Session information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9p-M114-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sat. Mar 9, 2019 1:15 PM - 3:45 PM M114 (H114)

Yasuo Cho(Tohoku Univ.), Wenchang Yeh(Shimane Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[9p-M114-1] SiC Nano-Dot Formation in Bulk-Si using Hot C⁺ Ion Implantation (Ⅳ): Surface Orientation Dependency

〇Masaki Yamamoto¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

1:30 PM - 1:45 PM

[9p-M114-2] SiC Nano-Dot Formation in Poly-Si and Amorphous-Si Substrates
using Hot C⁺ Ion Implantation (Ⅱ) : C⁺Dose Dependency

〇Rikito Kanazawa¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

1:45 PM - 2:00 PM

[9p-M114-3] Highly activated junctions using Flash Lamp Annealing tool with sub-milliseconds shorter pulses

Akitsugu Ueda¹, 〇Hideaki Tanimura¹, Hikaru Kawarazaki¹, Takahiro Yamada¹, Kazuhiko Fuse¹, Takayuki Aoyama¹, Shinichi Kato¹, Yasuhide Nozaki¹ (1.SCREEN Semiconductor Solutions)

2:00 PM - 2:15 PM

[9p-M114-4] Impurity Doping with High Concentration Using Flash Lamp Annealing and Sol-Gel Coating (SGC)

〇Hideaki Tanimura¹, Kazuhiko Fuse¹, Takayuki Aoyama¹, Shinichi Kato¹, Yasuhide Nozaki¹ (1.SCREEN Semiconductor Solutions)

2:15 PM - 2:30 PM

[9p-M114-5] Carrier Distribution Imaging Using Higher-Harmonic ∂C/∂z-SNDM Signals

〇Yoshiomi Hiranaga¹, Yasuo Cho¹ (1.RIEC, Tohoku Univ.)

2:30 PM - 2:45 PM

[9p-M114-6] Four terminal Cu-MIC poly-Ge_xSn_1-x TFTs with high-k gate dielectric

〇Ryo Miyazaki¹, Hiroki Utumi¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

2:45 PM - 3:00 PM

[9p-M114-7] Transfer Time Shortening on Low temperature Meniscus Force Mediated Layer Transfer

〇(B)Ryuji Kawakita¹, Tomotaka Hirano¹, Hiroaki Hanahusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ)

3:00 PM - 3:15 PM

[9p-M114-8] Development of Low Temperature process Technology for Floating Gate Memory Device Fabrication on Plastic Substrate

〇(M2)Fumiyasu Kondo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter,Hiroshima Univ)

3:15 PM - 3:30 PM

△ [9p-M114-9] Filter less spectroscopic method using transient response of PD

〇Nobuhiro Watanabe¹, Toshihiko Noda², Kazuaki Sawada², Masahiro Akiyama¹ (1.National Institute of Technology, Nagano College, 2.Toyohashi University of Technology)

3:30 PM - 3:45 PM

[9p-M114-10] Stress Evaluation of Plasma CVD Deposited SiN and a-C Films using Raman Spectroscopy

〇Masato Koharada¹, Ryo Yokogawa^1,2, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow DC)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the back of the name badge.
The password will be sent to all JSAP members in September 2019

Please log in with your participant account.
» Participant Log In

▲