[PD-2-3] Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors

Shigeharu Matsushita, Emi Fujii, Daijiro Inoue, Satoshi Terada, Seiichi Banba, Kohji Matsumura, Minoru Sawada, Yasoo Harada (1.Microelectronics Research Center, SANYO Electric Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-4] A Short Channel HEMT Model for Circuit Simulation Based on Physical Structure

Kenichi Nakashi, Kenji Taniguchi, Yoshitaka Oka, Fuyuki Nakamura (1.Department of Electrical Engineering, Kyushu University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Tapered Thickness Waveguide Integrated BH MQW Lasers

H. Soda, H. Kobayashi, T. Yamamoto, M. Ekawa, S. Yamazaki (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Beam Expander-Integrated Lasers Grown by Single-Step MOVPE

Hiroshi Sato, Masahiro Aoki, Makoto Takahashi, Masaaki Komori, Kazuhisa Uomi, Sinji Tsuji (1.Central Research Lab. HITACHI, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Novel Structure of 1.3 μm Strained-Layer MQW Complex-Coupled DFB Lasers

Masahiro Kito, Shinji Nakamura, Nobuyuki Otsuka, Masato Ishino, Yasushi Matsui (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers

Hisao SAITO, Naoki KOBAYASHI, Hiroaki ANDO (1.NTT Basic Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-4-5] Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer

Hideto ADACHI, Satoshi KAMIYAMA, Isao KIDOGUCHI, Takeshi UENOYAMA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 2.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers

Kazunori SHINODA, Kiyohisa HIRAMOTO, Misuzu SAGAWA, Kazuhisa UOMI (1.Central Research Laboratory, Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs

Hyo-Hoon PARK, Byueng-Su YOO, El-Hang LEE, Min Soo PARK, Byung Tea AHN (1.Electronics and Telecommunications Research Institute, 2.Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors

Junichi KATO, Fumio KOYAMA, Akihiro MATSUTANI, Toshikazu MUKAIHARA, Kenichi IGA (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

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