[D-2-2] Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy

Pablo O. VACCARO, Makoto HOSODA, Kazuhisa FUJITA, Toshihide WATANABE (1.ATR Optical and Radio Communications Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate

T. M. Cheng, C. Y. Chang, G. R. Lin, F. Ganikhanov, C. L. Pan, J. H. Huang (1.Institute of Electronics, National Chiao-Tung University, 2.Institute of Electro-Optical Engineering, National Chiao-Tung University, 3.Materials of Science Center, National Tsing-Hua University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells

Toshiki Makimoto, Naoki Kobayashi (1.NTT Basic Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices

N. Ohtani, H. Mimura, M. Hosoda, K. Tominaga, T. Watanabe, K. Fujiwara (1.ART Optical and Radio Communications Research Laboratories, 2.Department of Electrical Engineering, Kyushu Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-1] Defects in Amorphous Silicon-Nitrogen Alloy Films

Tatsuo SHIMIZU (1.Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-2] Interface States in Top Gate Metal-Silicon Nitride-Silicon Structures

J. Kanicki S. Backert, N. Picard (1.Center for Display Technology and Manufacturing The University of Michigan, 2.Department of Solid State Physics Ecole Polytechnique)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-3] Oxynitride Pad LOCOS (ON-LOCOS) Isolation Technology for Gigabit DRAMs

Yasuhiro Sambonsugi, Tatsuya Yamazaki, Shoichiro Kawashima, Toshihiro Sugii (1.FUJITSU LABORATORIES LTD.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-1] Simulations of Crack Propagation and Fracture in Silica and Silicon Nitride Films on Parallel Computers

Priya VASHISHTA, Aiichiro NAKANO, Rajiv K. KALIA (1.Concurrent Computing Laboratory for Materials Simulations Department of Physics and Astronomy, and Department of Computer Science Louisiana State University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-2] Application of CVD SiO2 Single Layer Films to Inter-Poly Dielectrics of Flash Memories

T. Kobayashi, M. Ushiyama, N. Miyamoto, J. Yugami, H. Kume, K. Kimura (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi Device Engineering Co.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-3] Investigation of Interlayer Dielectric Material Influence on DRAM Retention Time

M. Ohishi, K. Matsui, K. Koyama (1.ULSI Device Development Laboratories, NEC Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

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