Oral presentation

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 18, 2019 9:00 AM - 12:15 PM E303 (E303)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[18a-E303-1] Temperature Influence on Adsorption and Desorption of Organic Molecules in Two Component System on Silicon Surface

Kenta Hori¹, 〇Tomohiko Kanai¹, Hitoshi Habuka¹ (1.Yokohama National Univ.)

9:15 AM - 9:30 AM

[18a-E303-2] Design and Verification of Water Flow in Batch-Type Silicon Wafer Wet Cleaner

〇Toshinori Takahashi¹, Miya Matsuo¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

9:30 AM - 9:45 AM

[18a-E303-3] Effects of skin layer on friction of PVA brushes

〇Keishi Yamada¹, Toshiyuki Sanada¹, Yuki Mizushima¹, Akira Fukunaga², Hirokuni Hiyama² (1.Shizuoka Univ., 2.Ebara Corp.)

9:45 AM - 10:00 AM

[18a-E303-4] Chemical etching of silicon assisted by graphene oxide in HF-HNO₃

〇Wataru Kubota¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

△ [18a-E303-5] Control of the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

〇Sou Takeuchi¹, Daisuke Ohori¹, Teruhisa Ishida², Mami Tanaka², Masahiro Soda², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.NAGASE & CO., LTD., 3.AIMR, Tohoku Univ.)

10:15 AM - 10:30 AM

[18a-E303-6] A study on mechanisms of laser THz emission at MOS interface
- Separation of the surface electric field and the photo-Dember effect -

〇Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1.SCREEN, 2.ILE, Osaka Univ., 3.Graduate School of Eng., Osaka Univ.)

10:45 AM - 11:00 AM

[18a-E303-7] Evaluation of metal contamination in SiO2 by Pulse Photoconductivity Method

〇Hiroki Obana¹, Narumi Abe¹, Yuki Kumagae¹, Takuma Yamashita¹, Ryo Ogasawara², Tatsuki Hamada², Ryo Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

11:00 AM - 11:15 AM

[18a-E303-8] Throughput improvement of Non-Destructive Surface States Density Measurement
by Pulse Photoconductivity Method

〇Narumi Abe¹, Yuuki Kumagae¹, Hiroki Obana¹, Takuma Yamashita¹, Ryou Ogasawara², tatuki Hamada², Ryou Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

11:15 AM - 11:30 AM

[18a-E303-9] Accuracy improvement of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Takuma Yamashita¹, Narumi Abe¹, Yuki Kumagae¹, Hiroki Obana¹, Ryo Ogasawara², Tatsuki Hamada², Ryo Yoshii², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ, 2.Kumamoto Univ)

11:30 AM - 11:45 AM

△ [18a-E303-10] A study on non-uniform interface state imaging of SiO₂/Si using scanning nonlinear dielectric microscopy

〇(B)Koharu Suzuki¹, Yamasue Kohei¹, Cho Yasuo¹ (1.Tohoku Univ.)

11:45 AM - 12:00 PM

△ [18a-E303-11] Chemical bond state evaluation at buried interface by laboratory HAXPES method

〇Tappei Nishihara¹, Hiroki Kanai¹, Ryo Yokogawa^1,2, Ichiro Hirosawa³, Satoshi Yasuno³, Toshiro Okawa⁴, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.JASRI, 4.Scienta Omicron)

12:00 PM - 12:15 PM

[18a-E303-12] Evaluation of Complex Dielectric Function of Si-based Materials from Energy Loss Signals for Photoelectrons

〇Akio Ohta¹, Noriyuki Taoka¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Oral presentation

[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 18, 2019 1:45 PM - 4:45 PM E303 (E303)

Nobuya Mori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

△ [18p-E303-1] Theoretical analysis of classical Hall mobility in two-dimensional systems by non-equilibrium Green's function method

〇Hajime Tanaka^1,2, Nobuya Mori¹ (1.Osaka Univ., 2.Kyoto Univ.)

2:00 PM - 2:15 PM

[18p-E303-2] A Study of Carrier Mobility Model in Drift-Diffusion Simulations under Discrete Impurities

〇Kohei Tsukahara¹, Katsuhisa Yoshida¹, Nobuyuki Sano¹ (1.Inst. of Appl. Phys., Univ. of Tsukuba)

2:15 PM - 2:30 PM

△ [18p-E303-3] NEGF analysis of band-to-band tunneling in van der Waals heterojunction

〇(D)Futo Hashimoto¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[18p-E303-4] Monte Carlo Simulations of Single-Layer MoS₂ under 3D Device Structures

〇(M2)Shuta Okada¹, Katsuhisa Yoshida¹, Nobuyuki Sano¹ (1.Univ. of Tsukuba)

2:45 PM - 3:00 PM

[18p-E303-5] A study on the application of machine learning for nanoscale device simulation

〇SATOFUMI SOUMA¹, KOKI ARIHORI¹, DAISUKE MAKI¹, MATSUTO OGAWA¹ (1.Kobe Univ.)

3:00 PM - 3:15 PM

△ [18p-E303-6] Modeling of electron transmission process in the channel of nanoscale device under random impurity fluctuation with machine learning

〇(B)Ryuho Nakaya¹, Koudai Hirata¹, Souma Kawahara¹, Tota Suko², Masakazu Muraguchi¹ (1.Hokkaido Univ. of Science, 2.Waseda Univ.)

3:30 PM - 3:45 PM

[18p-E303-7] Simulation analysis of avalanche multiplication phenomenon in photodiodes

〇(M1)Taishi Yakabe¹, Yoshinari Kamakura², Nobuya Mori¹ (1.Osaka Univ., 2.Osaka Inst. Technol.)

3:45 PM - 4:00 PM

△ [18p-E303-8] Development of MOSFET model under TID effect

〇Yuta Oshima¹, Motoki Ando¹, Ryoichiro Yoshida¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

▼ [18p-E303-9] Simulated Phonon Lifetimes of Defect Bulk Silicon

〇(D)Sylvia YukYee Chung¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)

4:15 PM - 4:30 PM

[18p-E303-10] TCAD Simulation of Phonon Thermal Transport in MOSFETs on the Basis of Boltzmann Equation

〇Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹ (1.AIST)

4:30 PM - 4:45 PM

[18p-E303-11] Temperature control of clean room by dynamic simulation and virtual metrology

〇Yuuki Kumagae¹, Narumi Abe¹, Hiroki Obana¹, Ryo Ogasawara², Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

Poster presentation

[20a-PB3-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 20, 2019 9:30 AM - 11:30 AM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[20a-PB3-1] Cellular Automaton Simulation of Electron Transport in HEMT

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kozo Makiyama², Junji Kotani² (1.AIST, 2.Fujitsu Lab.)

9:30 AM - 11:30 AM

[20a-PB3-2] Suppression of Carrier Recombination at Crystalline Si Surfaces by Formation of Nanocrystalline Si layer/Si Structure

〇Yuya Onitsuka^1,2, Kentaro Imamura¹, Kobayashi Hikaru¹ (1.ISIR, Osaka Univ., 2.JSPS Research Ferrow)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1] Temperature Influence on Adsorption and Desorption of Organic Molecules in Two Component System on Silicon Surface

[18a-E303-2] Design and Verification of Water Flow in Batch-Type Silicon Wafer Wet Cleaner

[18a-E303-3] Effects of skin layer on friction of PVA brushes

[18a-E303-4] Chemical etching of silicon assisted by graphene oxide in HF-HNO₃

△ [18a-E303-5] Control of the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

[18a-E303-6] A study on mechanisms of laser THz emission at MOS interface
- Separation of the surface electric field and the photo-Dember effect -

[18a-E303-7] Evaluation of metal contamination in SiO2 by Pulse Photoconductivity Method

[18a-E303-8] Throughput improvement of Non-Destructive Surface States Density Measurement
by Pulse Photoconductivity Method

[18a-E303-9] Accuracy improvement of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

△ [18a-E303-10] A study on non-uniform interface state imaging of SiO₂/Si using scanning nonlinear dielectric microscopy

△ [18a-E303-11] Chemical bond state evaluation at buried interface by laboratory HAXPES method

[18a-E303-12] Evaluation of Complex Dielectric Function of Si-based Materials from Energy Loss Signals for Photoelectrons

[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18p-E303-1] Theoretical analysis of classical Hall mobility in two-dimensional systems by non-equilibrium Green's function method

[18p-E303-2] A Study of Carrier Mobility Model in Drift-Diffusion Simulations under Discrete Impurities

△ [18p-E303-3] NEGF analysis of band-to-band tunneling in van der Waals heterojunction

[18p-E303-4] Monte Carlo Simulations of Single-Layer MoS₂ under 3D Device Structures

[18p-E303-5] A study on the application of machine learning for nanoscale device simulation

△ [18p-E303-6] Modeling of electron transmission process in the channel of nanoscale device under random impurity fluctuation with machine learning

[18p-E303-7] Simulation analysis of avalanche multiplication phenomenon in photodiodes

△ [18p-E303-8] Development of MOSFET model under TID effect

▼ [18p-E303-9] Simulated Phonon Lifetimes of Defect Bulk Silicon

[18p-E303-10] TCAD Simulation of Phonon Thermal Transport in MOSFETs on the Basis of Boltzmann Equation

[18p-E303-11] Temperature control of clean room by dynamic simulation and virtual metrology

[20a-PB3-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-PB3-1] Cellular Automaton Simulation of Electron Transport in HEMT

[20a-PB3-2] Suppression of Carrier Recombination at Crystalline Si Surfaces by Formation of Nanocrystalline Si layer/Si Structure

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18a-E303-5] Control of the Water-repellent of Defect-free and Ordered Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

△ [18a-E303-10] A study on non-uniform interface state imaging of SiO2/Si using scanning nonlinear dielectric microscopy

△ [18a-E303-11] Chemical bond state evaluation at buried interface by laboratory HAXPES method

[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [18p-E303-1] Theoretical analysis of classical Hall mobility in two-dimensional systems by non-equilibrium Green's function method

△ [18p-E303-3] NEGF analysis of band-to-band tunneling in van der Waals heterojunction

△ [18p-E303-6] Modeling of electron transmission process in the channel of nanoscale device under random impurity fluctuation with machine learning

△ [18p-E303-8] Development of MOSFET model under TID effect

▼ [18p-E303-9] Simulated Phonon Lifetimes of Defect Bulk Silicon

[20a-PB3-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Authentication

△ [18a-E303-10] A study on non-uniform interface state imaging of SiO₂/Si using scanning nonlinear dielectric microscopy