[PC6-4] Operation of Ultra-Thin-Film SOI/SIMOX pMOSFET's at Liquid Nitrogen Temperature

K. Sukegawa、T. Ishigaki、S. Kawamura (1.ULSI R&D Division, Fujitsu Limited)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC6-5] Internal Barrier Height Lowering Due to Grain Boundary Charge Repopulation in Polycrystalline Silicon

Mariko Takayanagi Takagi、Masao Iwase、Akira Toriumi (1.ULSI Research Center, TOSHIBA Corporation)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC6-6] A Proposal of a Highly Sensitive Interline CCD for HDTV

Toshifumi Ozaki、Hideaki Ono、Haruhiko Tanaka、Kazuya Tokumasu (1.Central Research Laboratory, Hitachi Ltd.)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC6-7] Electrical Transport Properties in the Restricted MOS Inversion Layers

Akiko Ohata、Akira Toriumi (1.ULSI Research Center, Toshiba Corporation)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC6-8] In-situ Doping of Epitaxial Silicon by Low-Temperature LPCVD for the Fabrication of Delta-Doped MOSFETs

R. Kircher、J. Murota、M. Furuno、K. Aizawa、M. Kato、A. Horinouchi、S. Ono (1.Research Institute of Electr. Communication Tohoku University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-1] Atomic Imaging, Atomic Processing and Nanocharacterization of Semiconductor Surfaces

Lawrence L. KAZMERSKI、Helio R. MOUTINHO (1.Solar Energy Research Institute)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-2] Nanometer-Scale Process Technology on Graphite Surfaces by Scanning Tunneling Microscope

K. Uesugi、T. Kurosu、M. Iida、T. Yao (1.Department of Electrical Engineering, Hiroshima University、2.Faculty of Engineering, Tokai University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-3] Surface States for the GaAs(001) Surfaces Observed by Photoemission Yield Spectroscopy

K. Hirose、T. Nogucchi、A. Uchiyama、M. Uda (1.Fundamental Research Laboratories, NEC Corporation、2.Department of Material Science and Engineering, Waseda University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-4] A New Surface Passivation of GaAs Using CVD --Atomic Layer Passivation--

Yoshinori WADA、Yoichi MADA、Kazumi WADA (1.NTT LSI Laboratories)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-5] Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin MBE Si Layers

Masamichi Akazawa、Hirotatsu Ishii、Hideki Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

1991 International Conference on Solid State Devices and Materials |PDF ダウンロード

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