[C-3-3] Evaluation of Mobile Ion Contamination in Tungsten-Gate MOS Process Using Triangular Voltage Sweep Method

Masayoshi Saito, Naoki Yamamoto, Seiichi Iwata (1.Hitachi Central Research Laboratory)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals

Rinshi Sugino, Yasuo Nara, Tatsuya Yamazaki, Satoru Watanabe, Takashi Ito (1.FUJITSU LABORATORIES LTD., Atsugi)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-5] Formation of Inter-Poly Si Dielectrics by Rapid Thermal Processing

Natsuo AJIKA, Masahiro SHIMIZU, Katsuhiro TSUKAMOTO, Makoto HIRAYAMA, Takayuki MATSUKAWA (1.Mitsubishi Electric Corp. LSI R and D Lab.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-6] Highly Reliable Ta2O5/SiO2 Double Dielectric Films on Poly Crystalline Silicon

H. SHINRIKI, Y. NISHIOKA, K. MUKAI (1.CENTRAL RESEARCH LABORATORY, HITACHI, Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-3-7] Photo-CVD of Tantalum Oxide Films and Their Characteristics

Yasuo TARUI, Satoshi OKA, Masahiro MATSUI, Koji YAMAGISHI, Koichi KUROIWA (1.Department of Electronic Engineering, Tokyo University of Agriculture and Technology)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Determination of Band Discontinuity in Amorphous Semiconductor Heterojunctions

Tsukasa HAYASHI, Seiichi MIYAZAKI, Masataka HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA, Kentaro SHIBAHARA, Woosik YOO, Shigehiro NISHINO, Hiroyuki MATSUNAMI (1.Department of Electrical Engineering, Kyoto University, 2.Department of Electrical Engineering, Kyoto Institute of Technology)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition

Katsuki FURUKAWA, Atsuko UEMOTO, Yoshihisa FUJII, Mitsuhiro SHIGETA, Akira SUZUKI, Shigeo NAKAJIMA (1.Central Research Laboratories, Engineering Center Sharp Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-4-4] In- and Out-Diffusion and Aggregation of Nitrogen in Si Crystals

Taizo Ito, Takao Abe (1.R & D Center Shin-Etsu Handoutai Co., Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-4-5] Formation of High Quality Epitaxial Silicon Films by Ultra Clean Technology

Tadahiro Ohmi, Shigeru Kuromiya, Syunji Yoshitake, Hiroshi Iwabuchi, Genichi Sato, Junichi Murota (1.Faculty of Engineering, Tohoku University, 2.Research Institute of Electrical Communication, Tohoku University)

1987 Conference on Solid State Devices and Materials |PDF Download