[S-IIIA-7] Near-Ballistic Collection in an AlGaAs/GaAs HBT

Tadao ISHIBASHI (1.NTT LSI Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-8] Hot Electron Transport in a Graded Band Gap Base Heterojunction Bipolar Transistor

J. R. Hayes, J. P. Harbison (1.Bell Communications Research Inc.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-9] Comparison of Effects of Ionizing Radiation and High-Current Stress on Characteristics of Self-Aligned Bipolar Transistors

T. C. Chen, J. P. Norum, T. H. Ning (1.IBM Research Division, Thomas J. Watson Research Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-10] Atomic Layer Epitaxy Grown Heterojunction Bipolar Transistor Having a Carbon Doped Base

J. R. Hayes, R. Bhat, E. Colas, R. Esagui (1.Bell Communications Research, Inc.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-11] Integration of GaAs SISFET and GaAs Inversion-Base Bipolar Transistor

Kazuhiko Matsumoto, Yutaka Hayashi, Takeshi Kojima, Toshiyuki Nagata, Tomomi Yoshimoto (1.Electrotechnical Laboratory MITI)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-12] High-Performance InGaAs Metal-Semiconductor Field Effect Transistors for Optoelectronic and High-Speed IC's

G. -K. CHANG, W. K. CHAN, W. P. HONG, R. BHAT, C. C. CHANG, N. E. SCHLOTTER (1.Bell Communications Research)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-13] The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD

C. Y. Chang, W. Lin, W. C. Hsu, L. B. Di, F. Kai (1.Semiconductor and System Laboratories Institute of Electrical and Computer Engineering National Cheng Kung University, 2.Institute of Electronics National Chiao Tung University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-14] Novel High-Performance N-AlGaAs/InGaAs/N-AlGaAs Pseudomorphic DH MODFETs

Katsunori NISHII, Toshinobu MATSUNO, Osamu ISHIKAWA, Hideki YAGITA, Kaoru INOUE (1.Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIA-15] Application of Nonlinear Magnetostatic Waves in the Construction of Thin-Film Solid State Devices

A. D. BOARDMAN, Yu. V. GULYAEV, S. A. NIKITOV (1.Dept. of Physics, Salford University, 2.IRE Academy of Sciences)

1988 International Conference on Solid State Devices and Materials |PDF Download

[S-IIIB-1] Down-Flow Process in VLSI Manufacturing

H. Okano, N. Hayasaka, H. Nishino, K. Horioka, T. Arikado (1.ULSI Research Center, Toshiba Corp.)

1988 International Conference on Solid State Devices and Materials |PDF Download