[C-4-1] Formation and Properties of Si1-xGex/Si Structures by Solid Phase Heteroepitaxy

Ken OHTA, Junichi SAKANO, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Evidence of Resonant Tunneling in a-Si:H/a-Si1-xCx:H Superlattice Structures

Y. L. JIANG, H. L. HWANG, C. E. NEBEL, G. H. BAUER (1.Department of Electrical Engineering, Tsing Hua University, 2.Institut fuer Physikalische Elektronik, Universitat Stuttgart)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Identification of Physical and Electronic Structure of Amorphous Silicon (Carbon) Hydrogen Alloy by Thermal Annealing

Wen-Jyh Sah, Hsiung-Kuang Tsai, Si-Chen Lee (1.Department of Electrical Engineering National Taiwan University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] DX Centers in Si-Doped AlAs

Makoto KASU, Shizuo FUJITA, Susumu NODA, Akio SASAKI (1.Department of Electrical Engineering, Kyoto University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] The Theory of Deep Donor State in AlxGa1-xAs

Si-Chen Lee, J-S Jan (1.Department of Electrical Engineering National Taiwan University, 2.National Tsing Hwa University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Experimental Studies of Hot Electron Effects in GaAs MESFETs

Manfred Berroth, Michael Shur, William Haydl (1.Fraunhofer-Institut fur Angewandte Festkorperphysik)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] Correlation between Photoluminescence and Surface State Density on GaAs Surfaces Subjected to Various Surface Treatments

Hideki Hasegawa, Toshiya Saitoh, Seiichi Konishi, Hirotatsu Ishii, Hideo Ohno (1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Stabilization of GaAs Surface/Interface by Sulfur Treatment

H. Oigawa, J. Fan, Y. Nannichi, K. Ando, K. Saiki, A. Koma (1.Institute of Materials Science, University of Tsukuba, 2.Department of Chemistry, University of Tokyo)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-6] Pronounced Improvement of the Interface Property of Fluoride/GaAs Structures by Post-Growth Annealing

Kwang Ho KIM, Hiroshi ISHIWARA, Tanemasa ASANO, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-1-7] Effects of PAsxNy Deposition Conditions on the Characteristics of In0.53 Ga0.47As Metal-insulator-Semiconductor Field Effect Transistors

Y. Iwase, A. Kawahara, F. Arai, T. Sugano (1.Department of Electronic Engineering, University of Tokyo)

1988 International Conference on Solid State Devices and Materials |PDF Download