4f-metal alloys

▼ [14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical current
in CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

▲ [14a-2J-9] Evaluation of non-linear parameter on spin torque oscillator

▲ [14a-2J-10] Effects of Power Fluctuation on High-Signal-Transfer-Rate Read Heads Using Spin-Torque Oscillators: Study based on a Non-Linear Oscillator Model

▲ [14a-2J-11] High-Power Spin-Torque Oscillator with Dual Free Layers of CoFeB and Synthetic Ferrimagnet

▲ [14a-2J-12] Investigation of the emission power and Q factor of the MgO-based spin-torque oscillators with different diameters

[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co₂MnSi MTJs with high spin polarization

▼ [14p-2J-2] CPP-GMR devices using Co₂Fe(Ga_0.5Ge_0.5) full Heusler alloy and a AgZn alloy spacer

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn₃Ge top electrode

▲ [14p-2J-4] Fabrication of Magnetic Tunnel Junctions with superparamagnetic CoFeB free layer

Authentication

Sessions

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [14a-2J-1] Voltage-induced magnetic anisotropy change in Fe|MgO tunnel junctions investigated by x-ray absorption spectroscopy

▼ [14a-2J-2] Voltage-induced magnetic anisotropy change in FePt|MgO tunnel junctions investigated by x-ray magnetic circular dichroism spectroscopy

▲ [14a-2J-3] Effects of Chemical States at Interface on Electric Field Effects of CoFeB/MOx stacks

▼ [14a-2J-4] CoFeB thickness dependence of electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO structures

▲ [14a-2J-5] Evaluation of write error rate for voltage-induced dynamic switching in perpendicularly magnetized magnetic tunnel juncitons

▲ [14a-2J-6] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions

▲ [14a-2J-7] Voltage-induced magnetic anisotropy change of Fe-4f-metal alloys

▼ [14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical currentin CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

▲ [14a-2J-9] Evaluation of non-linear parameter on spin torque oscillator

▲ [14a-2J-10] Effects of Power Fluctuation on High-Signal-Transfer-Rate Read Heads Using Spin-Torque Oscillators: Study based on a Non-Linear Oscillator Model

▲ [14a-2J-11] High-Power Spin-Torque Oscillator with Dual Free Layers of CoFeB and Synthetic Ferrimagnet

▲ [14a-2J-12] Investigation of the emission power and Q factor of the MgO-based spin-torque oscillators with different diameters

[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co2MnSi MTJs with high spin polarization

▼ [14p-2J-2] CPP-GMR devices using Co2Fe(Ga0.5Ge0.5) full Heusler alloy and a AgZn alloy spacer

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn3Ge top electrode

▲ [14p-2J-4] Fabrication of Magnetic Tunnel Junctions with superparamagnetic CoFeB free layer

Authentication

▲ [14a-2J-3] Effects of Chemical States at Interface on Electric Field Effects of CoFeB/MO_x stacks

▼ [14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical current
in CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co₂MnSi MTJs with high spin polarization

▼ [14p-2J-2] CPP-GMR devices using Co₂Fe(Ga_0.5Ge_0.5) full Heusler alloy and a AgZn alloy spacer

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn₃Ge top electrode