Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sat. Mar 14, 2020 1:45 PM - 5:30 PM A305 (6-305)

Hiroshi Ikenoue(Kyushu Univ.), Masato Sone(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-A305-1] [Young Scientist Presentation Award Speech] Dependence of chlorine adsorption layer on ion energy on Ar ion-irradiated GaN surface (2)

〇Masaki Hasegawa¹, Takayoshi Tsutsumi¹, Atsushi Tanide^1,2, Hiroki Kondo¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

2:00 PM - 2:15 PM

▲ [14p-A305-2] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain

〇RengieMark Domincel Mailig¹, Yuichiro Aruga¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

2:15 PM - 2:30 PM

△ [14p-A305-3] Conversion of Liquid Si to Solid State by Electron Beam Irradiation

〇Masahiro Mori¹, Masahiko Tomitori¹, Takashi Masuda¹ (1.JAIST)

2:30 PM - 2:45 PM

△ [14p-A305-4] On-site Si₂H₆ gas generation from solid Si by hydrogen plasma

〇(M2)Keiichi Hamanaka¹, Taniguchi Daisuke¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

△ [14p-A305-5] Reduction of metal/n-Ge contact resistivity by epitaxial HfGe₂ formation

〇Kazuki Senga¹, Shigehisa Shibayama¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

3:00 PM - 3:15 PM

▲ [14p-A305-6] Comparison of Single-implanted and Co-implanted NP Junction in Laser Annealed Germanium

〇SitiRahmah Aid^1,2, NurNadhirah MohamadRashid¹, UmarAbdul Aziz¹, NurfarhanaArissa Jonny¹, Hiroshi Ikenoue², Anthony Centeno³ (1.UTM, 2.Kyushu Univ., 3.XJTLU)

3:15 PM - 3:30 PM

△ [14p-A305-7] Elucidation of carrier mobility improvement mechanism in solid-phase-crystallized Ge thin films with controlling heat-treatment process

〇Toshifumi Imajo^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

3:45 PM - 4:00 PM

[14p-A305-8] Development of non-destructive interface state density measurement technique by pulsed photoconductive method

〇Takuma Yamashita¹, Abe Narumi¹, Kumagae Yuki¹, Obana Hiroki¹, Hamada Tatsuki², Yoshii ryo², Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka masao² (1.Graduate school of science and technology Kumamoto Univ, 2.Kumamoto Univ)

4:00 PM - 4:15 PM

△ [14p-A305-9] Miniaturized Piezoelectric MEMS 2D mirror for Endoscope

〇Rintaro Shimada¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (1.University of Hyogo)

4:15 PM - 4:30 PM

[14p-A305-10] Characterization of Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO₃ Film under Random Oscillation

〇Shuichi Murakami¹, Takeshi Yoshimura², Yusuke Kanaoka¹, Kazuo Satoh¹, Kazuki Tsuda¹, Norifumi Fujimura² (1.ORIST, 2.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

△ [14p-A305-11] A Study on Single-Proof-Mass 3-axis MEMS Accelerometer
with Pillar-Shaped Electrodes

〇(M2)Ken Atsumi¹, Tatsuya Koga¹, Takashi Ichikawa¹, Daisuke Yamane¹, Shin-ichi Iida², Hiroyuki Ito¹, Noboru Ishihara¹, Katsuyuki Machida¹, Kazuya Masu¹ (1.Tokyo inst., 2.NTT-AT)

4:45 PM - 5:00 PM

△ [14p-A305-12] [Highlight]A Study on Uniform Axial Sensitivities for Single Au Proof-Mass 3-axis MEMS Accelerometer with Pillar-Shaped Electrodes

〇Takashi Ichikawa¹, Ken Atsumi¹, Tatsuya Koga¹, Daisuke Yamane¹, Shin-ichi Iida², Hiroyuki Ito¹, Noboru Ishihara¹, Katsuyuki Machida¹, Kazuya Masu¹ (1.Tokyo Tech., 2.NTT-AT)

5:00 PM - 5:15 PM

[14p-A305-13] Development of high temperature platinum microheater

〇Yurina Amamoto¹, Shunsuke Akasaka¹, Isaku Kanno² (1.ROHM, 2.Kobe Univ.)

5:15 PM - 5:30 PM

▼ [14p-A305-14] Relationship between Current Density, Crystal Grain Size, Composition and Hardness in Electrodeposited Ni-Co Alloys

〇(M1)Yiming Jiang¹, Yu-An Chien¹, Chun-Yi Chen¹, Tso-Fu Mark Chang¹, Masato Sone¹ (1.Tokyo Institute of Technology)

Session information

[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14p-A305-1] [Young Scientist Presentation Award Speech] Dependence of chlorine adsorption layer on ion energy on Ar ion-irradiated GaN surface (2)

▲ [14p-A305-2] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain

△ [14p-A305-3] Conversion of Liquid Si to Solid State by Electron Beam Irradiation

△ [14p-A305-4] On-site Si₂H₆ gas generation from solid Si by hydrogen plasma

△ [14p-A305-5] Reduction of metal/n-Ge contact resistivity by epitaxial HfGe₂ formation

▲ [14p-A305-6] Comparison of Single-implanted and Co-implanted NP Junction in Laser Annealed Germanium

△ [14p-A305-7] Elucidation of carrier mobility improvement mechanism in solid-phase-crystallized Ge thin films with controlling heat-treatment process

[14p-A305-8] Development of non-destructive interface state density measurement technique by pulsed photoconductive method

△ [14p-A305-9] Miniaturized Piezoelectric MEMS 2D mirror for Endoscope

[14p-A305-10] Characterization of Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO₃ Film under Random Oscillation

△ [14p-A305-11] A Study on Single-Proof-Mass 3-axis MEMS Accelerometer
with Pillar-Shaped Electrodes

△ [14p-A305-12] [Highlight]A Study on Uniform Axial Sensitivities for Single Au Proof-Mass 3-axis MEMS Accelerometer with Pillar-Shaped Electrodes

[14p-A305-13] Development of high temperature platinum microheater

▼ [14p-A305-14] Relationship between Current Density, Crystal Grain Size, Composition and Hardness in Electrodeposited Ni-Co Alloys

Authentication

Session information

[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14p-A305-1] [Young Scientist Presentation Award Speech] Dependence of chlorine adsorption layer on ion energy on Ar ion-irradiated GaN surface (2)

▲ [14p-A305-2] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain

△ [14p-A305-3] Conversion of Liquid Si to Solid State by Electron Beam Irradiation

△ [14p-A305-4] On-site Si2H6 gas generation from solid Si by hydrogen plasma

△ [14p-A305-5] Reduction of metal/n-Ge contact resistivity by epitaxial HfGe2 formation

▲ [14p-A305-6] Comparison of Single-implanted and Co-implanted NP Junction in Laser Annealed Germanium

△ [14p-A305-7] Elucidation of carrier mobility improvement mechanism in solid-phase-crystallized Ge thin films with controlling heat-treatment process

[14p-A305-8] Development of non-destructive interface state density measurement technique by pulsed photoconductive method

△ [14p-A305-9] Miniaturized Piezoelectric MEMS 2D mirror for Endoscope

[14p-A305-10] Characterization of Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO3 Film under Random Oscillation

△ [14p-A305-11] A Study on Single-Proof-Mass 3-axis MEMS Accelerometerwith Pillar-Shaped Electrodes

△ [14p-A305-12] [Highlight]A Study on Uniform Axial Sensitivities for Single Au Proof-Mass 3-axis MEMS Accelerometer with Pillar-Shaped Electrodes

[14p-A305-13] Development of high temperature platinum microheater

▼ [14p-A305-14] Relationship between Current Density, Crystal Grain Size, Composition and Hardness in Electrodeposited Ni-Co Alloys

Authentication

△ [14p-A305-4] On-site Si₂H₆ gas generation from solid Si by hydrogen plasma

△ [14p-A305-5] Reduction of metal/n-Ge contact resistivity by epitaxial HfGe₂ formation

[14p-A305-10] Characterization of Piezoelectric MEMS Vibration Energy Harvesters using Lead-Free BiFeO₃ Film under Random Oscillation

△ [14p-A305-11] A Study on Single-Proof-Mass 3-axis MEMS Accelerometer
with Pillar-Shaped Electrodes