[PC-7-2] GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement

Noriyuki OHNOKI、Toshikazu MUKAIHARA、Nobuaki HATORI、Akimasa MIZUTANI、Fumio KOYAMA、Kenichi IGA (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-3] The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates

Cheng Chiang PHUA、Tow Chong CHONG、Wai Shing LAU、Leng Seow TAN (1.Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-4] 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl2/N2 Mixture

Isao KIDOGUCHI、Hideto ADACHI、Kiyotake TANAKA、Toshiya FUKUHISA、Masaya MANNOH、Akira TAKAMORI (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-5] 1200 DPI Light Emitting Diode Array for Optical Printer Print Heads

Mitsuhiko OGIHARA、Takatoku SHIMIZU、Masumi TANINAKA、Hiroshi HAMANO、Yukio NAKAMURA、Ichimatsu ABIKO (1.Microsystems Technology Laboratory, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-6] AFM Direct Measurement of Sidewall Roughness in GaAs/AlGaAs Waveguides

K. Hosomi、M. Shirai、K. Hiruma、J. Shigeta、T. Katsuyama (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-7] Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated by an Atomic Force Microscope

Taro ITATANI、Yuichi KOTAKI、Tadashi NAKAGAWA、Kazuhiko MATSUMOTO、Yoshinobu SUGIYAMA、Hisao UCHIKI (1.Electrotechnical Laboratory、2.Nagaoka University of Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-8] Localization of Photons in Two-Dimensional Triangular Lattices with Periodic Defects

Xiao-Ping FENG、Yasuhiko ARAKAWA (1.Institute of Industrial Science, University of Tokyo)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-8-1] Platinum-Enhanced Oxidation of Silicon: Formation of MOS Structure below 300℃

H. Kobayashi、T. Yuasa、H. Kawa、Y. Nakato、K. Yoneda (1.PRESTO, Research Development Corporation of Japan、2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University、3.Kyoto Research Laboratory, Matsushita Electronics Corporation)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-8-2] Interface States for Ultrathin Chemical Oxide Layers on Si(111) and Si(100)

Y. Yamashita、Y. Nakato、Y. Nishioka、H. Kato、H. Kobayashi (1.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University、2.Texas Instruments Tsukuba Research and Development Center Ltd.、3.Photon Factory, National Laboratory for High Energy Physics、4.PRESTO, Research Development Corporation of Japan)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-8-3] Properties of a New Passivation SiNx Films Prepared by cat-CVD Method

Shinya Okada、Hideki Matsumura (1.JAIST (Japan Advanced Institute of Science and Technology))

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード