[B-4-5] Simulation of Enhanced Drain Current Characteristics in a MOSFET with a Quantum Wire Structure Incorporating a Periodically Bent Si-SiO2 Interface

Junko TANAKA, Akemi SAWADA (1.Central Research Laboratory, Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-4-6] Analysis of Chaos in Capacitance-npn-Transistor Pair and Its Application to Neuron Element

Takahiro IRITA, Minoru FUJISHIMA, Koichiro HOH (1.Department of Information and Communication Engineering, the University of Tokyo)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Characterization of a Cleaning Technology for Silicon Surface by Hot Pure Water Containing a Little Dissolved Oxygen

Yuka HAYAMI, Miki T. SUZUKI, Yoshiko OKUI, Hiroki OGAWA, Shuzo FUJIMURA (1.Process Development Division, C850, FUJITSU LIMITED)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Cleaning of Silicon Surfaces by NF3 Added Hydrogen and Water Vapor Plasma Downstream Treatment

Jun KIKUCHI, Mitsuaki NAGASAKA, Shuzo FUJIMURA, Hiroshi YANO, Yasuhiro HORIIKE (1.Manufacturing Technology Division, FUJITSU LIMITED, 2.Process Development Division, FUJITSU LIMITED, 3.Electrical & Electronics Engineering, Toyo University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Study of Cu Contamination Removal Using Electrolytic Ionized Water

H. Aoki, S. Yamasaki, Y. Shiramizu, N. Aoto, T. Imaoka, T. Futatsuki, Y. Yamasita, K. Yamanaka (1.ULSI Device Development Laboratories, NEC Corporation, 2.Central Laboratories, ORGANO Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Precise Control of SiO2 Etching Characteristics Using Mono-Layer Adsorption of HF/H2O Vapor

Naruhiko NAKANISHI, Nobuyoshi KOBAYASHI (1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-1] Formation Process of Highly Reliable Ultra-Thin Gate Oxide

K. Ohmi, T. Iwamoto, T. Yabune, T. Miyake, T. Ohmi (1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-2] Highly Reliable Ultra Thin Gate Dielectrics for Dual-Gate CMOS Devices

L. K. Han, D. Wristers, T. S. Chen, C. Lin, K. Chen J. Fulford, D. L. Kwong (1.Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas, 2.Advanced Micro Devices)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-3] Reliability of Structurally Modified Ultra-Thin Gate Oxides

Hideki SATAKE, Naoki YASUDA, Akira TORIUMI (1.ULSI Research Laboratories, TOSHIBA Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-4] Electron Tunneling through Chemical Oxide of Silicon

Masanori MATSUDA, Kunihiro WATANABE, Masatoshi YASUTAKE, Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.Scientific Instruments Division, Development Department, Seiko Instruments Inc.)

1995 International Conference on Solid State Devices and Materials |PDF Download

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