Session information

〇Takashi Matsukawa¹, Koichi Fukuda¹, Yongxun Liu¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Kazuhiko Endo¹, Shin-ichi O'uchi¹, Shinji Migita¹, Wataru Mizubayashi¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (1.AIST)

3:30 PM - 4:00 PM

[11p-B5-6] AC performance improvement by RMG module for 14nm FinFETs and beyond

〇Mitsuhiro Togo¹, M. Joshi¹, H. V. Meer¹, C. Yong¹, B. Liu¹, X. He¹, X. Wu¹, S. Y. Mun¹, X. Zhang¹, D. Konduparthi¹, J. Lian¹, G. Bohra¹, W. H. Tong¹, C. Y. Xiao¹, D. Triyoso¹, E. Banghart¹, S. M. Pandey¹, A. Wei¹, R. Pal¹, R. Carter¹, M. H. Nam¹, M. Eller¹, S. Samavedam¹ (1.GLOBALFOUNDRIES)

4:00 PM - 4:30 PM

[11p-B5-7] Systematic Understanding of Variability, Current Noise, and Threshold Voltage Shift in Silicon Tri-gate Nanowire Transistors

〇Masumi Saitoh¹, Kensuke Ota¹, Chika Tanaka¹, Daisuke Matsushita¹, Toshinori Numata¹ (1.Toshiba Corp.)

4:30 PM - 5:00 PM

[11p-B5-8] High-k Metal Gate Process Technology and Challenges for 10 nm and Beyond

〇Naomi Yoshida¹, Adam Brand¹ (1.Applied Materials)

5:00 PM - 5:30 PM

[11p-B5-9] Passivation Schemes for Ge High-K Metal Gate MOSFETs on Si for VLSI Production

〇Genji Nakamura¹, Kandabara Tapily², Robert Clark², David O'Meara², Steve Consiglio², Richard Gaylord², Cory Wajda², Gert Leusink², Tat Ngai³, Dmitry Veksler³, Chris Hobbs³, Ken Matthews³, David Gilmer³, Paul Kirsch³ (1.Tokyo Electron Limited, 2.TEL Technology Center, America, LLC, 3.SEMATECH)

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