[C-8-5] Stress Measurement of LOCOS Structure using Microscopic Raman Spectroscopy

K. Kobayashi, Y. Inoue, T. Nishimura, T. Nishioka, H. Arima, M. Hirayama, T. Matsukawa (1.LSI Research and Development Lab., Mitsubishi Electric Corp.)

1987 Conference on Solid State Devices and Materials |PDF Download

[C-8-6] Micro Area Stress around Trench Structure

S. NADAHARA, S. KAMBAYASHI, M. WATANABE, T. NAKAKUBO (1.VLSI Research Center, Toshiba Corporation, 2.Total Information System Div., Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-1] A 20 ps/G Si Bipolar IC Using Advanced SST with Collector Ion Implantation

Shinsuke KONAKA, Yoshihito AMEMIYA, Kazuhito SAKUMA, Tetsushi SAKAI (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-2] A Micro-Crystal Emitter Heterojunction Bipolar Transistor

Kimihiro SASAKI, Seijiro FURUKAWA (1.Department of Applied Electronics, Graduate School of Sci. & Eng., Tokyo Inst. of Tech.)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-3] A Nanometer-Base Silicon Bipolar Transistor Using an Ultra-Shallow Gallium Diffusion Process

Mamoru UGAJIN, Shinsuke KONAKA, Yoshihito AMEMIYA (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-4] Device Structure and Electrical Characteristics of SST-CMOS

Yasuyuki TANABE, Yoshiji KOBAYASHI, Yousuke YAMAMOTO, Tetsushi SAKAI (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-5] Lower Submicrometer MOSFETs Fabricated by Direct EB Lithography

A. Toriumi, M. Iwase (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-6] Substrate Hole Current Generation due to Electron Tunneling in Metal-Oxide-Semiconductor System

A. Toriumi, M. Iwase (1.VLSI Research Center, Toshiba Corporation)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-7] Hot Carrier Degradation Masking due to Velocity Saturation in Low Temperature Operated MOSFETs

Kazuo Yano, Masaaki Aoki, Toshiaki Masuhara (1.Central Research Laboratory, Hitachi Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download

[S-I-8] Negative Differential Resistance Characteristics of an In0.53 Ga0.47 As/In1-x Alx As Pseudomorphic Resonant Tunneling Barrier Grown by MBE

Tsuguo INATA, Shunichi MUTO, Shigehiko SASA, Toshio FUJII, Satoshi HIYAMIZU (1.Fujitsu Laboratories Ltd.)

1987 Conference on Solid State Devices and Materials |PDF Download