Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 6.1 & 13.3 & 13.5

[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N205 (Oral)

Hiroyuki Ota(AIST), Hiroshi Funakubo(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N205-1] [Highlight]Nondestructive analysis of ferroelectric Hf_0.5Zr_0.5O₂ capacitors by laser-based photoelectron emission microscopy

〇Hirokazu Fujiwara¹, Toshiyuki Taniuchi², Cedric Bareille², Masaharu Kobayashi³, Shik Shin^2,4 (1.ISSP, 2.MIRC, 3.d.lab, 4.The Univ. of Tokyo)

9:15 AM - 9:30 AM

[11a-N205-2] Investigation of suppression of SiO₂ interfacial layer formation during ferroelectric non-doped HfO₂ formation

〇Masakazu Tanuma¹, Joong-Won Shin¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

9:30 AM - 9:45 AM

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO₂

〇JoongWon Shin¹, Masakazu Tanuma¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

9:45 AM - 10:00 AM

△ [11a-N205-4] Fabrication of CeOx/ Hf-Zr-O Structures by Solution Process

〇(M2)Mizuki Saito¹, Mohit Mohit¹, Eisuke Tokumitsu¹ (1.JAIST)

10:00 AM - 10:15 AM

[11a-N205-5] Endurance Characteristics of Ferroelectric Hf_xZr_1-xO₂ Thin Film Treated by FLA

〇Kento Izumi¹, Yuto Ota¹, Hikaru Kawarazaki², Hideaki Tanimura², Shinichi Kato², Yasuo Nara¹ (1.Univ. of hyogo, 2.SCREEN semicon.)

10:15 AM - 10:30 AM

[11a-N205-6] Suppression of SiO₂ interfacial layer growth for TiN/Hf_xZr_1−xO₂/Si-MFS fabrication

〇(PC)Takashi Onaya^1,2,3, Toshihide Nabatame², Mari Inoue², Tomomi Sawada², Hiroyuki Ota¹, Yukinori Morita¹ (1.AIST, 2.NIMS, 3.JSPS Research Fellow PD)

10:45 AM - 11:00 AM

▼ [11a-N205-7] Antiferroelectric properties in ALD ZrO₂ ultra-thin films and their relations with the crystalline phases

〇(DC)Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

11:00 AM - 11:15 AM

[11a-N205-8] Low-Voltage Retention and Endurance Improvement of Ferroelectric Hf_xZr_1-xO₂ by Thickness Scaling

〇Kasidit Toprasertpong¹, Kento Tahara¹, Yukinobu Hikosaka², Ko Nakamura², Hitoshi Saito², Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.Fujitsu Semiconductor Memory Solution)

11:15 AM - 11:30 AM

▼ [11a-N205-9] Simulation Study on the Role of GIDL Current for Erase Operation in FeFETs

〇(M2)Xiaoran Mei¹, Fei Mo¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

11:30 AM - 11:45 AM

▲ [11a-N205-10] Role of GIDL Current for Efficient Erase Operation and Interfacial Layer Engineering for Low-Voltage Operation in HfO₂-based FeFET

Fei Mo¹, Jiawen Xiang¹, Xiaoran Mei¹, Yoshiki Sawabe¹, Takuya Saraya¹, Toshiro Hiramoto¹, Chun-Jung Su², Vita Pi-Ho Hu³, 〇Masaharu Kobayashi^1,4 (1.IIS, Univ. Tokyo, 2.TSRI, 3.Nat. Taiwan Univ., 4.d.lab, Univ. Tokyo)

11:45 AM - 12:00 PM

▼ [11a-N205-11] Monolithic Integration of FET and Ferroelectric-Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application

〇(P)Jixuan Wu¹, Fei Mo¹, Takuya Saraya¹, Toshiro Hiramoto¹, Mototaka Ochi², Hiroshi Goto³, Masaharu Kobayashi^1,4 (1.IIS, Univ. of Tokyo, 2.Kobe Steel, Ltd, 3.Kobelco Inst., Inc, 4.d.lab,Univ. of Tokyo)

Session information

[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

[11a-N205-1] [Highlight]Nondestructive analysis of ferroelectric Hf_0.5Zr_0.5O₂ capacitors by laser-based photoelectron emission microscopy

[11a-N205-2] Investigation of suppression of SiO₂ interfacial layer formation during ferroelectric non-doped HfO₂ formation

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO₂

△ [11a-N205-4] Fabrication of CeOx/ Hf-Zr-O Structures by Solution Process

[11a-N205-5] Endurance Characteristics of Ferroelectric Hf_xZr_1-xO₂ Thin Film Treated by FLA

[11a-N205-6] Suppression of SiO₂ interfacial layer growth for TiN/Hf_xZr_1−xO₂/Si-MFS fabrication

▼ [11a-N205-7] Antiferroelectric properties in ALD ZrO₂ ultra-thin films and their relations with the crystalline phases

[11a-N205-8] Low-Voltage Retention and Endurance Improvement of Ferroelectric Hf_xZr_1-xO₂ by Thickness Scaling

▼ [11a-N205-9] Simulation Study on the Role of GIDL Current for Erase Operation in FeFETs

▲ [11a-N205-10] Role of GIDL Current for Efficient Erase Operation and Interfacial Layer Engineering for Low-Voltage Operation in HfO₂-based FeFET

▼ [11a-N205-11] Monolithic Integration of FET and Ferroelectric-Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application

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Session information

[11a-N205-1~11] CS.9 Code-sharing Session of 6.1 & 13.3 & 13.5

[11a-N205-1] [Highlight]Nondestructive analysis of ferroelectric Hf0.5Zr0.5O2 capacitors by laser-based photoelectron emission microscopy

[11a-N205-2] Investigation of suppression of SiO2 interfacial layer formation during ferroelectric non-doped HfO2 formation

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO2

△ [11a-N205-4] Fabrication of CeOx/ Hf-Zr-O Structures by Solution Process

[11a-N205-5] Endurance Characteristics of Ferroelectric HfxZr1-xO2 Thin Film Treated by FLA

[11a-N205-6] Suppression of SiO2 interfacial layer growth for TiN/HfxZr1−xO2/Si-MFS fabrication

▼ [11a-N205-7] Antiferroelectric properties in ALD ZrO2 ultra-thin films and their relations with the crystalline phases

[11a-N205-8] Low-Voltage Retention and Endurance Improvement of Ferroelectric HfxZr1-xO2 by Thickness Scaling

▼ [11a-N205-9] Simulation Study on the Role of GIDL Current for Erase Operation in FeFETs

▲ [11a-N205-10] Role of GIDL Current for Efficient Erase Operation and Interfacial Layer Engineering for Low-Voltage Operation in HfO2-based FeFET

▼ [11a-N205-11] Monolithic Integration of FET and Ferroelectric-Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application

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[11a-N205-1] [Highlight]Nondestructive analysis of ferroelectric Hf_0.5Zr_0.5O₂ capacitors by laser-based photoelectron emission microscopy

[11a-N205-2] Investigation of suppression of SiO₂ interfacial layer formation during ferroelectric non-doped HfO₂ formation

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO₂

[11a-N205-5] Endurance Characteristics of Ferroelectric Hf_xZr_1-xO₂ Thin Film Treated by FLA

[11a-N205-6] Suppression of SiO₂ interfacial layer growth for TiN/Hf_xZr_1−xO₂/Si-MFS fabrication

▼ [11a-N205-7] Antiferroelectric properties in ALD ZrO₂ ultra-thin films and their relations with the crystalline phases

[11a-N205-8] Low-Voltage Retention and Endurance Improvement of Ferroelectric Hf_xZr_1-xO₂ by Thickness Scaling

▲ [11a-N205-10] Role of GIDL Current for Efficient Erase Operation and Interfacial Layer Engineering for Low-Voltage Operation in HfO₂-based FeFET