[B-9-2LN] Sharp Photoluminescence of the GaAs/AlGaAs SQWs Grown on Si Substrate by MEE at 300℃

M. Naganuma, W. Stolz, Y. Horikoshi (1.NTT Electrical Communications Loboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-9-3LN] Fabrication of Narrow Two-Dimensional Electron Gas Channels in GaAs/AlGaAs Sidewall Interfaces by Selective Growth

Hiromitsu Asai, Syoji Yamada, Takashi Fukui (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-9-4LN] Power AlGaAs Hetero-MIS Gate InP Field Effect Transistors

K. Asano, T. Itoh, K. Kasahara, T. Ozawa, K. Ohata (1.Microelectronics Research Laboratories, NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-10-1LN] Dual-Wavelength Twin-Stripe Laser Using Single Quantum Well Structure

Yasunori TOKUDA, Yuji ABE, Teruhito MATSUI, Noriaki TSUKADA, Takashi NAKAYAMA (1.Central Research Laboratory, Mitsubishi Electric Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-10-2LN] Tunable Wavelength Conversion Using a Multi-Electrode DFB LD with a Saturable Absorber

H. Kawaguchi, K. Oe, H. Yasaka, K. Magari, M. Fukuda, Y. Itaya (1.Electrical Communications Laboratories Nippon Telegraph and Telephone Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-10-3LN] Surface Emitting Bistable Multiquantum Well Lasers with a 45゜ Dry Etched-Mirror

Mitsunori Sugimoto, Noboru Hamao, Norikazu Takado, Masayasu Ueno, Hiroshi Iwata, Mamoru Uchida, Kentaro Onabe, Kiyoshi Asakawa, Tonao Yuasa (1.Opto-Electronics Research Laboratories NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

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