[A-0-1] Quantum Mechanical and Non-Steady-State Transport Phenomena in Nanostructured Silicon Inversion Layers

D. A. Antoniadis (1.Massachusetts Institute of Technology)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-0-2] BiCMOS Process and Device Technology for High Speed VLSIs

Takahide Ikeda (1.Device Development Center, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-1-1] SCC (Surrounded Capacitor Cell) Structure for DRAM

G. Fuse, K. Tateiwa, S. Odanaka, T. Yamada, I. Nakao, H. Shimoda, O. Shippou, M. Fukumoto, J. Yasui, Y. Naito, T. Ohzone (1.Matsushita Elec. Ind. Co. Ltd. Semiconductor Research Center)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-1-2] A 5.4μm2 Sheath-Plate-Capacitor DRAM Cell with Self-Aligned Storage-Node Insulation

T. Kaga, Y. Kawamoto, T. Kure, Y. Nakagome, M. Aoki, T. Makino, H. Sunami (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-1-3] A 5.4μm2 Stacked Capacitor DRAM Cell with 0.6μm Quadruple-Polysilicon Gate Technology

S. Kimura, Y. Kawamoto, N. Hasegawa, A. Hiraiwa, M. Horiguchi, M. Aoki, T. Kisu, H. Sunami (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-1-4] MeV-Boron Implanted Buried Barrier for Soft Error Reduction in Megabit DRAM

Y. Matsuda, K. Tsukamoto, M. Inuishi, M. Shimizu, M. Asakura, K. Fujishima, J. Komori, Y. Akasaka (1.LSI R&D Lab. Mitsubishi Electric Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-2-1] The Improvement of LDD MOSFET's Characteristics by the Oblique-Rotating Ion Implantation

T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh, T. Matsukawa (1.LSI R & D Laboratory, Mitsubishi Electric Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Initial Stage Degradation Mechanism in Hot-Carrier Effects

Yasuo lgura, Kazunori Umeda, Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics

I. Kamohara, T. Wada, H. Tango (1.VLSI Research Center,Toshiba Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Alpha-Particle-Induced Source-Drain Penetration (ALPEN) Effects -A New Soft Error Phenomenon-

Digh Hisamoto, Tohru Toyabe, Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download