[D-1-2] Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs

Katsuhiko HIGUCHI、Hiroyuki UCHIYAMA、Takashi SHIOTA、Makoto KUDO、Tomoyoshi MISHIMA (1.Central Research Lab., Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-3] New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs

Tohru OKA、Kiyoshi OUCHI、Kazuhiro MOCHIZUKI、Tohru NAKAMURA (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-4] InGaP/GaAs Sub-Square-Micron Emitter HBT with fmax＞100 GHz

Koji HIRATA、Tomonori TANOUE、Hiroshi MASUDA、Hiroyuki UCHIYAMA、Akihisa TERANO (1.Hitachi ULSI Engineering, Corp.、2.Central Research Laboratory, Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-1] Photonic Sampling of Ultrafast Electronic Devices: Bridging the Measurement Gap

Jeremy ALLAM (1.Hitachi Cambridge Laboratory Cavendish Laboratory)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-2] Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices

Masashi ARAKAWA、Shigeru KISHIMOTO、Takashi MIZUTANI (1.Department of Quantum Engineering, Nagoya University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-3] The Change of Mo/GaAs Schottky Characteristics by the Forward Gate Current

Tomoyuki OHSHIMA、Ryoji SHIGEMASA、Tamotsu KIMURA (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-4] Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism

Teketomo SATO、Shouichi UNO、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Metal CVD Technology for ULSI Applications: The Aluminum Route

Andreas KNORR、Jonathan FALTERMEIER、Robert TALEVI、Heidi GUNDLACH、Kaushik Arun KUMAR、Gregory G. PETERSON、Alain E. KALOYEROS (1.New York State Center for Advanced Thin Film Technology and Department of Physics, the University at Albany-SUNY)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy

Nobuyoshi Awaya、Toshio Kobayashi (1.NTT LSI Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Gap-Filling of Cu Employing Self-Sustained Sputtering with ICP Ionization

Takanori ICHIKI、Toshiaki KIKUCHI、Atsushi SANO、Shoso SHINGUBARA、Yasuhiro HORIIKE (1.Department of Electrical & Electronics Engineering, Toyo University、2.Department of Electrical Engineering, Hiroshima University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

298件中(31 - 40)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
次へ »

▲