[B-4-2] Observation of Nonradiative Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope

Kazuo TSUBOUCHI, Yoshikazu AKUTSU, Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-4-3] DX-Center-Like Traps in AlGsSb

Yu ZHU, Yoshikazu TAKEDA, Akio SASAKI (1.Department of Electrical Engineering, Kyoto University)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Orientation Dependence of Electron Trap Incorporation in GaAs Grown by Gas Source Moleculer Beam Epitaxy

Kyozo KANAMOTO, Kozo KIMURA, Seishi HORIGUCHI, Makoto ISHII (1.Optoelectronics Joint Research Laboratory)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-5-2] A Model of the Surface State Distribution for AIN/GaAs System

Masashi MIZUTA, Shinji FUJIEDA, Yoshishige MATSUMOTO (1.Fundamental Research Laboratories, NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure

T. Kato, H. Kano, M. Hashimoto, H. Sakaki, I. Igarashi (1.Toyota Central Research and Development Laboratories Inc., 2.Institute of Industrial Science, The University of Tokyo)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Growth of GaAs Layers on (001) Si Substrates

S. Naritsuka, C. Nozaki, N. Sugiyama, Y. Nishikawa, S. Yasuami, Y. Kokubun (1.Research and Development Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Low Temperature Growth of GaAs on Si by Migration Enhanced Molecular Beam Epitaxy

Shin Yokoyama, Dai Yui, Takashi Shiraishi, Mitsuo Kawabe (1.Institute of Materials Science, University of Tsukuba)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-6-3] The Growth of GaAs on Recrystallized Ge/SiO2/GaAs

T. Kimura, C. Yamagishi, T. Ueda, M. Akiyama (1.R&D Division, Oki Electric Industry Co., Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Heteroepitaxy of InP on (100)Si by Organometallic Vapor Phase Epitaxy

Naoto UCHIDA, Mitsuru SUGO, Akio YAMAMOTO, Masafumi YAMAGUCHI (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Se Atomic Planar Doping to GaAs by MOCVD and Its Application to Two-Dimensional Electronic Devices

Yasufumi FUJIWARA, Yoshito FUKUMOTO, Takeshi KOBAYASHI, Yoshihiro HAMAKAWA (1.Faculty of Engineering Science, Osaka University)

1987 Conference on Solid State Devices and Materials |PDF Download