〇Yuji Kurimoto¹, Daiki Kobayashi¹, Ayaka Kanai², Kunihiko Tanaka², Hideaki Araki³, Tamotsu Okamoto¹ (1.NIT Kisarazu Col., 2.Nagaoka Univ. of Tech., 3.NIT Nagaoka Col.)

10:15 AM - 10:30 AM

[21a-B202-6] Growth of ZnS buffer layer by atmospheric MOCVD method for CIGS solar cells

〇(M1)Fumiya Furumaki¹, Akihiro Funaki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech)

10:45 AM - 11:00 AM

△ [21a-B202-7] Analysis of TCO Resistance of CIGS Solar Cell Modules

〇(M1)Yosuke Abe¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech.)

11:00 AM - 11:15 AM

△ [21a-B202-8] Fundamental study on CIGS bifacial solar cells

〇Fusamichi Munekata¹, Yoshihiro Ichinohe¹, Masakazu Muraguchi¹, Naohito Kimura¹, Yohichiro Kojima¹ (1.Hokkaido Univ. Sci.)

11:15 AM - 11:30 AM

[21a-B202-9] Electronic structure of CIS/Mo back interface in CIS Solar cells

〇Kohei Hamashiri¹, Tsubasa Imanishi¹, Yu Miyanohara¹, Oki Kozima¹, Motoya Ohba¹, Takuya Kato², Yoshinori Kimoto², Syogo Ishiduka³, Jiro Nishinaga³, Hajime Shibata³, Yukiko Kamikawa³, Norio Terada¹ (1.Kagoshima Univ., 2.Idemitsu Kosan Co.Ltd., 3.AIST)

11:30 AM - 11:45 AM

[21a-B202-10] Evaluation of Cu(In,Ga) Se₂ solar cells by using EBIC measurement

〇Shinkai Shimizu¹, Fukuda Ryotaro¹, Nishimura Takahito¹, Yamada Akira¹ (1.Tokyo Tech)

11:45 AM - 12:00 PM

[21a-B202-11] Fabrication of the Cu(In,Ga)S₂ by the sulfurization with powder sulfur

〇(M1)Tomoki Shibata¹, Yota Suzuki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Inst.)

Oral presentation

[21p-B202-1~13] 13.9 Compound solar cells

Wed. Sep 21, 2022 1:30 PM - 5:00 PM B202 (B202)

Kunihko Tanaka(Nagaoka Univ. of Tech.), Kentaroh Watanabe(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

▼ [21p-B202-1] Effects of Thin Ag₂S Buffer Layers on CuGaS₂ Thin Films Grown with RF Sputtering

〇(M1C)Abhishek Gupta^1,2, Nazmul Ahsan², Myeongok Kim^2,3, Yoshitaka Okada^2,3 (1.Grad. Arts &Sci. UTokyo, 2.RCAST UTokyo, 3.Grad. Eng. UTokyo)

1:45 PM - 2:00 PM

▼ [21p-B202-2] Investigation on MoS₂ Thin-film for Solar Cell Applications

〇(M2)Danrong Xie^1,2, Myeongok Kim^1,2, Nazmul Ahsan², Abhishek Gupta³, Yoshitaka Okada^1,2 (1.Eng. U-Tokyo, 2.RCAST U-Tokyo, 3.Grad. Arts & Sci. U-Tokyo)

2:00 PM - 2:15 PM

▼ [21p-B202-3] Improved Photovoltaic Properties of Few-layer WS_0.3Se_1.7/WO_x Lateral p⁺-n Junctions

〇(D)Abdul A Kuddus¹, Kojun Yokoyama¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama University)

2:15 PM - 2:30 PM

[21p-B202-4] Band Alignment at CdS/Cu₂O Interface

〇Norio Terada¹, Katsuhiro Okubo¹, Daisuke Mukai¹, Kazushige Yamamoto², Naoyuki Nakagawa², Takehiko Nagai³, Hitoshi Tampo³ (1.Kagoshima Univ., 2.TOSHIBA Co., 3.AIST)

2:30 PM - 2:45 PM

[21p-B202-5] Fabrication of n-Fe-O / p-Cu-Fe-O thin film solar cells with a Mg(OH)₂ intermediate layer

〇RYO MURAKAMI¹, MASAYA ICHIMURA¹ (1.Nagoya Inst. of Tech.)

2:45 PM - 3:00 PM

[21p-B202-6] Drop-dry Deposition of SnO₂ and Fabrication of Heterojunctions with Co₃O₄

〇Tong Li¹, Masaya Ichimura¹ (1.Nagoya Inst. of Tech.)

3:00 PM - 3:15 PM

[21p-B202-7] Preparation of Cu3N thin film by RF magnetron sputtering and observation of n-type conduction

〇Masato Fujinaka¹, Haruki Nakamura¹, Syo Katagiri¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst. of Tech., 2.Int. Res. Center for Green Electronics)

3:30 PM - 3:45 PM

[21p-B202-8] Inverse Design and Fabrication of See-through type Perovskite/PbS Quantum Dot Intermediate Band Solar Cells by Including the Light Interference Effect

〇Kodai Shiba^1,2, Kouichi Yamaguchi¹, Qing Shen¹, Shuzi Hayase¹, Yoshitaka Okada³, Tomah Sogabe^1,2,3 (1.Univ. of Electro-Comm., 2.Grid inc., 3.The Univ. of Tokyo.)

3:45 PM - 4:00 PM

[21p-B202-9] Thin-film quantum dot solar cells with Fabry-Pérot light-trapping structure

〇Yusuke Oteki^1,2, Kento Kitahara^1,2, Naoya Miyashita², Yoshitaka Okada^1,2 (1.Univ. of Tokyo, 2.RCAST)

4:00 PM - 4:15 PM

△ [21p-B202-10] Influence of profile of external quantum efficiency on open circuit voltage and design optimization of quantum structure solar cells

〇(D)Meita Asami¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

4:15 PM - 4:30 PM

[21p-B202-11] Output-power maximization design method for two-terminal series connected PVTE tandems

〇Jun Sakuma¹, Kenji Kamide², Toshimitsu Mochizuki², Hidetaka Takato², Hidefumi Akiyama¹ (1.ISSP, Univ. of Tokyo, 2.AIST)

4:30 PM - 4:45 PM

[21p-B202-12] Universal lossless coupling formula for series-connected 2-terminal PVTE hybrids

〇Kenji KAMIDE¹, Jun Sakuma², Toshimitsu Mochizuki¹, Hidetaka Takato¹, Hidefumi Akiyama² (1.AIST, 2.ISSP, UTokyo)

4:45 PM - 5:00 PM

▼ [21p-B202-13] Electrical Properties of AlGaAs/GaAs-Based Two-Step Photon Up-Conversion Solar Cells with Doubled heterointerfaces

〇Hambalee Mahamu¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

Oral presentation

[22a-A307-1~7] 13.9 Compound solar cells

Thu. Sep 22, 2022 9:00 AM - 10:45 AM A307 (A307)

Kentaroh Watanabe(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [22a-A307-1] [Young Scientist Presentation Award Speech] Al_0.35GaAs / InGaP Heterojunction Solar Cell Based on Temperature-graded Growth

〇Gan Li¹, Hassanet Sodabanlu², Kentaroh Watanabe², Masakazu Sugiyama^1,2, Yoshiaki Nakano¹ (1.The Univ. of Tokyo, 2.RCAST, the Univ. of Tokyo)

9:15 AM - 9:30 AM

▼ [22a-A307-2] Characterization of III-V Compound Triple Junction Solar Cells using Laser Beam Induced Current Mapping

〇(M2)Thakur Vaishnavi^1,2, Bernice Y. Espaldon³, Naoya Miyashita², Nazmul Ahsan², Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST, UTokyo, 3.NIMS)

9:30 AM - 9:45 AM

[22a-A307-3] Evaluation of nonradiative recombination mapping of InGaAs solar cells with dislocation slip planes

〇Shogo Harada¹, Kosuke Morita¹, Hiroki Ohyama¹, Tomoki Harada^1,2, Junya Okubo¹, Hidetoshi Suzuki¹, Akio Ogura³, Mitsuru Imaizumi³, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Miyazaki Univ., 2.JSPS Research Fellow, 3.JAXA)

9:45 AM - 10:00 AM

[22a-A307-4] Investigation of room-temperature wafer bonding of isotype materials

〇(M1)Yuta Nishidate¹, Hisatsune Keito¹, Uchida Shiro¹ (1.Chiba Inst.)

10:00 AM - 10:15 AM

[22a-A307-5] Investigation of room-temperature wafer bonding of anisotype materials

〇(M1)Keito Hisatsune¹, Yuta Nishidate¹, Shiro Uchida¹ (1.Chiba Inst.)

10:15 AM - 10:30 AM

[22a-A307-6] Investigation of ohmic metals for III-V compound semiconductor solar cells

〇(M1)Kosuke Watanabe¹, Kaito Ishiihara¹, Yuta Wakabayashi¹, Shiro Uchida¹ (1.Chiba Inst.)

10:30 AM - 10:45 AM

[22a-A307-7] Loss Analysis of Si Tandem Solar Cells for PV-powered Vehicle

〇Masafumi Yamaguchi¹, Kyotaro Nakamura¹, Ryo Ozaki¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Tatsuya Takamoto², Taizo Masuda³ (1.Toyota Tech. Inst., 2.Sharp, 3.Toyota Motor)

Poster presentation

[22p-P08-1~16] 13.9 Compound solar cells

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P08 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[22p-P08-1] Analysis of spatial uniformity in InGaP/GaAs solar cells fabricated using HVPE

〇(M2)Daisuke Nagumo^1,2, Yasushi Shoji¹, Takeshi Tayagaki¹, Ryuji Oshima¹, Kikuo Makita¹, Yoshinobu Okano², Takeyoshi Sugaya¹ (1.AIST, 2.Tokyo City Univ.)

1:30 PM - 3:30 PM

▲ [22p-P08-2] Quantifying the influence of band tail recombination and quasi-fermi level splitting on the open-circuit voltage loss in CIGS solar cells

〇(D)Hamidou Tangara¹, Yulu He¹, Guo Junjie¹, Muhammad Monirul Islam¹, Shogo Ishizuka², Takeaki Sakurai¹ (1.Univ.Tsukuba, 2.AIST)

1:30 PM - 3:30 PM

[22p-P08-3] Effect of bifacial Cu(In,Ga)Se₂ photoelectrode for water-splitteing using In₂O₃:Ti as a back-contact

〇Kazuma Okada¹, Kana Ueda¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-4] Investigation of water splitting by photocathode using Cu₂SnS₃ thin films

〇Daiki Kanamori¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-5] Influence of (NH₂)₂CS concentration during depositing n-CdS layer on electric properties of Cu₂SnS₃(CTS) solar cell

〇Ayaka Kanai¹, Soichiro Saito², Hideaki Araki², Kunihiko Tanaka¹ (1.Nagaoka Univ Tech., 2.NIT, Nagaoka College)

1:30 PM - 3:30 PM

[22p-P08-6] Preparation of Cu₂SnS₃ thin films by sulfurization with low H₂S gas concentration

〇Yoji Akaki¹, Kakeru Kise¹, Hinata Abe¹, Tomohiro Uchimura¹, Shigeyuki Nakamura², Hideaki Araki³ (1.MIyakonojo Coll., 2.Tsuyama Coll., 3.Nagaoka Coll.)

1:30 PM - 3:30 PM

[22p-P08-7] Effect of retention time in the heat treatment conditions of compound solar cell light-absorbing layer Cu₂SnS₃thin film prepared by wet process

〇(B)Yuki Igarashi¹, Hasegawa Satomi¹, Ishida Tomoki¹, Tanaka Kunihiko², Moriya Katsuhiko¹ (1.NIT, Tsuruoka Col., 2.NUT)

1:30 PM - 3:30 PM

[22p-P08-8] Dependence of Solution Viscosity in Fabrication of Cu₂SnS₃(CTS) Optical Absorbing Layer by Dip Coating Method

〇(B)Satomi Hasegawa¹, Yuuki Igarashi¹, Tomoki Ishida¹, Katsuhiko Moriya¹ (1.NIT, Tsuruoka Col.)

1:30 PM - 3:30 PM

[22p-P08-9] Investigation of properties in Cu₂Sn_1-xGe_xS₃by observation of photoluminescence

〇Ryoma Hata¹, Ayaka Kanai¹, Mutsumi Sugiyama², Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech., 2.Tokyo Univ. Sci.)

1:30 PM - 3:30 PM

[22p-P08-10] Observation of photoluminescence in Cu₂Sn_1-xSi_xS₃ bulk crystals

〇Kazuhiro Iwasaki¹, Ayaka Kanai¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech.)

1:30 PM - 3:30 PM

[22p-P08-11] Effect of amorphous Sn-S precursors for the sulfurized SnS thin films

〇Takuma Shoji¹, Satoshi Urano¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-12] Effect of Sb on Sn-S precursors for the sulfurized SnS thin films

〇Satoshi Urano¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-13] Investigation of crystallization of SnS thin films by introducing MoS₂ buffer layer

〇Masato Matsushima¹, Kouta Takisawa¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-14] Influence of defects around pn-interface of SnS layer using ALD-deposited ZnO buffer

〇Rintaro Shinoda¹, Urano Satoshi¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P08-15] Fabrication of ZnS:Cl/SnS PN junction diode by thermal evaporation

〇(B)Nagisa Murakami¹, Yuto Kawabata¹, Hiroto Oomae¹ (1.NIT, Kushiro College)

1:30 PM - 3:30 PM

[22p-P08-16] Fabrication of novel transparent p-type semiconductors (copper halide thin films) by spin-coating method

〇Daisuke Homma¹, Kensuke Murayama¹, Kunihiko Tanaka², Katsuhiko Moriya¹ (1.NIT, Tsuruoka Col., 2.Nagaoka Univ. of Technology)

Sessions

13 Semiconductors » 13.9 Compound solar cells

[21a-B202-1~11] 13.9 Compound solar cells

△ [21a-B202-1] Identification of nonradiative recombination center in ZnSnP2 bulk crystals

△ [21a-B202-7] Analysis of TCO Resistance of CIGS Solar Cell Modules

△ [21a-B202-8] Fundamental study on CIGS bifacial solar cells

[21p-B202-1~13] 13.9 Compound solar cells

▼ [21p-B202-1] Effects of Thin Ag2S Buffer Layers on CuGaS2 Thin Films Grown with RF Sputtering

▼ [21p-B202-2] Investigation on MoS2 Thin-film for Solar Cell Applications

▼ [21p-B202-3] Improved Photovoltaic Properties of Few-layer WS0.3Se1.7/WOx Lateral p+-n Junctions

△ [21p-B202-10] Influence of profile of external quantum efficiency on open circuit voltage and design optimization of quantum structure solar cells

▼ [21p-B202-13] Electrical Properties of AlGaAs/GaAs-Based Two-Step Photon Up-Conversion Solar Cells with Doubled heterointerfaces

[22a-A307-1~7] 13.9 Compound solar cells

▲ [22a-A307-1] [Young Scientist Presentation Award Speech] Al0.35GaAs / InGaP Heterojunction Solar Cell Based on Temperature-graded Growth

▼ [22a-A307-2] Characterization of III-V Compound Triple Junction Solar Cells using Laser Beam Induced Current Mapping

[22p-P08-1~16] 13.9 Compound solar cells

▲ [22p-P08-2] Quantifying the influence of band tail recombination and quasi-fermi level splitting on the open-circuit voltage loss in CIGS solar cells

Authenticate

△ [21a-B202-1] Identification of nonradiative recombination center in ZnSnP₂ bulk crystals

▼ [21p-B202-1] Effects of Thin Ag₂S Buffer Layers on CuGaS₂ Thin Films Grown with RF Sputtering

▼ [21p-B202-2] Investigation on MoS₂ Thin-film for Solar Cell Applications

▼ [21p-B202-3] Improved Photovoltaic Properties of Few-layer WS_0.3Se_1.7/WO_x Lateral p⁺-n Junctions

▲ [22a-A307-1] [Young Scientist Presentation Award Speech] Al_0.35GaAs / InGaP Heterojunction Solar Cell Based on Temperature-graded Growth