[C-4-3] Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

Tamotsu HASHIZUME、Shunsuke SHIOBARA、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-4] Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers

Shigeharu Matsushita、Daijiro Inoue、Kohji Matsumura、Minoru Sawada、Keiichi Yodoshi、Yasoo Harada (1.Microelectronics Research Center, SANYO Electric Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-5] Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)InP Surfaces Studied by UHV Scanning Tunneling Microscope

Yasuhiko ISHIKAWA、Takashi FUKUI、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-1] A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications

Yeong-Lin Lai、Edward Y. Chang、Chun-Yen Chang、T. H. Liu、S. P. Wang (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University、2.Institute of Materials Science and Engineering, National Chiao Tung University、3.National Nano Device Laboratories、4.Hexawave, Inc.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-2] Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors

Kiyoshi OUCHI、Tomoyoshi MISHIMA、Kazuhiro MOCHIZUKI、Tohru OKA、Tomonori TANOUE (1.Central Research Laboratory, Hitachi, Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-3] Noise Parameter Extraction of GaAs MESFET with Monte-Carlo Simulation

J. M. Baek、Y. S. Kwon、S. Hong (1.Opto-Electronics Research Center Department of Electrical Engineering Korea Advanced Institute of Science and Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-4] Deposition of Polyimide Films by Ionized Cluster Beam

K. W. KIM、N. Y. KIM、C. E. HONG、S. Y. KIM、C. N. WHANG (1.Dept. of physics, Yonsei University、2.Dept. of physics, Sunmoon University、3.Dept. of Physics, Soongsil University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-5] Organic-on-InP Heterostructure Diodes for Microwave Applications

Peter URBACH、Dirk AMMERMANN、Wolfgang KOWALSKY (1.Institut fur Hochfrequenztechnik, TU Braunschweig)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-6-6] Electrical Properties of Al/Al2O3/(Ba,Rb)BiO3/SrTiO3(Nb) Three Terminal Device

Fumihiko TODA、Tomoyuki YAMADA、Katsufumi HASHIMOTO、Hitoshi ABE (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PC-7-1] Analysis of Spot Shape Behavior on a Spot-Size Controllable Laser Diode

Shin'ichi Nakatsuka、Akira Arimoto、Susumu Saitoh (1.Central Research Labs., Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード