[B-7-2] Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

Hee Chul LEE, Tanemasa ASANO, Hiroshi ISHIWARA, Seigo KANEMARU, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Improvement in Conversion Efficiency of MOCVD GaAs Solar Cells using AlGaAs Buffer Layers

S. Ochi, N. Hayafuji, N. Ogasawara, M. Kato, K. Mitsui, K. Yamanaka, T. Murotani (1.LSI R&D Laboratory, Mitsubishi Electric Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Nb/Compound Semiconductor Heterostructures Epitaxially Grown by Interrupted Electron Beam Deposition

Masayoshi TONOUCHI, Koichi HASHIMOTO, Yoshiyuki SAKAGUCHI, Sadamu KITA, Takeshi KOBAYASHI (1.Faculty of Engineering Science, Osaka University)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-1-1] The Characterization of P-MOS FET Fabricated on SOI with Controlled Crystal Orientation

K. Shirakawa, M. Maekawa, O. Yamazaki, H. Tsuji, M. Koba (1.Central Research Laboratories, SHARP Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-1-2] MOS-FETs Fabricated by SPE-SOI Technology

K. Kusukawa, M. Moniwa, E. Murakami, M. Miyao, T. Warabisako, Y. Wada (1.Central Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Seed Shape Dependence of Si Solid Phase Epitaxy

Eiichi Murakami, Masahiro Moniwa, Kikuo Kusukawa, Masanobu Miyao, Terunori Warabisako, Yasuo Wada (1.Central Research Laboratory, Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-1-4] SOI Recrystallization using a Multiply Separated Seed Structure

S. Kambayashi, T. Inoue, M. Kemmochi, I. Higashinakagawa, T. Yoshii (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Selective Growth of Nuclei on Amorphous Substrates

T. Yonehara, Y. Nishigaki, H. Mizutani, S. Kondoh, K. Yamagata, T. Ichikawa (1.Research Center, Canon Inc.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-1] The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

Kazuyuki TSUNOKUNI, Kazuo NOJIRI, Sumi KUBOSHIMA, Kado HIROBE (1.Musashi Works, Hitachi, Ltd., 2.Hitachi Microcomputer Engneering, Ltd., 3.Kanagawa Works , Hitachi, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Electron Spin Resonance Study of a New Positively Charged Defect in Device Oxides Damaged by Soft X-Rays

B. B. Triplett, T. Takahashi, K. Yokogawa, T. Sugano (1.Dept. of Electronic Engineering, University of Tokyo, 2.Intel Researcher in Residence, 3.Nippon Steel Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download