Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PA3 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[12a-PA3-1] ZnO crystals grown by mist chemical vapor deposition technique on a sapphire substrate with thin metal layer

Taiki Kimura¹, Kosei Ohashi¹, Kenya Fujiwara¹, Mikihiro Yamamoto¹, Kazuhiko Hara¹, 〇Tetsuya Kouno¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

△ [12a-PA3-2] Influence of H2O on ZnO Thin Film Fabrication by Mist CVD

Phimolphan Rutthongjan¹, 〇Misaki Nishi¹, Toshiyuki Kawaharamura¹, Masahito Sakamoto¹, Li Liu¹, Shota Sato¹, Mariko Ueda¹, Tatuya Yasuoka¹, Ryo Hasegawa¹, Tamako Ozaki¹, Dang T.Gian¹ (1.Kochi Univ. Tech.)

9:30 AM - 11:30 AM

▲ [12a-PA3-3] Epitaxial growth of β-Bi₂O₃ thin films with mist CVD

〇(D)Zaichun Sun¹, Daichi Oka¹, Tomoteru Fukumura^1,2,3 (1.Dept. Chem., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Core Research Cluster, Tohoku Univ.)

9:30 AM - 11:30 AM

[12a-PA3-4] Characterization of amorphous Al₂O₃ thin films prepared by mist-CVD

〇(M1)Kazuki Nishimura¹, Koshi Nishiyama¹, Yuki Fujimoto², Zenji Yatabe³, Yusui Nakamura^4,5 (1.GSST, Kumamoto Univ., 2.Sch. of Eng., Kumamoto Univ., 3.POIE, Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Kumamoto Phoenics)

9:30 AM - 11:30 AM

[12a-PA3-5] Growth of β-Ga₂(O_1-xS_x)₃ Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

〇Tubasa Hiroe¹, Moe Nagano¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Motohisa Kado², Kunio Ichino¹ (1.Tottori Univ., 2.Toyota Motor Corp.)

9:30 AM - 11:30 AM

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni_1-XMg_XO Thin Films on c-plane Al₂O₃ Substrates by Mist Chemical Vapor Deposition Method

〇Satoshi Yoneya¹, Takumi Ikenoue², Masao Miyake², Tetsuji Hirato² (1.Faculty of Eng., Kyoto Univ., 2.Graduate School of Energy Sci., Kyoto Univ.)

9:30 AM - 11:30 AM

[12a-PA3-7] Influence of Material Solvents on Thin Film Fabrication by Mist CVD

〇Masahito Sakamoto¹, Tatsuya Yasuoka¹, Misaki Nishi¹, Li Liu¹, Phimolphan Rutthongjan¹, Shota Sato¹, Mariko Ueta¹, Yuki Tagashira¹, Ryo Hasegawa¹, Tamako Ozaki¹, Giang T. Dang¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

9:30 AM - 11:30 AM

[12a-PA3-8] NO gas doping to ZnO films in a catalytic reaction assisted chemical vapor deposition

Ryuta Iba¹, Yuki Adachi¹, Abdul Manaf², 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol., 2.MJIIT)

9:30 AM - 11:30 AM

[12a-PA3-9] Investigation of interfacial electronic states in annealed Ag/ZnO junctions

〇Yoshihito Yamagata^1,2, Takeo Ohsawa¹, Takumi Hosaka^1,2, Herve Montigaud³, Takamasa Ishigaki², Naoki Ohashi¹ (1.NIMS, 2.Hosei Univ., 3.Saint-Gobain Recherche)

9:30 AM - 11:30 AM

[12a-PA3-10] Fabrications of NiCdO thin films by sol-gel dip method

〇Takashi Yasuda¹, Yasuaki Yamada¹, Rui Umetsu¹ (1.ISU)

9:30 AM - 11:30 AM

[12a-PA3-11] Evaluation of luminescence properties in hydrothermally synthesized ZnO nanorods

〇Sosuke Masuzawa¹, Norihiko Kamata¹, Zentaro Honda¹ (1.Saitama Univ.)

9:30 AM - 11:30 AM

[12a-PA3-12] First principles study on the atomic and electronic structures of complex defects in the Ga₂O₃

〇(D)Kenta Chokawa¹, Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

9:30 AM - 11:30 AM

[12a-PA3-13] Deep-Level Defect Investigation of Si-Doped β-Ga₂O₃ Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy

〇Yoshitaka Nakano¹, Akira Toyotome¹ (1.Chubu Univ.)

9:30 AM - 11:30 AM

[12a-PA3-14] Mechanical milling processing on β-Ga₂O₃ powder

〇Hiroaki Kishimura¹, Ryu Deguchi¹, Matsumoto Hitoshi¹ (1.NDA)

9:30 AM - 11:30 AM

[12a-PA3-15] Electronic band structures of α-Ir₂O₃

〇Yuichi Ota¹ (1.TIRI)

9:30 AM - 11:30 AM

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

〇(DC)Puneet Jain¹, Ken-ichi Haga¹, Eisuke Tokumitsu¹ (1.JAIST)

9:30 AM - 11:30 AM

[12a-PA3-17] Analysis of Schottky diode properties in In-Ga-Zn-O/Ag_xO hetro interface using device simulation

〇(M2)Kenichiro Hamada¹, Yusaku Magari¹, Daichi Koretomo¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ of Tech, 2.Resarch Institute, KUT)

9:30 AM - 11:30 AM

△ [12a-PA3-18] Protection on interfacial reaction in InGaZnO/Ionic liquid with self-assembled monolayer

〇Shoma Ishida¹, Mami Fujii², Yang Liu², Hirohisa Yamada¹, Yasuaki Ishikawa², Naoyuki Fujita¹, Yukiharu Uraoka² (1.Nara Inst., 2.NAIST)

9:30 AM - 11:30 AM

[12a-PA3-19] Ga Amount Dependence of Electrical Properties for ZnO Based Conductive Films

〇Yumika Yamada¹, Rei Sugiura², Kuniki Matsubara², Yuto Ban², Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane Univ., Nat. Sci. Technol., 2.Shimane Univ., Sci. Eng.)

9:30 AM - 11:30 AM

[12a-PA3-20] Effect of annealing gas in Ga thermal diffusion for reduced resistive ZnO nanoparticle layers

〇Toshiyuki Yoshida¹, Maruful Islam Md², Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&Technol, 2.Shimane Univ. Sci.&Eng.)

9:30 AM - 11:30 AM

[12a-PA3-21] Evaluation of electrical properties of ITO thin film formed by PLD method by annealing process

〇Syogo Iwana¹, Sujun Guan¹, Syuji Komuro², Xinwei Zhao¹ (1.Tokyo Univ of Sci, 2.Toyo Univ)

9:30 AM - 11:30 AM

[12a-PA3-22] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (3)

〇Tsutomu Muranaka¹, Hirotoshi Ono¹, Yoshifumi Terada¹, Sanshiro Watanabe¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al₂O₃Substrates with α-Fe₂O₃ Buffer Layers.

〇Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[12a-PA3-24] Growth of ZnO nanorods by chemical bath deposition and their inorganic-organic hybrid heterojunctions with PEDOT:PSS (II)

Shohei Obara¹, Suguru Namba², Naoto Hashikuni², 〇Tomoaki Terasako¹, Akira Miyata², Masakazu Yagi³, Junichi Nomoto⁴, Tetsuya Yamamoto⁴ (1.Grad. School Sci. Eng., Ehime Univ., 2.Fac. Eng., Ehime Univ., 3.Natl. Inst. Technol., Kagawa Coll., 4.Research Inst., Kochi Univ. Technol.)

9:30 AM - 11:30 AM

△ [12a-PA3-25] Correlation between Hole Generation and Local Structure in Wide-gap P-type Tin Niobate

〇(DC)Akane Samizo^1,2, Naoto Kikuchi¹, Yoshihiro Aiura¹, Keishi Nishio² (1.AIST, 2.Tokyo Univ. of Sci.)

9:30 AM - 11:30 AM

[12a-PA3-26] Dye removal properties of Zn-Al layered double hydroxide

Yuki Nanya¹, 〇Koji Abe¹ (1.Nagoya Inst. Tech.)

Session information

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-1] ZnO crystals grown by mist chemical vapor deposition technique on a sapphire substrate with thin metal layer

△ [12a-PA3-2] Influence of H2O on ZnO Thin Film Fabrication by Mist CVD

▲ [12a-PA3-3] Epitaxial growth of β-Bi₂O₃ thin films with mist CVD

[12a-PA3-4] Characterization of amorphous Al₂O₃ thin films prepared by mist-CVD

[12a-PA3-5] Growth of β-Ga₂(O_1-xS_x)₃ Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni_1-XMg_XO Thin Films on c-plane Al₂O₃ Substrates by Mist Chemical Vapor Deposition Method

[12a-PA3-7] Influence of Material Solvents on Thin Film Fabrication by Mist CVD

[12a-PA3-8] NO gas doping to ZnO films in a catalytic reaction assisted chemical vapor deposition

[12a-PA3-9] Investigation of interfacial electronic states in annealed Ag/ZnO junctions

[12a-PA3-10] Fabrications of NiCdO thin films by sol-gel dip method

[12a-PA3-11] Evaluation of luminescence properties in hydrothermally synthesized ZnO nanorods

[12a-PA3-12] First principles study on the atomic and electronic structures of complex defects in the Ga₂O₃

[12a-PA3-13] Deep-Level Defect Investigation of Si-Doped β-Ga₂O₃ Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy

[12a-PA3-14] Mechanical milling processing on β-Ga₂O₃ powder

[12a-PA3-15] Electronic band structures of α-Ir₂O₃

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

[12a-PA3-17] Analysis of Schottky diode properties in In-Ga-Zn-O/Ag_xO hetro interface using device simulation

△ [12a-PA3-18] Protection on interfacial reaction in InGaZnO/Ionic liquid with self-assembled monolayer

[12a-PA3-19] Ga Amount Dependence of Electrical Properties for ZnO Based Conductive Films

[12a-PA3-20] Effect of annealing gas in Ga thermal diffusion for reduced resistive ZnO nanoparticle layers

[12a-PA3-21] Evaluation of electrical properties of ITO thin film formed by PLD method by annealing process

[12a-PA3-22] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (3)

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al₂O₃Substrates with α-Fe₂O₃ Buffer Layers.

[12a-PA3-24] Growth of ZnO nanorods by chemical bath deposition and their inorganic-organic hybrid heterojunctions with PEDOT:PSS (II)

△ [12a-PA3-25] Correlation between Hole Generation and Local Structure in Wide-gap P-type Tin Niobate

[12a-PA3-26] Dye removal properties of Zn-Al layered double hydroxide

Authentication

Session information

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12a-PA3-2] Influence of H2O on ZnO Thin Film Fabrication by Mist CVD

▲ [12a-PA3-3] Epitaxial growth of β-Bi2O3 thin films with mist CVD

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni1-XMgXO Thin Films on c-plane Al2O3 Substrates by Mist Chemical Vapor Deposition Method

▲ [12a-PA3-16] Electrical Properties of In2O3 and ITO Thin Films Prepared by Solution Processusing In(acac)3 Precursor

△ [12a-PA3-18] Protection on interfacial reaction in InGaZnO/Ionic liquid with self-assembled monolayer

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al2O3 Substrates with α-Fe2O3 Buffer Layers.

△ [12a-PA3-25] Correlation between Hole Generation and Local Structure in Wide-gap P-type Tin Niobate

Authentication

▲ [12a-PA3-3] Epitaxial growth of β-Bi₂O₃ thin films with mist CVD

△ [12a-PA3-6] Epitaxial Growth and Bandgap Control of Ni_1-XMg_XO Thin Films on c-plane Al₂O₃ Substrates by Mist Chemical Vapor Deposition Method

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

△ [12a-PA3-23] Growth and Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Tin Films on r-plane α-Al₂O₃Substrates with α-Fe₂O₃ Buffer Layers.