Oral presentation

[15a-D419-1~9] 15.1 Bulk crystal growth

Wed. Mar 15, 2023 9:00 AM - 11:30 AM D419 (Building No. 11)

Horiai Takahiko(東北大), Haruhiko Koizumi(Hiroshima Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-D419-1] Single crystal growth of Ce-doped YScO₃ and Ce concentration dependence of the optical properties

〇Takahiko Horiai^1,2, Masao Yoshino^1,2, Yuui Yokota^1,2, Akira Yoshikawa^1,2 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ.)

9:15 AM - 9:30 AM

△ [15a-D419-2] Growth of a large-size bulk SrB₄O₇ crystal

〇Ryoh Noguchi¹, Kota Sekigawa¹, Yasunori Tanaka¹, Ryota Murai², Yoshinori Takahashi¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Yusuke Mori^1,2, Masashi Yoshimura^2,3 (1.Grad. Sch. of Eng., Osaka Univ., 2.SOSHO CHOKO Inc., 3.ILE, Osaka Univ.)

9:30 AM - 9:45 AM

[15a-D419-3] Single crystal growth of layered mixed-anion compounds Sr₂ZnCu₂(S_1-xSe_x)₂O₂

〇Takahiro Kato^1,2, Yuki Iwasa², Yuui Yokota³, Shigeyuki Ishida², Pavan Kumar Naik Sugali¹, Yoichi Higashi², Izumi Hase², Kenta Hongo⁴, Ryo Maezono⁴, Takahiko Horiai³, Akira Yoshikawa³, Taichiro Nishio¹, Hiroshi Eisaki², Hiraku Ogino² (1.Tokyo Univ. Sci., 2.AIST, 3.Tohoku Univ., 4.JAIST)

9:45 AM - 10:00 AM

[15a-D419-4] Growth and luminescent properties of pyrene crystals for neutron detection

〇Akihiro Yamaji¹, Shunsuke Kurosawa¹, Akira Yoshikawa^1,2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. IMR)

10:15 AM - 10:30 AM

[15a-D419-5] Evaluation of epi-ready wafer of ScAlMgO₄ single crystal.

〇Yuji Shiraishi¹, Toki Nanto¹, Hiroyuki Andou¹, Tsuguo Fukuda¹, Seiryu Shinichi², Takashi Fujii^1,3, Tsutomu Araki³, Kotaro Ishiji⁴ (1.Fukuda Crystal Lab., 2.OTAS Japan, 3.Ritsumeikan Univ., 4.SAGA-LS)

10:30 AM - 10:45 AM

[15a-D419-6] Relationship between anneal conditions and magnetostriction properties of Fe-Ga single crystals grown by vertical Bridgman method

〇Yuri Nishizawa¹, Toshinori Taishi¹, Kazuhiko Ohkubo², Masaaki Sato², Kiyoshi Izumi² (1.Shinshu Univ., 2.Sumitomo Metal Mining Co., Ltd.)

10:45 AM - 11:00 AM

[15a-D419-7] Comparison of magnetostrictive characteristics of Fe-Ga prismatic single crystals grown by vertical Bridgman method in different processing directions

〇Kiyoshi Izumi¹, Kazuhiko Okubo¹, Masaaki Sato¹, Gen Fujii¹, Kento Kitabayashi¹ (1.Sumitomo Metal Mining)

11:00 AM - 11:15 AM

[15a-D419-8] Investigation on segregation of phosphorus (P) in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method

Shiohara Kouta¹, 〇Toshinori Taishi¹, Arai Yasutomo², Kinoshita Kyoichi³ (1.Shinshu Univ., 2.JAXA, 3.Meiji Univ.)

11:15 AM - 11:30 AM

[15a-D419-9] SiGe crystals grown by the TLZ method in microgravity condition

〇Yasutomo Arai¹, Kyoichi Kinoshita², Kouta Shiohara³, Toshinori Taishi³, Takao Tsukada⁴, Masaki Kubo⁴ (1.JAXA, 2.Meiji Univ., 3.Shinshu Univ., 4.Tohoku Univ.)

Oral presentation

[15p-D419-1~8] 15.1 Bulk crystal growth

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D419 (Building No. 11)

Yuui Yokota(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:15 PM

[15p-D419-1] [INVITED] Magnetic alignment as “Epitaxy-free” triaxial crystal orientation technique

〇Shigeru Horii¹ (1.Kyoto Univ. Adv. Sci.)

2:15 PM - 3:00 PM

[15p-D419-2] [INVITED] Control of Crystallization Behavior for Soft Materials under Application of an External Electric Field

〇Haruhiko Koizumi¹ (1.Hiroshima Univ.)

3:15 PM - 3:30 PM

[15p-D419-3] A New Origin of the Strong Anisotropy Among Surface Growth Velocities: Faceted-Rough Surface Near Equilibrium

〇Noriko Akutsu¹ (1.Osaka Electro-Commu. Univ.)

3:30 PM - 3:45 PM

[15p-D419-4] Roughness Exponent and A Scaling Function for the Faceted-Rough Surface Near Equilibrium

〇Noriko Akutsu¹ (1.Osaka Electro-Commu. Univ.)

3:45 PM - 4:00 PM

[15p-D419-5] Numerical analysis of heat and mass transfer of Ga₂O₃ grown by skull melting method

〇Koichi Kakimoto¹, Isao Takahashi^1,2, Taketoshi Tomida², Yusuke Kida², Kei Kamada^1,2, Satoshi Nakano³, Akira Yoshikawa^1,2,4 (1.NICHe, Tohoku Univ., 2.C&A Co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)

4:00 PM - 4:15 PM

[15p-D419-6] COP distinctive low-density distribution in a dislocation-free Si ingot grown by NOC

〇Kazuo Nakajima¹, Masami Nakanishi², Martin Su², Chuck Hsu² (1.IMR, Tohoku Univ., 2.GlobalWafers Ltd.)

4:15 PM - 4:30 PM

[15p-D419-7] Investigation on constitutional supercooling with different growth directions in heavily B-doped CZ-Si single crystal growth

〇(M1)Shota Hosoda¹, Yuki Fukui¹, Toshinori Taishi¹, Yuta Watanabe², Nobumasa Kariya² (1.Shinshu Univ., 2.M.SETEK Co., Ltd.)

4:30 PM - 4:45 PM

▲ [15p-D419-8] Simple fabrication of anatase nano structures on stainless steel surface

〇(D)Dilan Priyankara Wijekoon¹, Masaru Shimomura¹ (1.Shizuoka Univ., Grad. School Sci. Technol.)

Poster presentation

[17p-PB04-1~1] 15.1 Bulk crystal growth

Fri. Mar 17, 2023 1:30 PM - 3:30 PM PB04 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

1:30 PM - 3:30 PM

[17p-PB04-1] Infrared properties of bulk SiGe crystals

〇Yasutomo Arai¹, Koji Tsubaki², Yoshifumi Katano², Shigeki Uchida², Masami Kataoka³, Shingo Sasaki³, Sato Yasunori³, Okuhisa Matsumura³, Takeo Kobae³, Takuya Kawasaki³ (1.JAXA, 2.TOPCON, 3.TDY)

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[15a-D419-1~9] 15.1 Bulk crystal growth

[15a-D419-1] Single crystal growth of Ce-doped YScO₃ and Ce concentration dependence of the optical properties

△ [15a-D419-2] Growth of a large-size bulk SrB₄O₇ crystal

[15a-D419-3] Single crystal growth of layered mixed-anion compounds Sr₂ZnCu₂(S_1-xSe_x)₂O₂

[15a-D419-4] Growth and luminescent properties of pyrene crystals for neutron detection

[15a-D419-5] Evaluation of epi-ready wafer of ScAlMgO₄ single crystal.

[15a-D419-6] Relationship between anneal conditions and magnetostriction properties of Fe-Ga single crystals grown by vertical Bridgman method

[15a-D419-7] Comparison of magnetostrictive characteristics of Fe-Ga prismatic single crystals grown by vertical Bridgman method in different processing directions

[15a-D419-8] Investigation on segregation of phosphorus (P) in homogeneous SiGe crystal growth by traveling liquidus-zone (TLZ) method

[15a-D419-9] SiGe crystals grown by the TLZ method in microgravity condition

[15p-D419-1~8] 15.1 Bulk crystal growth

[15p-D419-1] [INVITED] Magnetic alignment as “Epitaxy-free” triaxial crystal orientation technique

[15p-D419-2] [INVITED] Control of Crystallization Behavior for Soft Materials under Application of an External Electric Field

[15p-D419-3] A New Origin of the Strong Anisotropy Among Surface Growth Velocities: Faceted-Rough Surface Near Equilibrium

[15p-D419-4] Roughness Exponent and A Scaling Function for the Faceted-Rough Surface Near Equilibrium

[15p-D419-5] Numerical analysis of heat and mass transfer of Ga₂O₃ grown by skull melting method

[15p-D419-6] COP distinctive low-density distribution in a dislocation-free Si ingot grown by NOC

[15p-D419-7] Investigation on constitutional supercooling with different growth directions in heavily B-doped CZ-Si single crystal growth

▲ [15p-D419-8] Simple fabrication of anatase nano structures on stainless steel surface

[17p-PB04-1~1] 15.1 Bulk crystal growth

[17p-PB04-1] Infrared properties of bulk SiGe crystals

Authenticate

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[15a-D419-1~9] 15.1 Bulk crystal growth

△ [15a-D419-2] Growth of a large-size bulk SrB4O7 crystal

[15p-D419-1~8] 15.1 Bulk crystal growth

▲ [15p-D419-8] Simple fabrication of anatase nano structures on stainless steel surface

[17p-PB04-1~1] 15.1 Bulk crystal growth

Authenticate

△ [15a-D419-2] Growth of a large-size bulk SrB₄O₇ crystal