[C-7-1] Conductive E-Beam Resist

H. Watanabe, Y. Todokoro (1.Kyoto Research Laboratory, Matsushita Electronics Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-7-2] 0.25μm Pattern Formation by Variably Shaped EB Exposure System EX-7

K. Hattori, S. Tamamushi, H. Wada, H. Kusakabe, I. Sasaki, T. Abe, K. Koyama, O. Ikenaga, K. Ohta, R. Yoshikawa, T. Takigawa (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Maskless Ion Beam Assisted Etching of SiO2

Zheng XU, Kenji GAMO, Susumu NAMBA (1.Faculty of Engineering Science, Osaka University)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-7-4] Two-Dimensional Monte Carlo Simulation of Damage Distribution Induced by Ion Implantation into Submicron Silicon Areas

Shoji Shukuri, Tohru Ishitani, Masao Tamura, Yasuo Wada (1.Central Research Laboratory, Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-7-5] Formation of Arsenic-Implanted PN Junctions Using High Vacuum Ion Implanter

T. Ohmi, K. Masuda, T. Hashimoto, T. Shibata, M. Kato, Y. Ishihara (1.Department of electronics, Faculty of Engineering, Tohoku University)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-7-6] Analysis of Dopant Diffusion in Si by a Pulsed Excimer Laser

Toshiyuki SAMESHIMA, Setsuo USUI (1.Sony Research Center)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Depth Measurement Techniques for Silicon Trenches

Tokuo Kure, Tsutomu Komoda, Minori Noguchi, Hideo Sunami, Tetsuya Hayashida (1.Central Research Laboratory, Hitachi Ltd., 2.Production Engineering Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Doping of Trench Capacitor Cell with As SOG for 4 Megabit DRAM's

Y. Morita, K. Ishikawa, K. Yoneda, H. Oishi, S. Terakawa, M. Yoshida, M. Inoue (1.Kyoto Research Laboratory Matsushita Electronics Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Arsenic Diffusion from Solid Source and Its Application to Trench Capacitor

Tetsuo BIWA, Hisakazu MIYATAKE, Yoshihisa NOGAMI, Hiroaki SHIMIZU (1.VLSI Development Laboratories, IC Group, Sharp Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-8-4] Plasma Doping into the Side-Wall of a Sub-0.5μm Width Trench

Bunji MlZUNO, Ichiroh NAKAYAMA, Nobuo AOI, Masafumi KUBOTA (1.Semiconductor Research Center, 2.Production Engineering Laboratory, Matsushita Electric Industrial Co., Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download