Session information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[10p-N202-1~19] 15.5 Group IV crystals and alloys

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N202 (Oral)

Masashi Kurosawa(Nagoya Univ.), Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N202-1] Rapid trench-filling growth of Ge epitaxial layer on Si

Kazuki Motomura¹, 〇Kota Kato¹, Piedra-Lorenzana Jose A.¹, Bin Amin Mohd Faiz¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ., 2.SUMCO Corporation)

1:45 PM - 2:00 PM

▲ [10p-N202-2] Ge epitaxial layer with a low dislocation density grown on arrayed SOI strips

〇(M1)FAIZ FAIZ MOHD¹, Kazuki Motomura¹, Takeshi Hizawa¹, Jose A. Piedra-Lorenzana¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ, 2.SUMCO Corporation)

2:00 PM - 2:15 PM

△ [10p-N202-3] Control of crack formation and propagation direction in strained SiGe/Ge(111)

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Rena Kanesawa¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

2:15 PM - 2:30 PM

▲ [10p-N202-4] Dopant Redistribution in High Temperature Grown Sb-doped Ge Epitaxial Films

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

2:30 PM - 2:45 PM

[10p-N202-5] Enhancement of RT EL emission intensity in Ge-on-Si (111) diodes by annealing

〇Yuwa Sugiura¹, Masashi Sasaki¹, Youya Wagatsuma¹, Koudai Yamada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ.)

2:45 PM - 3:00 PM

[10p-N202-6] Effects of i-Ge Thickness on Room-temperature Electroluminescence from Ge-on-Si(100) p-i-n Diodes

〇Masashi Sasaki¹, Yuwa Sugiura¹, Youya Wagatsuma¹, Sawano Kentaro¹, Kodai Yamada¹ (1.Tokyo City Univ.)

3:00 PM - 3:15 PM

△ [10p-N202-7] Determination of Strain-free Raman Shift from Relaxed GeSn Layer

〇(M2)Gai Ogasawara¹, Ryo Yokogawa^1,2, Kazutoshi Yoshioka¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

3:15 PM - 3:30 PM

△ [10p-N202-8] Band-Edge PL Emission from Unstrained GeSn (Sn 9%)

〇Cali Shizuru Matsunaga¹, Ryo Yokogawa^1,2, Yuta Satake¹, Gai Ogasawara¹, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6, Atsushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Shizuoka Univ., 4.RIE Shizuoka Univ., 5.imec, 6.K. U. Leuven)

3:30 PM - 3:45 PM

[10p-N202-9] Fabrication of strain-relaxed SiGe buffer layer on Si (111) and annealing effect

〇Kazuya Okada¹, Youya Wagatsuma¹, Kodai Yamada¹, Takahiro Inoue¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

3:45 PM - 4:00 PM

△ [10p-N202-10] Optical Properties of Bulk SiGe in the Near Infrared Evaluated by Spectroscopic Ellipsometry

〇Yuki Shibayama¹, Ryo Yokogawa^1,2, Yasutomo Arai³, Ichiro Yonenaga⁴, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.JAXA, 4.Tohoku Univ.)

4:15 PM - 4:30 PM

△ [10p-N202-11] Triaxial Strain Evaluation for Carbon-doped Silicon Nanowire using X-ray Reciprocal Space Mapping (II)

〇Kazutoshi Yoshioka¹, Gai Ogasawara¹, Kirito Cho¹, Yuta Ito¹, Sho Sugawa¹, Ichiro Hirosawa^2,3, Takeshi Watanabe⁴, Ryo Yokogawa^1,3, Atsushi Ogura^1,3 (1.Meiji Univ., 2.SAGA-LS, 3.MREL, 4.JASRI)

4:30 PM - 4:45 PM

[10p-N202-12] Resonance phenomena in uniaxial strained Ge microbridge structures

〇Takahiro Inoue¹, Youya Wagatsuma¹, Reo Ikegaya¹, Kazuya Okada¹, Kentarou Sawano¹ (1.Adv.Res.Lab., Tokyo City Univ)

4:45 PM - 5:00 PM

[10p-N202-13] Fabrication of strained Ge microbridge structures with meshed pads and luminescence properties

〇Reo Ikegaya¹, Takahiro Inoue¹, Masashi Sasaki¹, Youya Wgatsuma¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

5:00 PM - 5:15 PM

[10p-N202-14] Study on Correlation between Broad Peaks in Raman Spectra of Extremely Thin GOI Observed by Oil-Immersion Raman Spectroscopy and Strain States

〇Ryo Yokogawa^1,2, Chia-Tsong Chen³, Kasidit Toprasertpong³, Mitsuru Takenaka³, Shinichi Takagi³, Astushi Ogura^1,2 (1.Meiji Univ., 2.MREL, 3.Univ. of Tokyo)

5:15 PM - 5:30 PM

[10p-N202-15] Formation of calcium silicides on SOI substrates

〇(M2)Yoshitsune Ito¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:30 PM - 5:45 PM

[10p-N202-16] Solid phase crystallization of CaGe₂ layers on insulator

〇Ryo Oishi¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

5:45 PM - 6:00 PM

△ [10p-N202-17] High quality Ge on epitaxial Co₂FeSi for semiconductor based vertical spin devices

〇Atsuya Yamada¹, Michihiro Yamada^2,3, Shinya Yamada^3,1, Kentarou Sawano⁴, Kohei Hamaya^3,1 (1.Osaka Univ., 2.JST-PRESTO., 3.CSRN, Osaka Univ., 4.Tokyo City Univ.)

6:00 PM - 6:15 PM

[10p-N202-18] Impact of Substrate Heating on Surface Flattening and Ge Segregaion of Al/Ge(111)

〇Keigo Matsushita¹, Akio Ohta¹, Noriyuki Taoka¹, Shohei Hayashi², Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Toray Research Center Inc.)

6:15 PM - 6:30 PM

[10p-N202-19] Crystal structure evaluation of multilayered germanane flakes by transmission powder X-ray diffraction

〇Mai Itoh¹, Masaaki Araidai², Akio Ohta¹, Osamu Nakatsuka^1,2, Masashi Kurosawa¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

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