[PC-12-3] Dry O2 Hgh Pressure Field Oxidation for 0.25 μm Isolation Technology

Viju K. MATHEWS, Pierre C. FAZAN, Nanseng JENG, Sang S. KIM, Alan EMAMI (1.Micron Technology, Inc., 2.Gasonics International)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-1] New Crystallization Process of LPCVD a-Si Films below 530℃ Using Metal Adsorption Method

Dong Kyun Sohn, Jeong No Lee, Byung Tae Ahn (1.Department of Materials Science & Engineering, Korea Advanced Institute of Science and Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-2] Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors

Chun-Yen Chang, Hsiao-Yi Lin, Jyh-Chang Hwu, Juing-Yi Cheng, Tan Fu Lei, Liang-Po Chen, Bau-Tong Dai (1.Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 2.National Nano Device Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-3] Preamorphization of the Channel Region of MOS Devices for Shallow Counter Doping

Masayasu Miyake, Yukio Okazaki, Toshio Kobayashi (1.NTT LSI Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-4] Diffusion and Segregation of Nitrogen in Polycrystalline Silicon and at the Poly-Si/SiO2 Interface

Satoshi Nakayama, Tetsushi Sakai (1.NTT LSI Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-5] Impact of a High Concentration Fluorine Layer on Carriers Transport at the Poly-Si/Si Interface

T. P. Chen, T. F. Lei, C. Y. Chang (1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University, and, 2.National Nano Device Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-6] Cyclotron Resonance Investigation of Multi-Quantum-Well Heterostructures Ge/Ge1-xSix

V. Ya. Aleshkin, N. A. Bckin, I. V. Erofeeva, V. I. Gavrilenko, Z. F. Krasil'nik, O. A. Kuznetsov, M. D. Moldavskaya, V. V. Nikonorov, L. V. Paramonov, V. M. Tsvetkov (1.Institute for Physics of Microstructures of Russian Academy of Sciences)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-13-7] Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching

Rinji SUGINO, Toshiro NAKANISHI, Kanetake TAKASAKI, Takashi ITO (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Sequential Thermal CVD Process Using Fast Thermal Processor(FTP)

Katsuya OKUMURA, Yoshitaka TSUNASHIMA (1.TOSHIBA at IBM Semiconductor Research & Development Center)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] Al-Selective CVD Induced by Hydrogen Desorption on Si

H. Sakaue, Y. Katsuta, S. Konagata, S. Shingubara, T. Takahagi (1.Dept. of Electrical Engineering, Hiroshima University)

1995 International Conference on Solid State Devices and Materials |PDF Download

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